Patents by Inventor Hyeok-Jun Son
Hyeok-Jun Son has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12342601Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a fin-type pattern extending in a first direction; a gate electrode extending in a second direction over the fin-type pattern, the second direction being different from the first direction; spacers on sidewalls of the gate electrode; a capping structure on the gate electrode and the spacers, the capping structure including a first capping pattern and a second capping pattern, the second capping pattern being on the first capping pattern; and an interlayer insulating film surrounding sidewalls of each of the spacers and sidewalls of the capping structure, the interlayer insulating film being in contact with the first capping pattern.Type: GrantFiled: December 27, 2023Date of Patent: June 24, 2025Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Nam Gyu Cho, Rak Hwan Kim, Hyeok-Jun Son, Do Sun Lee, Won Keun Chung
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Publication number: 20250107136Abstract: Provided a semiconductor device. The semiconductor device comprises an active pattern extending in a first direction on a substrate, a gate stack extending in a second direction intersecting the first direction on the active pattern, and a source/drain pattern on at least one side of the gate stack, wherein the gate stack includes a first work function pattern, a second work function pattern on the first work function pattern, and a diffusion prevention pattern between the first work function pattern and the second work function pattern, and wherein a concentration of aluminum in the second work function pattern is greater than a concentration of aluminum in the first work function pattern.Type: ApplicationFiled: April 5, 2024Publication date: March 27, 2025Inventors: Hyeok-Jun SON, Chan Hyeong LEE
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Publication number: 20240128347Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a fin-type pattern extending in a first direction; a gate electrode extending in a second direction over the fin-type pattern, the second direction being different from the first direction; spacers on sidewalls of the gate electrode; a capping structure on the gate electrode and the spacers, the capping structure including a first capping pattern and a second capping pattern, the second capping pattern being on the first capping pattern; and an interlayer insulating film surrounding sidewalls of each of the spacers and sidewalls of the capping structure, the interlayer insulating film being in contact with the first capping pattern.Type: ApplicationFiled: December 27, 2023Publication date: April 18, 2024Inventors: Nam Gyu CHO, Rak Hwan KIM, Hyeok-Jun SON, Do Sun LEE, Won Keun CHUNG
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Patent number: 11881519Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a fin-type pattern extending in a first direction; a gate electrode extending in a second direction over the fin-type pattern, the second direction being different from the first direction; spacers on sidewalls of the gate electrode; a capping structure on the gate electrode and the spacers, the capping structure including a first capping pattern and a second capping pattern, the second capping pattern being on the first capping pattern; and an interlayer insulating film surrounding sidewalls of each of the spacers and sidewalls of the capping structure, the interlayer insulating film being in contact with the first capping pattern.Type: GrantFiled: May 27, 2022Date of Patent: January 23, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Nam Gyu Cho, Rak Hwan Kim, Hyeok-Jun Son, Do Sun Lee, Won Keun Chung
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Publication number: 20220285518Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a fin-type pattern extending in a first direction; a gate electrode extending in a second direction over the fin-type pattern, the second direction being different from the first direction; spacers on sidewalls of the gate electrode; a capping structure on the gate electrode and the spacers, the capping structure including a first capping pattern and a second capping pattern, the second capping pattern being on the first capping pattern; and an interlayer insulating film surrounding sidewalls of each of the spacers and sidewalls of the capping structure, the interlayer insulating film being in contact with the first capping pattern.Type: ApplicationFiled: May 27, 2022Publication date: September 8, 2022Inventors: Nam Gyu CHO, Rak Hwan KIM, Hyeok-Jun SON, Do Sun LEE, Won Keun CHUNG
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Patent number: 11349007Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a fin-type pattern extending in a first direction; a gate electrode extending in a second direction over the fin-type pattern, the second direction being different from the first direction; spacers on sidewalls of the gate electrode; a capping structure on the gate electrode and the spacers, the capping structure including a first capping pattern and a second capping pattern, the second capping pattern being on the first capping pattern; and an interlayer insulating film surrounding sidewalls of each of the spacers and sidewalls of the capping structure, the interlayer insulating film being in contact with the first capping pattern.Type: GrantFiled: September 9, 2020Date of Patent: May 31, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Nam Gyu Cho, Rak Hwan Kim, Hyeok-Jun Son, Do Sun Lee, Won Keun Chung
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Publication number: 20210210613Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a fin-type pattern extending in a first direction; a gate electrode extending in a second direction over the fin-type pattern, the second direction being different from the first direction; spacers on sidewalls of the gate electrode; a capping structure on the gate electrode and the spacers, the capping structure including a first capping pattern and a second capping pattern, the second capping pattern being on the first capping pattern; and an interlayer insulating film surrounding sidewalls of each of the spacers and sidewalls of the capping structure, the interlayer insulating film being in contact with the first capping pattern.Type: ApplicationFiled: September 9, 2020Publication date: July 8, 2021Inventors: Nam Gyu CHO, Rak Hwan KIM, Hyeok-Jun SON, Do Sun LEE, Won Keun CHUNG
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Patent number: 10593670Abstract: Integrated circuit devices include a substrate including first and second fin-type active regions and first and second gate structures. The first gate structure includes first gate insulating layer on the first fin-type active region to cover upper surface and both side surfaces of the first fin-type active region, first gate electrode on the first gate insulating layer and has first thickness in first direction perpendicular to upper surface of the substrate, and second gate electrode on the first gate electrode. The second gate structure includes second gate insulating layer on the second fin-type active region to cover upper surface and both side surfaces of the second fin-type active region, third gate insulating layer on the second gate insulating layer, third gate electrode on the third gate insulating layer and has second thickness different from the first thickness in the first direction, and fourth gate electrode on the third gate electrode.Type: GrantFiled: September 7, 2017Date of Patent: March 17, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jae-yeol Song, Wan-don Kim, Oh-seong Kwon, Hyeok-jun Son, Sang-jin Hyun, Hoon-joo Na
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Patent number: 10312340Abstract: A semiconductor device includes a first transistor comprising a first dielectric film on a substrate and a first work function metal film of a first conductivity type on the first dielectric film, a second transistor comprising a second dielectric film on the substrate and a second work function metal film of the first conductivity type on the second dielectric film, and a third transistor comprising a third dielectric film on the substrate and a third work function metal film of the first conductivity type on the third dielectric film. The first dielectric film comprises a work function tuning material and the second dielectric film does not comprise the work function tuning material. The first work function metal film has different thickness than the third work function metal film. Related methods are also described.Type: GrantFiled: September 27, 2017Date of Patent: June 4, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Wan-Don Kim, Oh-Seong Kwon, Hoon-Joo Na, Hyeok-Jun Son, Jae-Yeol Song, Sung-Kee Han, Sang-Jin Hyun
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Patent number: 9991357Abstract: A semiconductor device includes a semiconductor substrate including multiple active regions having a common conductivity type and separate, respective gate electrodes on the separate active regions. Different high-k dielectric layers may be between the separate active regions and the respective gate electrodes on the active regions. Different quantities of high-k dielectric layers may be between the separate active regions and the respective gate electrodes on the active regions. The different high-k dielectric layers may include different work-function adjusting materials.Type: GrantFiled: June 20, 2016Date of Patent: June 5, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Jaeyeol Song, Wandon Kim, Hoonjoo Na, Suyoung Bae, Hyeok-Jun Son, Sangjin Hyun
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Publication number: 20180019314Abstract: A semiconductor device includes a first transistor comprising a first dielectric film on a substrate and a first work function metal film of a first conductivity type on the first dielectric film, a second transistor comprising a second dielectric film on the substrate and a second work function metal film of the first conductivity type on the second dielectric film, and a third transistor comprising a third dielectric film on the substrate and a third work function metal film of the first conductivity type on the third dielectric film. The first dielectric film comprises a work function tuning material and the second dielectric film does not comprise the work function tuning material. The first work function metal film has different thickness than the third work function metal film. Related methods are also described.Type: ApplicationFiled: September 27, 2017Publication date: January 18, 2018Inventors: Wan-Don Kim, Oh-Seong KWON, Hoon-Joo NA, Hyeok-Jun SON, Jae-Yeol SONG, Sung-Kee HAN, Sang-Jin HYUN
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Publication number: 20180012889Abstract: Integrated circuit devices include a substrate including first and second fin-type active regions and first and second gate structures. The first gate structure includes first gate insulating layer on the first fin-type active region to cover upper surface and both side surfaces of the first fin-type active region, first gate electrode on the first gate insulating layer and has first thickness in first direction perpendicular to upper surface of the substrate, and second gate electrode on the first gate electrode. The second gate structure includes second gate insulating layer on the second fin-type active region to cover upper surface and both side surfaces of the second fin-type active region, third gate insulating layer on the second gate insulating layer, third gate electrode on the third gate insulating layer and has second thickness different from the first thickness in the first direction, and fourth gate electrode on the third gate electrode.Type: ApplicationFiled: September 7, 2017Publication date: January 11, 2018Inventors: Jae-Yeol Song, Wan-don Kim, Oh-seong Kwon, Hyeok-jun Son, Sang-jin Hyun, Hoon-joo NA
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Patent number: 9806075Abstract: Integrated circuit devices include a substrate including first and second fin-type active regions and first and second gate structures. The first gate structure includes first gate insulating layer on the first fin-type active region to cover upper surface and both side surfaces of the first fin-type active region, first gate electrode on the first gate insulating layer and has first thickness in first direction perpendicular to upper surface of the substrate, and second gate electrode on the first gate electrode. The second gate structure includes second gate insulating layer on the second fin-type active region to cover upper surface and both side surfaces of the second fin-type active region, third gate insulating layer on the second gate insulating layer, third gate electrode on the third gate insulating layer and has second thickness different from the first thickness in the first direction, and fourth gate electrode on the third gate electrode.Type: GrantFiled: January 20, 2016Date of Patent: October 31, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Jae-yeol Song, Wan-don Kim, Oh-seong Kwon, Hyeok-jun Son, Sang-jin Hyun, Hoon-joo Na
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Patent number: 9793368Abstract: Semiconductor devices are provided. A semiconductor device includes an insulating layer. The semiconductor device includes a rare earth element supply layer on the insulating layer. Moreover, the semiconductor device includes a metal layer that is on the rare earth element supply layer. The rare earth element supply layer is between the insulating layer and the metal layer. Methods of forming semiconductor devices are also provided.Type: GrantFiled: February 19, 2016Date of Patent: October 17, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Hyeok-jun Son, Wan-don Kim, Hoon-joo Na, Sang-jin Hyun, Yoon-tae Hwang, Jae-yeol Song
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Patent number: 9780183Abstract: A semiconductor device includes a first transistor comprising a first dielectric film on a substrate and a first work function metal film of a first conductivity type on the first dielectric film, a second transistor comprising a second dielectric film on the substrate and a second work function metal film of the first conductivity type on the second dielectric film, and a third transistor comprising a third dielectric film on the substrate and a third work function metal film of the first conductivity type on the third dielectric film. The first dielectric film comprises a work function tuning material and the second dielectric film does not comprise the work function tuning material. The first work function metal film has different thickness than the third work function metal film. Related methods are also described.Type: GrantFiled: January 6, 2016Date of Patent: October 3, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Wan-Don Kim, Oh-Seong Kwon, Hoon-Joo Na, Hyeok-Jun Son, Jae-Yeol Song, Sung-Kee Han, Sang-Jin Hyun
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Publication number: 20170005175Abstract: A semiconductor device includes a semiconductor substrate including multiple active regions having a common conductivity type and separate, respective gate electrodes on the separate active regions. Different high-k dielectric layers may he between the separate active regions and the respective gate electrodes on the active regions. Different quantities of high-k dielectric layers may be between the separate active regions and the respective gate electrodes on the active regions. The different high-k dielectric layers may include different work-function adjusting materials.Type: ApplicationFiled: June 20, 2016Publication date: January 5, 2017Applicant: Samsung Electronics Co., Ltd.Inventors: Jaeyeol SONG, Wandon KIM, Hoonjoo NA, Suyoung BAE, Hyeok-Jun SON, Sangjin HYUN
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Publication number: 20160315080Abstract: Integrated circuit devices include a substrate including first and second fin-type active regions and first and second gate structures. The first gate structure includes first gate insulating layer on the first fin-type active region to cover upper surface and both side surfaces of the first fin-type active region, first gate electrode on the first gate insulating layer and has first thickness in first direction perpendicular to upper surface of the substrate, and second gate electrode on the first gate electrode. The second gate structure includes second gate insulating layer on the second fin-type active region to cover upper surface and both side surfaces of the second fin-type active region, third gate insulating layer on the second gate insulating layer, third gate electrode on the third gate insulating layer and has second thickness different from the first thickness in the first direction, and fourth gate electrode on the third gate electrode.Type: ApplicationFiled: January 20, 2016Publication date: October 27, 2016Inventors: Jae-yeol SONG, Wan-don KIM, Oh-seong KWON, Hyeok-jun SON, Sang-jin HYUN, Hoon-joo NA
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Publication number: 20160315164Abstract: Semiconductor devices are provided. A semiconductor device includes an insulating layer. The semiconductor device includes a rare earth element supply layer on the insulating layer. Moreover, the semiconductor device includes a metal layer that is on the rare earth element supply layer. The rare earth element supply layer is between the insulating layer and the metal layer. Methods of forming semiconductor devices are also provided.Type: ApplicationFiled: February 19, 2016Publication date: October 27, 2016Inventors: Hyeok-jun Son, Wan-don Kim, Hoon-joo Na, Sang-jin Hyun, Yoon-tae Hwang, Jae-yeol Song
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Publication number: 20160225868Abstract: A semiconductor device includes a first transistor comprising a first dielectric film on a substrate and a first work function metal film of a first conductivity type on the first dielectric film, a second transistor comprising a second dielectric film on the substrate and a second work function metal film of the first conductivity type on the second dielectric film, and a third transistor comprising a third dielectric film on the substrate and a third work function metal film of the first conductivity type on the third dielectric film. The first dielectric film comprises a work function tuning material and the second dielectric film does not comprise the work function tuning material. The first work function metal film has different thickness than the third work function metal film. Related methods are also described.Type: ApplicationFiled: January 6, 2016Publication date: August 4, 2016Inventors: Wan-Don KIM, Oh-Seong KWON, Hoon-Joo NA, Hyeok-Jun SON, Jae-Yeol SONG, Sung-Kee HAN, Sang-Jin HYUN
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Patent number: 9048307Abstract: A semiconductor device having reduced leakage current and increased capacitance without increasing an equivalent oxide thickness (EOT) can be manufactured by a method that includes providing a substrate having a dummy gate pattern; forming a gate forming trench by removing the dummy gate pattern; forming a stacked insulation layer within the gate forming trench, wherein the forming of the stacked insulation layer includes forming a first high-k dielectric layer, forming a second high-k dielectric layer by performing heat treatment on the first high-k dielectric layer, and, after the heat treatment, forming a third high-k dielectric layer on the second high-k dielectric layer, the third high-k dielectric layer having a higher relative permittivity than the second high-k dielectric layer and having a dielectric constant of 40 or higher; and forming a gate electrode within the gate forming trench.Type: GrantFiled: June 14, 2012Date of Patent: June 2, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Jae-Yeol Song, Jeong-Hee Han, Sang-Jin Hyun, Hyeok-Jun Son, Sung-Kee Han