Patents by Inventor Hye Ran Choi

Hye Ran Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10577716
    Abstract: Disclosed herein is a multilayer nanocrystal structure comprising a nanocrystal alloy core comprising two or more nanocrystals and including an alloy interlayer formed at an interface between the two or more nanocrystals, and one or more layers of nanocrystal shells formed sequentially on the surface of the nanocrystal alloy core, wherein the nanocrystal shells each have different band gaps. The multilayer nanocrystal structure can be applied to various electronic devices owing to its advantages of high luminescence efficiency, superior optical stability, and superior chemical stability.
    Type: Grant
    Filed: March 26, 2018
    Date of Patent: March 3, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Eun Joo Jang, Shin Ae Jun, Jung Eun Lim, Hye Ran Choi
  • Publication number: 20180216250
    Abstract: Disclosed herein is a multilayer nanocrystal structure comprising a nanocrystal alloy core comprising two or more nanocrystals and including an alloy interlayer formed at an interface between the two or more nanocrystals, and one or more layers of nanocrystal shells formed sequentially on the surface of the nanocrystal alloy core, wherein the nanocrystal shells each have different band gaps. The multilayer nanocrystal structure can be applied to various electronic devices owing to its advantages of high luminescence efficiency, superior optical stability, and superior chemical stability.
    Type: Application
    Filed: March 26, 2018
    Publication date: August 2, 2018
    Inventors: Eun Joo JANG, Shin Ae JUN, Jung Eun LIM, Hye Ran CHOI
  • Patent number: 9926643
    Abstract: Disclosed herein is a multilayer nanocrystal structure comprising a nanocrystal alloy core comprising two or more nanocrystals and including an alloy interlayer formed at an interface between the two or more nanocrystals, and one or more layers of nanocrystal shells formed sequentially on the surface of the nanocrystal alloy core, wherein the nanocrystal shells each have different band gaps. The multilayer nanocrystal structure can be applied to various electronic devices owing to its advantages of high luminescence efficiency, superior optical stability, and superior chemical stability.
    Type: Grant
    Filed: October 31, 2012
    Date of Patent: March 27, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Eun Joo Jang, Shin Ae Jun, Jung Eun Lim, Hye Ran Choi
  • Patent number: 8309170
    Abstract: Disclosed herein is a multilayer nanocrystal structure comprising a nanocrystal alloy core comprising two or more nanocrystals and including an alloy interlayer formed at an interface between the two or more nanocrystals, and one or more layers of nanocrystal shells formed sequentially on the surface of the nanocrystal alloy core, wherein the nanocrystal shells each have different band gaps. The multilayer nanocrystal structure can be applied to various electronic devices owing to its advantages of high luminescence efficiency, superior optical stability, and superior chemical stability.
    Type: Grant
    Filed: September 4, 2007
    Date of Patent: November 13, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun Joo Jang, Shin Ae Jun, Jung Eun Lim, Hye Ran Choi
  • Patent number: 8252416
    Abstract: Disclosed herein is a nanocrystal-metal oxide complex. The nanocrystal of the nanocrystal-metal oxide complex is substituted with two or more different types of surfactants which are miscible with a metal oxide precursor and enable maintenance of luminescent and electrical properties of the nanocrystal. The nanocrystal-metal oxide complex exhibits superior optical and chemical stability and secures high luminescent efficiency of the nanocrystal. Accordingly, when the nanocrystal-metal oxide complex is used as a luminescent material of an electroluminescent device, it can improve luminescent efficiency and reliability of products. Further disclosed herein is a method for preparing the nanocrystal-metal oxide complex.
    Type: Grant
    Filed: October 31, 2007
    Date of Patent: August 28, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Shin Ae Jun, Eun Joo Jang, Hye Ran Choi, Jung Eun Lim
  • Publication number: 20080290936
    Abstract: Disclosed herein is a nanocrystal-metal oxide complex. The nanocrystal of the nanocrystal-metal oxide complex is substituted with two or more different types of surfactants which are miscible with a metal oxide precursor and enable maintenance of luminescent and electrical properties of the nanocrystal. The nanocrystal-metal oxide complex exhibits superior optical and chemical stability and secures high luminescent efficiency of the nanocrystal. Accordingly, when the nanocrystal-metal oxide complex is used as a luminescent material of an electroluminescent device, it can improve luminescent efficiency and reliability of products. Further disclosed herein is a method for preparing the nanocrystal-metal oxide complex.
    Type: Application
    Filed: October 31, 2007
    Publication date: November 27, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Shin Ae JUN, Eun Joo JANG, Hye Ran CHOI, Jung Eun LIM
  • Publication number: 20080252209
    Abstract: Disclosed herein is a multilayer nanocrystal structure comprising a nanocrystal alloy core comprising two or more nanocrystals and including an alloy interlayer formed at an interface between the two or more nanocrystals, and one or more layers of nanocrystal shells formed sequentially on the surface of the nanocrystal alloy core, wherein the nanocrystal shells each have different band gaps. The multilayer nanocrystal structure can be applied to various electronic devices owing to its advantages of high luminescence efficiency, superior optical stability, and superior chemical stability.
    Type: Application
    Filed: September 4, 2007
    Publication date: October 16, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Eun Joo JANG, Shin Ae JUN, Jung Eun LIM, Hye Ran CHOI
  • Publication number: 20080217689
    Abstract: Semiconductor devices are provided including gate patterns on a substrate and isolation regions on the substrate. Insulating patterns are provided in the substrate below the gate patterns. Source/drain regions are provided in the substrate. Related methods of fabricating semiconductor devices are also provided.
    Type: Application
    Filed: February 29, 2008
    Publication date: September 11, 2008
    Inventors: Yong-Hoon Son, Hye-Ran Choi, Jong-Wook Lee