Abstract: The present invention relates to a process chamber and to a substrate processing device. The process chamber according to one embodiment of the present invention includes: a boat in which a plurality of substrates are vertically stacked apart from each; a chamber housing which raises the boat in order to position the boat in an inner space and horizontally injects a process gas from the sidewall and causes the process gas to flow between the substrates which are stacked apart from each other so as to discharge the process gas; a boat elevation unit which elevates the boat into the chamber housing; and a substrate transfer gate at which one side wall of the chamber housing is penetrated.

Abstract: The present invention relates to a process chamber which includes a substrate heating device. The substrate heating device of the process chamber according to one embodiment of the present invention has a boat in which a plurality of substrates are stacked apart from each other, and a chamber housing in which the boat is positioned in an inner space for process gas to flow between the substrates which are stacked apart from each other on the inner side wall, and the present invention includes a first heating body which generates heat in the lower portion of the boat to heat the substrate. Moreover, the boat comprises an upper plate, a lower plate, a plurality of support bars connecting the upper plate with the lower plate, and a plurality of substrate seat grooves formed on the side walls of the support bars.

Abstract: A cap for a vertical furnace includes a first flat plate and a second flat plate separated by a predetermined distance, and a plurality of support rods connecting the first and second flat plates. A plurality of adjacent and horizontally disposed adiabatic plates are vertically stacked between the first and the second flat plates such that edges of the adiabatic plates contact the support rods. The first and second flat plates, adjacent adiabatic plates, and the plurality of support rods are integrally formed in a single structure. Since all the components of the cap are formed in single structure, installation and replacement is simplified and the generation of contamination particles is prevented since no parts need to be repeatedly assembled and disassembled.

Abstract: A chemical vapor deposition (CVD) apparatus having a heat radiation structure. The CVD apparatus has a process chamber wherein the semiconductor substrate is located, a gas inlet for introducing a process gas into the process chamber, a manifold for supporting the process chamber and the gas inlet, and a heat radiating member provided around the gas inlet, for radiating heat transmitted from the manifold. The gas inlet has a plurality of radiation plates formed around the gas inlet and a plurality of through-holes formed in each of the radiation plates. With the gas inlet having the heat radiating structure, heat from the manifold during the deposition process is not transmitted to the gas supply line and the like. Thus the associated parts are not corroded or deformed.