Patents by Inventor Hye-Won Mun

Hye-Won Mun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210020676
    Abstract: An image sensor includes a first transfer gate formed over a substrate, and including a first projection; a second transfer gate formed over the substrate, neighboring the first transfer gate, and including a second projection; and a floating diffusion formed in the substrate, and partially overlapping with the first transfer gate and the second transfer gate, wherein the first projection and the second projection face each other.
    Type: Application
    Filed: October 6, 2020
    Publication date: January 21, 2021
    Inventors: Sung-Kun Park, Hye-Won Mun
  • Patent number: 10833112
    Abstract: An image sensor includes a first transfer gate formed over a substrate, and including a first projection; a second transfer gate formed over the substrate, neighboring the first transfer gate, and including a second projection; and a floating diffusion formed in the substrate, and partially overlapping with the first transfer gate and the second transfer gate, wherein the first projection and the second projection face each other.
    Type: Grant
    Filed: October 1, 2018
    Date of Patent: November 10, 2020
    Assignee: SK hynix Inc.
    Inventors: Sung-Kun Park, Hye-Won Mun
  • Publication number: 20200321382
    Abstract: An image sensor includes one or more first unit pixels. Each of the one or more first unit pixels may include a first photoelectric conversion region including first photoelectric conversion elements arranged in the form of a matrix, and a first floating diffusion region at a center of the first photoelectric conversion elements; a first transistor region including a first active region in which a first reset gate, a first select gate and a first drive gate are disposed; a first signal interconnect electrically connecting the first floating diffusion region to the first drive gate; and a first shielding interconnect separated from the first signal interconnect and extending parallel to the first signal interconnect.
    Type: Application
    Filed: October 24, 2019
    Publication date: October 8, 2020
    Inventors: Jong-Hwan Shin, Hye-Won Mun, Hoon-Sang Oh
  • Publication number: 20190165018
    Abstract: An image sensor includes a first transfer gate formed over a substrate, and including a first projection; a second transfer gate formed over the substrate, neighboring the first transfer gate, and including a second projection; and a floating diffusion formed in the substrate, and partially overlapping with the first transfer gate and the second transfer gate, wherein the first projection and the second projection face each other.
    Type: Application
    Filed: October 1, 2018
    Publication date: May 30, 2019
    Inventors: Sung-Kun Park, Hye-Won Mun
  • Patent number: 10218927
    Abstract: An image sensor includes a pixel array including a plurality of pixel blocks, each including a light receiving section including unit pixels which share a floating diffusion; a first driving section disposed at one side of the light receiving section and including a reset transistor; and a second driving section disposed adjacent to the first driving section and including a driver transistor, wherein the pixel blocks include a first pixel block and a second pixel block which is adjacent to the first pixel block, and, with respect to a boundary where the first pixel block and the second pixel adjoin each other, the first driving section of the first pixel block has a shape symmetrical to the first driving section of the second pixel block and the second driving section of the first pixel block has a shape asymmetrical to the second driving section of the second pixel block.
    Type: Grant
    Filed: January 23, 2018
    Date of Patent: February 26, 2019
    Assignee: SK hynix Inc.
    Inventors: Pyong-Su Kwag, Hye-Won Mun
  • Publication number: 20190007633
    Abstract: An image sensor includes a pixel array including a plurality of pixel blocks, each including a light receiving section including unit pixels which share a floating diffusion; a first driving section disposed at one side of the light receiving section and including a reset transistor; and a second driving section disposed adjacent to the first driving section and including a driver transistor, wherein the pixel blocks include a first pixel block and a second pixel block which is adjacent to the first pixel block, and, with respect to a boundary where the first pixel block and the second pixel adjoin each other, the first driving section of the first pixel block has a shape symmetrical to the first driving section of the second pixel block and the second driving section of the first pixel block has a shape asymmetrical to the second driving section of the second pixel block.
    Type: Application
    Filed: January 23, 2018
    Publication date: January 3, 2019
    Inventors: Pyong-Su Kwag, Hye-Won Mun