Abstract: Provided is a polycarbonate resin having a relaxation time of 2 seconds to 15 seconds at 250° C. and a residual phenol content of 3,000 ppm or less.

Abstract: Provided is a polycarbonate resin having a high shear viscosity of 10 Pa·s to 260 Pa·s at 250° C.

Abstract: Provided are a polycarbonate resin including a unit of Chemical Formula 1, a method for preparing the same, a polycarbonate resin composition including the same, and a molded article including the polycarbonate resin composition, where all the variables are described herein.

Abstract: A polycarbonate resin including a unit of Chemical Formula 1, a method for preparing the same, a polycarbonate resin composition including the same, and a molded article including the polycarbonate resin composition are disclosed herein. In some embodiments, a polycarbonate resin including a unit of Chemical Formula 1: Ar1 and Ar2 are each independently an aryl group, or a heteroaryl group, R1 is hydrogen, deuterium, a halogen group, a cyano group, an alkyl group, a cycloalkyl group, an alkoxy group, a silyl group, an aryl group, or a heteroaryl group, r1 is 1 or 2, X1 to X4 are each independently O or S, Z1 and Z2 are each independently an alkylene group, or a cycloalkylene group, and a and b are each independently an integer from 1 to 10.

Abstract: A polycarbonate resin including a unit of Chemical Formula 1 and a unit of Chemical Formula 2, a method for preparing the same, a polycarbonate resin composition including the same, and a molded article are disclosed herein: Ar1 and Ar2 are independently an aryl group, or a heteroaryl group, R1 is hydrogen, deuterium, a halogen group, a cyano group, an alkyl group, a cycloalkyl group, an alkoxy group, a silyl group, an aryl group, or a heteroaryl group, R2 and R3 are different from each other, r1 is 1 or 2, r2 and r3 are each an integer from 1 to 4, L1 and L2 are independently an arylene group, X1 to X8 are independently O or S, Z1 to Z4 are independently an alkylene group, or a cycloalkylene group, and a, b, c and d are independently an integer from 1 to 10.

Abstract: A resin including a unit of Chemical Formula 1, a method for preparing the same, a resin composition including the same, and a molded article including the resin composition are described: wherein all the variables are described herein.

Abstract: A polycarbonate resin including a unit of Chemical Formula 1, a method for preparing the same, a polycarbonate resin composition including the same, and a molded article including the polycarbonate resin composition are described: wherein all the variables are described herein.

Abstract: A resin including a unit represented by Chemical Formula 1, a method for preparing the same, a resin composition including the same, and a molded article including the resin composition is described: wherein all the variables are described herein.

Abstract: A resin, a method for preparing the same, a resin composition including the same, and a molded article including the resin composition are disclosed in herein. In some embodiments, a resin includes a unit of Chemical Formula 1 and a unit of Chemical Formula 2: wherein, in Chemical Formulae 1 and 2, Ar1, Ar2, R1, r1, X1 to X4, X9, X10, Z1, Z2, Z5, La, La?, a, b, p, t, m, n, L11, l11, X11 to X16, Z11 to Z13, Lb, Lb?, a?, b?, p?, C?, m? and n? are defined herein.

Abstract: A resin, a method for preparing the same, a resin composition including the same, and a molded article including the resin composition are disclosed herein. In some embodiments, the resin includes a unit of Chemical Formula 1 and a unit of Chemical Formula 2 wherein, in Chemical Formulae 1 and 2, Ar1, Ar2, R1 to R3, r1 to r3, L1, L2, X1 to X10, X?9, X?10, Z1 to Z6, La, La?, La?, La??, a, b, c, d, p, q, t, t?, m, n, m? and n? are defined herein.

Abstract: A resin includes a unit represented by Chemical Formula 1, a method for preparing the same, a resin composition including the same, and a molded article including the resin composition in Chemical Formula 1, Ar1, Ar2, R1, r1, X1 to X4, Z1, Z2, a and b are described herein.

Abstract: A nonvolatile memory device includes multiple memory cells including first memory cells and second memory cells. A method of programming the nonvolatile memory device includes: performing first programming to apply a programming forcing voltage to a bit line of each of the first memory cells; and dividing the second memory cells into a first cell group, a second cell group, and a third cell group, based on a threshold voltage of the second memory cells after performing the first programming. The method also includes performing second programming to apply a programming inhibition voltage to the bit line of each of the first memory cells and a bit line of each of memory cells of the first cell group. A level of the programming forcing voltage is lower than that of the programming inhibition voltage.

Abstract: A method is provided for operating a memory device. The method includes counting, from among memory cells, a number of first off-cells with respect to a first reading voltage and a number of second off-cells with respect to a second reading voltage, comparing the number of first off-cells and the number of second off-cells, and determining, based on a result of the comparing, whether a programming error exists in a storage region in which the memory cells are included.