Abstract: An image sensing device includes a unit pixel configured to have a shape with first, second, third and fourth vertices where the second vertex and the third vertex are positioned in a diagonal direction of the unit pixel, a floating diffusion region disposed adjacent to the first vertex of the unit pixel, a transfer gate abutting on the floating diffusion region, a source region disposed adjacent to the second vertex of the unit pixel, a drain region disposed adjacent to the third vertex of the unit pixel, and a pixel transistor gate positioned between the source region and the drain region.

Abstract: An image sensing device includes a pixel array configured to include a first pixel belonging to a first row and a first column, and a second pixel belonging to a second row adjacent to the first row and a second column adjacent to the first column; and a dual conversion gain (DCG) capacitor coupled between the first pixel and the second pixel, and a first DCG transistor for selectively connecting the DCG capacitor to or disconnecting the DCG capacitor from a first floating diffusion region of the first pixel; and the second pixel includes a second floating diffusion region and a second DCG transistor for selectively connecting the DCG capacitor to or disconnecting the DCG capacitor from a second floating diffusion region of the second pixel.

Abstract: An image sensor includes a first transfer gate formed over a substrate, and including a first projection; a second transfer gate formed over the substrate, neighboring the first transfer gate, and including a second projection; and a floating diffusion formed in the substrate, and partially overlapping with the first transfer gate and the second transfer gate, wherein the first projection and the second projection face each other.

Abstract: An image sensing device includes a pixel array configured to include a first pixel belonging to a first row and a first column, and a second pixel belonging to a second row adjacent to the first row and a second column adjacent to the first column; and a dual conversion gain (DCG) capacitor coupled between the first pixel and the second pixel, and a first DCG transistor for selectively connecting the DCG capacitor to or disconnecting the DCG capacitor from a first floating diffusion region of the first pixel; and the second pixel includes a second floating diffusion region and a second DCG transistor for selectively connecting the DCG capacitor to or disconnecting the DCG capacitor from a second floating diffusion region of the second pixel.

Abstract: An image sensor includes a first transfer gate formed over a substrate, and including a first projection; a second transfer gate formed over the substrate, neighboring the first transfer gate, and including a second projection; and a floating diffusion formed in the substrate, and partially overlapping with the first transfer gate and the second transfer gate, wherein the first projection and the second projection face each other.

Abstract: An image sensor includes one or more first unit pixels. Each of the one or more first unit pixels may include a first photoelectric conversion region including first photoelectric conversion elements arranged in the form of a matrix, and a first floating diffusion region at a center of the first photoelectric conversion elements; a first transistor region including a first active region in which a first reset gate, a first select gate and a first drive gate are disposed; a first signal interconnect electrically connecting the first floating diffusion region to the first drive gate; and a first shielding interconnect separated from the first signal interconnect and extending parallel to the first signal interconnect.

Abstract: An image sensor includes a first transfer gate formed over a substrate, and including a first projection; a second transfer gate formed over the substrate, neighboring the first transfer gate, and including a second projection; and a floating diffusion formed in the substrate, and partially overlapping with the first transfer gate and the second transfer gate, wherein the first projection and the second projection face each other.

Abstract: An image sensor includes a first transfer gate formed over a substrate, and including a first projection; a second transfer gate formed over the substrate, neighboring the first transfer gate, and including a second projection; and a floating diffusion formed in the substrate, and partially overlapping with the first transfer gate and the second transfer gate, wherein the first projection and the second projection face each other.

Abstract: An image sensor includes one or more first unit pixels. Each of the one or more first unit pixels may include a first photoelectric conversion region including first photoelectric conversion elements arranged in the form of a matrix, and a first floating diffusion region at a center of the first photoelectric conversion elements; a first transistor region including a first active region in which a first reset gate, a first select gate and a first drive gate are disposed; a first signal interconnect electrically connecting the first floating diffusion region to the first drive gate; and a first shielding interconnect separated from the first signal interconnect and extending parallel to the first signal interconnect.

Abstract: An image sensor includes a first transfer gate formed over a substrate, and including a first projection; a second transfer gate formed over the substrate, neighboring the first transfer gate, and including a second projection; and a floating diffusion formed in the substrate, and partially overlapping with the first transfer gate and the second transfer gate, wherein the first projection and the second projection face each other.

Abstract: An image sensor includes a pixel array including a plurality of pixel blocks, each including a light receiving section including unit pixels which share a floating diffusion; a first driving section disposed at one side of the light receiving section and including a reset transistor; and a second driving section disposed adjacent to the first driving section and including a driver transistor, wherein the pixel blocks include a first pixel block and a second pixel block which is adjacent to the first pixel block, and, with respect to a boundary where the first pixel block and the second pixel adjoin each other, the first driving section of the first pixel block has a shape symmetrical to the first driving section of the second pixel block and the second driving section of the first pixel block has a shape asymmetrical to the second driving section of the second pixel block.

Abstract: An image sensor includes a pixel array including a plurality of pixel blocks, each including a light receiving section including unit pixels which share a floating diffusion; a first driving section disposed at one side of the light receiving section and including a reset transistor; and a second driving section disposed adjacent to the first driving section and including a driver transistor, wherein the pixel blocks include a first pixel block and a second pixel block which is adjacent to the first pixel block, and, with respect to a boundary where the first pixel block and the second pixel adjoin each other, the first driving section of the first pixel block has a shape symmetrical to the first driving section of the second pixel block and the second driving section of the first pixel block has a shape asymmetrical to the second driving section of the second pixel block.