Patents by Inventor Hyeji SIM

Hyeji SIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electronic device including heterogeneous singlecrystal transition metal oxide layer disposed on substrate, and method for manufacturing the same
    Patent number: 12453131
    Abstract: Provided is an electronic device including a semiconductor substrate, a single-crystal first transition metal oxide layer on the semiconductor substrate, and a single-crystal second transition metal oxide layer spaced apart from the semiconductor substrate with the single-crystal first transition metal oxide layer interposed therebetween. The first transition metal oxide layer and the second transition metal oxide layer are in contact with each other. The semiconductor substrate, the first transition metal oxide layer, and the second transition metal oxide layer include different materials from each other. The first transition metal oxide layer and the second transition metal oxide layer have the same crystal direction.
    Type: Grant
    Filed: June 21, 2022
    Date of Patent: October 21, 2025
    Assignee: POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION
    Inventors: Junwoo Son, Yunkyu Park, DongKyu Lee, Si-Young Choi, Hyeji Sim
  • ELECTRONIC DEVICE INCLUDING HETEROGENEOUS SINGLECRYSTAL TRANSITION METAL OXIDE LAYER DISPOSED ON SUBSTRATE, AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20220416083
    Abstract: Provided is an electronic device including a semiconductor substrate, a single-crystal first transition metal oxide layer on the semiconductor substrate, and a single-crystal second transition metal oxide layer spaced apart from the semiconductor substrate with the single-crystal first transition metal oxide layer interposed therebetween. The first transition metal oxide layer and the second transition metal oxide layer are in contact with each other. The semiconductor substrate, the first transition metal oxide layer, and the second transition metal oxide layer include different materials from each other. The first transition metal oxide layer and the second transition metal oxide layer have the same crystal direction.
    Type: Application
    Filed: June 21, 2022
    Publication date: December 29, 2022
    Inventors: Junwoo SON, Yunkyu PARK, DongKyu LEE, Si-Young CHOI, Hyeji SIM