Abstract: An image sensor that includes a substrate including a photoelectric conversion region, a semiconductor pattern on the substrate, a gate electrode on the semiconductor pattern, and a gate insulating layer between the semiconductor pattern and the gate electrode. The semiconductor pattern includes a first sub pattern including a first source/drain region, a second sub pattern including a second source/drain region, and a third sub pattern between the first sub pattern and the second sub pattern. The gate electrode is on the third sub pattern. The first sub pattern, the second sub pattern, and the third sub pattern extend along different directions.

Abstract: A method of manufacturing a silicon single crystal includes preparing a silicon melt and growing the silicon single crystal based on co-doping boron and phosphorus into the silicon melt. The growing of the silicon single crystal includes controlling, a doping concentration ratio, which is a ratio of an initial concentration of phosphorus to an initial concentration of boron, to be a particular ratio and controlling the initial concentration of boron to be within a range of about 8.0E12 atom/cm3 to about 1.5E13 atom/cm3.

Abstract: An organic compound, an organic photoelectric device, an image sensor, and an electronic device, the organic compound being represented by Chemical Formula 1: wherein, in Chemical Formula 1, R1, R2, R3, R4, R5, and R6 are each independently a hydrogen atom, a substituted or unsubstituted C1-C4 alkyl group, a substituted or unsubstituted C1-C4 alkoxy group, or a substituted or unsubstituted C1-C4 alkylthio group, and A is a functional group including a heteroaryl group that includes at least one sulfur atom.

Abstract: An image sensor includes a substrate having a first surface and a second surface opposite to each other, a first floating diffusion region provided in the substrate and being adjacent to the first surface, a through-electrode provided in the substrate and electrically connected to the first floating diffusion region, an insulating structure, a bottom electrode, a photoelectric conversion layer, and a top electrode sequentially stacked on the second surface, a color filter buried in the insulating structure, and a top contact plug penetrating the insulating structure to connect the bottom electrode to the through-electrode.

Abstract: An image sensor includes a substrate having a first surface and a second surface opposite to each other, a first floating diffusion region provided in the substrate and being adjacent to the first surface, a through-electrode provided in the substrate and electrically connected to the first floating diffusion region, an insulating structure, a bottom electrode, a photoelectric conversion layer, and a top electrode sequentially stacked on the second surface, a color filter buried in the insulating structure, and a top contact plug penetrating the insulating structure to connect the bottom electrode to the through-electrode.

Abstract: An image sensor includes a substrate having a first surface and a second surface opposite to each other, a first floating diffusion region provided in the substrate and being adjacent to the first surface, a through-electrode provided in the substrate and electrically connected to the first floating diffusion region, an insulating structure, a bottom electrode, a photoelectric conversion layer, and a top electrode sequentially stacked on the second surface, a color filter buried in the insulating structure, and a top contact plug penetrating the insulating structure to connect the bottom electrode to the through-electrode.

Abstract: An organic compound, an organic photoelectric device, an image sensor, and an electronic device, the organic compound being represented by Chemical Formula 1: wherein, in Chemical Formula 1, R1, R2, R3, R4, R5, and R6 are each independently a hydrogen atom, a substituted or unsubstituted C1-C4 alkyl group, a substituted or unsubstituted C1-C4 alkoxy group, or a substituted or unsubstituted C1-C4 alkylthio group, and A is a functional group including a heteroaryl group that includes at least one sulfur atom.

Abstract: An image sensor includes a substrate having a first surface and a second surface opposite to each other, a first floating diffusion region provided in the substrate and being adjacent to the first surface, a through-electrode provided in the substrate and electrically connected to the first floating diffusion region, an insulating structure, a bottom electrode, a photoelectric conversion layer, and a top electrode sequentially stacked on the second surface, a color filter buried in the insulating structure, and a top contact plug penetrating the insulating structure to connect the bottom electrode to the through-electrode.