Abstract: The present invention relates to a method of generating a word embedding library, including: receiving, by a processor, original text composed of Hangul through an input interface; segmenting, by the processor, the original text by morpheme, combining segmented morphemes step by step according to a preset rule, and matching a tag to a combination of step-by-step morphemes according to a morphological attribute or a syntactic attribute of the combination of step-by-step morphemes; and generating, by the processor, a word embedding library by classifying the morphemes included in the original text based on the tag matched to the combination of step-by-step morphemes.

Abstract: A clock switch device includes a control circuit and a tri-state buffer. The control circuit deactivates an output enable signal when a frequency of a clock signal varies and activates the output enable signal when the frequency of the clock signal is maintained without change. The tri-state buffer maintains an output electrode at a high impedance state when the output enable signal is deactivated and buffers the clock signal and outputs the buffered clock signal through the output electrode as an output clock signal when the output enable signal is activated.

Abstract: A method for predicting a failure rate of a semiconductor integrated circuit includes receiving a circuit netlist corresponding to circuit defining data, which defines a connection relation, input, output, size, type and operating temperature of each transistor of a plurality of transistors included in the semiconductor integrated circuit. Low-risk transistors having a low-failure probability among the plurality of transistors are detected and filtered out based on the circuit netlist. Failure rates are calculated of respective high-risk transistors other than the low-risk transistors among the plurality of transistors. A total failure rate of the semiconductor integrated circuit is calculated based on the failure rates of the respective high-risk transistors.

Abstract: A clock switch device includes a control circuit and a tri-state buffer. The control circuit deactivates an output enable signal when a frequency of a clock signal varies and activates the output enable signal when the frequency of the clock signal is maintained without change. The tri-state buffer maintains an output electrode at a high impedance state when the output enable signal is deactivated and buffers the clock signal and outputs the buffered clock signal through the output electrode as an output clock signal when the output enable signal is activated.

Abstract: A method for predicting a failure rate of a semiconductor integrated circuit includes receiving a circuit netlist corresponding to circuit defining data, which defines a connection relation, input, output, size, type and operating temperature of each of a plurality of transistors included in the semiconductor integrated circuit. Low-risk transistors having a low-failure probability among the plurality of transistors are detected and filtered out based on the circuit netlist. Failure rates are calculated of respective high-risk transistors other than the low-risk transistors among the plurality of transistors. A total failure rate of the semiconductor integrated circuit is calculated based on the failure rates of the respective high-risk transistors.

Abstract: An electrical fuse includes first and second active regions doped with respective first-type and second-type impurities that form a horizontal P/N junction, first and second spaced apart silicide layers on respective portions of the top surfaces of the first and second active regions, and first and second contacts on the respective top surfaces of the first and second silicide layers. When a first reverse voltage that is higher than a threshold voltage is applied to the electrical fuse through the first and second contacts, the P/N junction is broken down by a reverse current flowing between the first and second active regions so that the electrical fuse is rendered conductive in response to a second reverse voltage that is less than the threshold voltage.