Patents by Inventor Hyeokjin Jang

Hyeokjin Jang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8398783
    Abstract: A workpiece de-chucking device of a plasma reactor for dry-cleaning the inside of a reaction chamber and an ElectroStatic chuck (ESC) during workpiece de-chucking and a workpiece de-chucking method using the same are provided. The workpiece de-chucking device includes a lifting unit, an ICP source power unit, and a controller. The lifting unit lifts a workpiece mounted on a top surface of an ESC. The ICP source power unit forms a magnetic field in an inductive coil arranged outside a dielectric window. The controller outputs a source power control signal, a lift control signal, and a de-chucking control signal.
    Type: Grant
    Filed: August 11, 2010
    Date of Patent: March 19, 2013
    Assignee: DMS Co., Ltd.
    Inventors: Byoungil Lee, Hyeokjin Jang, Sungyong Ko, Minshik Kim
  • Patent number: 8323522
    Abstract: A plasma reactor and an etching method using the same are provided. The method includes a first changing step of changing the number or arrangement structure of inductive coils connecting to an RF source power supply unit, a step of applying RF source power and generating high density plasma, a first etching step of etching a first etch-target layer of a workpiece, a first stopping step of stopping applying the RF source power, a second changing step of changing the number or arrangement structure of the inductive coils, a step of applying RF source power to corresponding inductive coils and generating low density plasma, a second etching step of etching a second etch-target layer of the workpiece, and a second stopping step of stopping applying the RF source power.
    Type: Grant
    Filed: November 18, 2010
    Date of Patent: December 4, 2012
    Assignee: DMS Co., Ltd.
    Inventors: Hyeokjin Jang, Minshik Kim, Kwangmin Lee, Sungyong Ko, Hwankook Chae, Kunjoo Park, Keehyun Kim, Weonmook Lee
  • Publication number: 20110155694
    Abstract: A plasma reactor and an etching method using the same are provided. The method includes a first changing step of changing the number or arrangement structure of inductive coils connecting to an RF source power supply unit, a step of applying RF source power and generating high density plasma, a first etching step of etching a first etch-target layer of a workpiece, a first stopping step of stopping applying the RF source power, a second changing step of changing the number or arrangement structure of the inductive coils, a step of applying RF source power to corresponding inductive coils and generating low density plasma, a second etching step of etching a second etch-target layer of the workpiece, and a second stopping step of stopping applying the RF source power.
    Type: Application
    Filed: November 18, 2010
    Publication date: June 30, 2011
    Inventors: Hyeokjin JANG, Minshik KIM, Kwangmin LEE, Sungyong KO, Hwankook CHAE, Kunjoo PARK, Keehyun KIM, Weonmook LEE
  • Publication number: 20110056514
    Abstract: A workpiece de-chucking device of a plasma reactor for dry-cleaning the inside of a reaction chamber and an ElectroStatic chuck (ESC) during workpiece de-chucking and a workpiece de-chucking method using the same are provided. The workpiece de-chucking device includes a lifting unit, an ICP source power unit, and a controller. The lifting unit lifts a workpiece mounted on a top surface of an ESC. The ICP source power unit forms a magnetic field in an inductive coil arranged outside a dielectric window. The controller outputs a source power control signal, a lift control signal, and a de-chucking control signal.
    Type: Application
    Filed: August 11, 2010
    Publication date: March 10, 2011
    Inventors: Byoungil LEE, Hyeokjin Jang, Sungyong Ko, Minshik Kim