Abstract: Provided is a method of manufacturing silicon nanotubes including forming non-catalytic metal islands on a substrate; forming catalyst metal doughnuts to surround the non-catalytic metal islands; and growing silicon nanotubes on the catalyst metal doughnuts. The silicon nanotubes are efficiently grown using the catalyst metal doughnuts.

Abstract: Provided is an image sensor and a method of manufacturing the image sensor which can remove a dead zone and increase light collection efficiency. The sensor thereof includes a substrate that includes a plurality of pixel areas disposed in a matrix form, a plurality of photoelectric conversion devices formed at the pixel areas, a plurality of optical waveguide layers formed on the plurality of photoelectric conversion devices, a color filter layer formed on the plurality of optical waveguide layers, and upper and lower microlenses formed on and under the color filter layer, respectively. The upper and lower microlenses are arranged by alternating in longitudinal and transverse directions of the pixel area on the plurality of optical waveguide layers.

Abstract: A system for processing visual information and a method thereof. Exemplary embodiments provides to a terminal event information searched through space recognition by a processing server for long-term storing image information input through the terminal so as to match and output event information with the input image information and recognize events that are an object of interest in the input image information or the long-term stored the image information and provide the related information so as to learn interest characteristics of a user and store the interest characteristics in the database, thereby providing user-based information. In addition, the exemplary embodiments of the present invention long-term stores the visual information by processing the visual information through the processing server so as to be used as a black box and can be used for applications requiring various artificial intelligence functions such as a disabled sensory supporting system, a robot, or the like.

Abstract: A gas sensor includes zinc oxide nano-structures formed on a substrate, a plurality of metal islands coated on a surface of each zinc oxide nano-structure and separated from one another, a first electrode electrically connected to one end of each zinc oxide nano-structure through the substrate, a second electrode electrically connected to the other end of each zinc oxide nano-structure, and a current variation-measuring unit electrically connected to each of the first electrode and the second electrode so as to measure a variation in the amount of current flowing between the first electrode and the second electrode. In order to form the plurality of metal islands on the zinc oxide nano-structures, a solution of metal components of a metal material is coated on the surface of each zinc oxide nano-structure.

Abstract: Provided is a method of manufacturing silicon nanowires including: forming a silicon nanodot thin film having a plurality of silicon nanodots exposed on a substrate; and growing the silicon nanowires on the silicon nanodot thin film using the silicon nanodots as a nucleation site. The silicon nanowires can be manufactured using the silicon nanodot thin film disposed in a silicon nitride matrix, as a nucleation site instead of using catalytic metal islands, wherein the silicon nanodot thin film includes the silicon nanodots.

Abstract: Provided is CNTs on which TiO2 is uniformly coated. The method includes: functionalizing CNTs with hydrophilic functional groups; mixing the CNTs functionalized with hydrophilic functional groups in a solution that contains with TiO2 precursors; refining TiO2 precursor-coated CNTs from the solution in which the CNTs and the TiO2 precursors are mixed; and heat treating the refined TiO2-coated CNTs. The TiO2-coated CNTs formed in this manner simultaneously retain the characteristics of CNTs and TiO2 nanowires, and thus, can be applied to solar cells, field emission display devices, gas sensors, or optical catalysts.

Abstract: Provided is an apparatus and method for automatically controlling a wiper of a vehicle, the apparatus including a light emitting means to output one or more optical signals to an inside of a front glass of the vehicle, a light receiving means to receive the optical signals output from the light emitting means, and a control means to control the wiper of the vehicle to be driven based on a light receiving efficiency with respect to received signals received by the light receiving means, when operating in an automatic wiper control mode. Since driving of the wiper is automatically controlled based on the light receiving efficiency of optical signals output to the inside of the front glass, it is possible to secure a visual field of a driver without a need to separately manipulate manually a wiper controller.

Abstract: Provided is a nano structure composite and a method of manufacturing the same. More specifically, a nano structure composite that includes a substrate, a first layer formed of carbon nano structures on the substrate, and a second layer formed of metal oxide nano structures on the first layer, and a method of manufacturing the same are provided. When the nano structure composite according to the present invention is used, a device having a field emission characteristic higher efficiency than a conventional device can be realized, and also, the device can be manufactured at a lower temperature and at a lower pressure. Thus, manufacturing cost can be reduced and a large scale process can be performed.

Abstract: Provided is a method of manufacturing oxide-based nano-structured materials using a chemical wet process, and thus, the method can be employed to manufacture oxide-based nano-structured materials having uniform composition and good electrical characteristics in large quantities, the method having a relatively simple process which does not use large growing equipment. The method includes preparing a first organic solution that comprises a metal, mixing the first organic solution with a second organic solution that contains hydroxyl radicals (—OH), filtering the mixed solution using a filter in order to extract oxide-based nano-structured materials formed in the mixed solution, drying the extracted oxide-based nano-structured materials to remove any remaining organic solution, and heat treating the dried oxide-based nano-structured materials.

Abstract: Provided are a gas sensor using a plurality of zinc oxide nano-structures on which metal islands are formed, and a method of fabricating the same. The gas sensor comprises zinc oxide nano-structures formed on a substrate, a plurality of metal islands coated on a surface of each zinc oxide nano-structure and separated from one another, a first electrode electrically connected to one end of each zinc oxide nano-structure through the substrate, a second electrode electrically connected to the other end of each zinc oxide nano-structure, and a current variation-measuring unit electrically connected to each of the first electrode and the second electrode so as to measure a variation in the amount of current flowing between the first electrode and the second electrode.

Abstract: Provided is a method of manufacturing silicon nanowires including: forming a silicon nanodot thin film having a plurality of silicon nanodots exposed on a substrate; and growing the silicon nanowires on the silicon nanodot thin film using the silicon nanodots as a nucleation site. The silicon nanowires can be manufactured using the silicon nanodot thin film disposed in a silicon nitride matrix, as a nucleation site instead of using catalytic metal islands, wherein the silicon nanodot thin film includes the silicon nanodots.

Abstract: Provided is a method of forming an oxide-based nano-structured material including growing a nano-structured material using a nano-nucleus having the same composition as the desired oxide-based nano-structured material. A solution is coated on a substrate, the solution including: an organic precursor containing M which is a transition metal or a semi metal; and an organic solvent in which the organic precursor is dissolved. A nano-nucleus having a composition of MxOy is formed on the substrate by annealing the substrate. A nano-structured material having a composition of MxOy is formed by growing the nano-nucleus while supplying a reaction precursor containing M into the nano-nucleus, and the nano-structured material is annealed.

Abstract: A method of forming a sensor for detecting gases and biochemical materials that can be fabricated at a temperature in a range from room temperature to 400° C., a metal oxide semiconductor field effect transistor (MOSFET)-based integrated circuit including the sensor, and a method of manufacturing the integrated circuit are provided. The integrated circuit includes a semiconductor substrate. The sensor for detecting gases and biochemical materials includes a pair of electrodes formed on a first region of the semiconductor substrate, and a metal oxide nano structure layer formed on surfaces of the pair electrodes. A heater is formed to perform thermal treatment to re-use the material detected in the metal oxide nano structure layer. Also, a signal processor is formed by a MOSFET to process a predetermined signal obtained from a quantity change of a current flowing through the pair of electrodes of the sensor.

Abstract: Provided are a structure for an optical device and method of fabricating the same. The structure includes: a light scattering layer producing nanoparticles due to externally provided thermal energy; a protective layer protecting the light scattering layer; and a capping layer disposed between the light scattering layer and the protective layer. As the light scattering layer is formed of nitride-oxide, an energy gap is increased to make the structure suitable for a high-speed electronic circuit, and a desired stoichiometric ratio can be easily obtained. Also, the capping layer prevents crystalline mismatch, thus the non-uniformity of elements is inhibited to maintain a stoichiometric state. As a result, a high-integrated high-speed electronic circuit, which is excellent in uniformity and reproducibility, can be easily embodied.

Abstract: Provided is a microelectromechanical system (MEMS) actuator in which a cantilever piezoelectric actuator and a comb actuator are combined to perform dual shaft drive. The MEMS includes: a stationary comb fixed on a substrate; a movable comb disposed separately from the substrate; and a spring connected to the movable comb and the substrate to resiliently support the movable comb, wherein the movable comb includes a piezoelectric material layer in a laminated manner to be perpendicularly moved by a piezoelectric phenomenon and laterally moved by an electrostatic force to the stationary comb, whereby the MEMS actuator can be used in a driving apparatus of an ultra-slim optical disk drive since the movable comb is made of a piezoelectric material to simultaneously perform focusing actuation to a Z-axis as well as planar actuation.

Abstract: The present invention utilizes magnesium diboride (MgB2) or (Mg1-xMx)B2 as a superconductivity thin film which can be applied to a rapid single flux quantum (RSFQ) circuit. A method for manufacturing a superconductor incorporating therein a superconductivity thin film, begins with preparing a single crystal substrate. Thereafter, a template film is formed on top of the substrate, wherein the template has a hexagonal crystal structure. The superconductivity thin film of MgB2 or (Mg1-xMx)B2 is formed on top of the template film. If Mg amount in the superconductivity thin film is insufficient, Mg vapor is flowed on the surface of the superconductivity thin film while a post annealing process is carried out at the temperature ranging from 400° C. to 900° C.

Abstract: There is provided a light-emitting device that increases an emissivity in a light emission layer so as to improve luminous efficiency. The light-emitting device includes a cover layer formed by depositing a material having a high refractive index that is higher than that of the light emission layer. The light-emitting device increases a ratio of the light reflected internally into the light-emitting device to increase a light absorption in the light emission layer, thereby enhancing emissivity in the light emission layer. Therefore, the light-emitting device can enhance the efficiency of it, even when the light emission layer is made of a conventional material, and can satisfy the commercial requirement for a display that is very bright.

Abstract: The present invention utilizes magnesium diboride (MgB2) or (Mg1−xMx)B2 as a superconductivity thin film which can be applied to a rapid single flux quantum (RSFQ) circuit. A method for manufacturing a superconductor incorporating therein a superconductivity thin film, begins with preparing a single crystal substrate. Thereafter, a template film is formed on top of the substrate, wherein the template has a hexagonal crystal structure. The superconductivity thin film of MgB2 or (Mg1−xMx)B2 is formed on top of the template film. If Mg amount in the superconductivity thin film is insufficient, Mg vapor is flowed on the surface of the superconductivity thin film while a post annealing process is carried out at the temperature ranging from 400° C. to 900° C.

Abstract: The present invention utilizes magnesium diboride (MgB2) or (Mg1−xMx)B2 as a superconductivity thin film which can be applied to a rapid single flux quantum (RSFQ) circuit. A method for manufacturing a superconductor incorporating therein a superconductivity thin film, begins with preparing a single crystal substrate. Thereafter, a template film is formed on top of the substrate, wherein the template has a hexagonal crystal structure. The superconductivity thin film of MgB2 or (Mg1−xMx)B2 is formed on top of the template film. If Mg amount in the superconductivity thin film is insufficient, Mg vapor is flowed on the surface of the superconductivity thin film while a post annealing process is carried out at the temperature ranging from 400° C. to 900° C.

Abstract: The present invention utilizes magnesium diboride (MgB2) or (Mg1−xMx)B2 as a superconductivity thin film which can be applied to a rapid single flux quantum (RSFQ) circuit. A method for manufacturing a superconductor incorporating therein a superconductivity thin film, begins with preparing a single crystal substrate. Thereafter, a template film is formed on top of the substrate, wherein the template has a hexagonal crystal structure. The superconductivity thin film of MgB2 or (Mg1−xMx)B2 is formed on top of the template film. If Mg amount in the superconductivity thin film is insufficient, Mg vapor is flowed on the surface of the superconductivity thin film while a post annealing process is carried out at the temperature ranging from 400° C. to 900° C.