Abstract: A qubit memory of a quantum computer is provided. The qubit memory according to an embodiment includes a first readout unit, a first transmon, and a first data storage unit storing quantum information, and the first data storage unit includes a first superconducting waveguide layer, an insulating layer, and a superconductor layer sequentially stacked on a substrate. In one example, the first superconducting waveguide layer may include a superconducting resonator.

Abstract: A qubit memory of a quantum computer is provided. The qubit memory according to an embodiment includes a first readout unit, a first transmon, and a first data storage unit storing quantum information, and the first data storage unit includes a first superconducting waveguide layer, an insulating layer, and a superconductor layer sequentially stacked on a substrate. In one example, the first superconducting waveguide layer may include a superconducting resonator.

Abstract: A quantum processing device includes a first qubit chip including a first qubit device, a second qubit chip including a second qubit device, and a coupler configured to electrically connect the first qubit chip to the second qubit chip by using resonance.

Abstract: Provided is a quantum computing device and system. The quantum computing device includes a first qubit chip, a readout cavity structure surrounding a first end part of the first qubit chip, and a storage cavity structure surrounding a second end part of the first qubit chip, wherein the first qubit chip includes a first readout antenna disposed within the readout cavity structure, a first storage antenna disposed in the storage cavity structure, and a first qubit element provided between the first readout antenna and the first storage antenna, and wherein the first qubit element is disposed between the readout cavity structure and the storage cavity structure.

Abstract: A multi-mode resonator for a quantum computing element is included. In one general aspect, an apparatus including a multi-mode electromagnetic resonator includes a structure configured with a cavity therein that extends lengthwise in a first direction, the cavity including a first side surface and a second side surface facing each other, iris regions are at positions along the first direction on the first side surface of the cavity, the iris regions are arranged to overlap respective electromagnetic fields that form in the cavity in a target mode when electromagnetic energy is supplied to the cavity.

Abstract: Provided is a three-dimensional (3D) transmon qubit apparatus including a body portion, a driver, a transmon element disposed in an internal space of the body portion, a first tunable cavity module disposed in the internal space of the body, and comprising a first superconductive metal panel; and a second tunable cavity module disposed in the internal space of the body, and comprising a second superconductive metal panel, wherein the transmon element is disposed between the first superconductive metal panel and the second superconductive metal panel; wherein the first tunable cavity module and the second tunable cavity module are configured to adjust a distance between the first superconductive metal panel and the second superconductive metal panel, and wherein the driver is configured to tune a resonance frequency by adjusting a 3D cavity by adjusting the distance between the first superconductive metal panel and the second superconductive metal panel.

Abstract: An active circulator includes: an active filter; and a power divider serially connected to the active filter, wherein three or more combinations of the active filter and the power divider are connected to form a loop.

Abstract: A multi-mode resonator is provided. The multi-mode resonator includes a housing and a cavity disposed in the housing, wherein the cavity includes a main cavity and a plurality of first subcavities disposed on a first lateral side of the main cavity.

Abstract: A Josephson junction device includes a planar arrangement including a first two-dimensional (2D) material layer, a graphene layer, and a second 2D material layer planarly arranged on a device substrate, the first 2D material layer including at least one layer of a 2D material, the graphene layer forming a first junction with the first 2D material layer, and the second 2D material layer forming a second junction with the graphene layer and including at least one layer of a 2D material. A distance between the first junction and the second junction is within a range configured to cause a Josephson effect.

Abstract: A qubit memory of a quantum computer is provided. The qubit memory according to an embodiment includes a first readout unit, a first transmon, and a first data storage unit storing quantum information, and the first data storage unit includes a first superconducting waveguide layer, an insulating layer, and a superconductor layer sequentially stacked on a substrate. In one example, the first superconducting waveguide layer may include a superconducting resonator.

Abstract: A silicene electronic device includes a silicene material layer. The silicene material layer of the silicene electronic device has a 2D honeycomb structure of silicon atoms, is doped with at least one material of Group I, Group II, Group XVI, and Group XVII, and includes at least one of a p-type dopant region doped with a p-type dopant and an n-type dopant region doped with an n-type dopant. An electrode material layer including a material having a work function lower than the electron affinity of silicene is formed on the silicene material layer.

Abstract: Provided is a quantum computing device and system. The quantum computing device includes a first qubit chip, a readout cavity structure surrounding a first end part of the first qubit chip, and a storage cavity structure surrounding a second end part of the first qubit chip, wherein the first qubit chip includes a first readout antenna disposed within the readout cavity structure, a first storage antenna disposed in the storage cavity structure, and a first qubit element provided between the first readout antenna and the first storage antenna, and wherein the first qubit element is disposed between the readout cavity structure and the storage cavity structure.

Abstract: A Josephson junction device includes a planar arrangement including a first two-dimensional (2D) material layer, a graphene layer, and a second 2D material layer planarly arranged on a device substrate, the first 2D material layer including at least one layer of a 2D material, the graphene layer forming a first junction with the first 2D material layer, and the second 2D material layer forming a second junction with the graphene layer and including at least one layer of a 2D material. A distance between the first junction and the second junction is within a range configured to cause a Josephson effect.

Abstract: Provided is a three-dimensional (3D) transmon qubit apparatus including a body portion, a driver, a transmon element disposed in an internal space of the body portion, a first tunable cavity module disposed in the internal space of the body, and comprising a first superconductive metal panel; and a second tunable cavity module disposed in the internal space of the body, and comprising a second superconductive metal panel, wherein the transmon element is disposed between the first superconductive metal panel and the second superconductive metal panel; wherein the first tunable cavity module and the second tunable cavity module are configured to adjust a distance between the first superconductive metal panel and the second superconductive metal panel, and wherein the driver is configured to tune a resonance frequency by adjusting a 3D cavity by adjusting the distance between the first superconductive metal panel and the second superconductive metal panel.

Abstract: A silicene electronic device includes a silicene material layer. The silicene material layer of the silicene electronic device has a 2D honeycomb structure of silicon atoms, is doped with at least one material of Group I, Group II, Group XVI, and Group XVII, and includes at least one of a p-type dopant region doped with a p-type dopant and an n-type dopant region doped with an n-type dopant. An electrode material layer including a material having a work function lower than the electron affinity of silicene is formed on the silicene material layer.

Abstract: A silicene electronic device includes a silicene material layer. The silicene material layer of the silicene electronic device has a 2D honeycomb structure of silicon atoms, is doped with at least one material of Group I, Group II, Group XVI, and Group XVII, and includes at least one of a p-type dopant region doped with a p-type dopant and an n-type dopant region doped with an n-type dopant. An electrode material layer including a material having a work function lower than the electron affinity of silicene is formed on the silicene material layer.

Abstract: A silicene electronic device includes a silicene material layer. The silicene material layer of the silicene electronic device has a 2D honeycomb structure of silicon atoms, is doped with at least one material of Group I, Group II, Group XVI, and Group XVII, and includes at least one of a p-type dopant region doped with a p-type dopant and an n-type dopant region doped with an n-type dopant. An electrode material layer including a material having a work function lower than the electron affinity of silicene is formed on the silicene material layer.

Abstract: Provided are methods of forming nanostructures, methods of manufacturing semiconductor devices using the same, and semiconductor devices including nanostructures. A method of forming a nanostructure may include forming an insulating layer and forming a nanostructure on the insulating layer. The insulating layer may have a crystal structure. The insulating layer may include an insulating two-dimensional (2D) material. The insulating 2D material may include a hexagonal boron nitride (h-BN). The insulating layer may be formed on a catalyst metal layer. The nanostructure may include at least one of silicon (Si), germanium (Ge), and SiGe. The nanostructure may include at least one nanowire.

Abstract: Multi-qubit devices and quantum computers including the same are provided. The multi-qubit device may include a first layer including a plurality of qubits; a second layer that is disposed on the first layer, and comprises a plurality of flux generating elements that apply flux to the plurality of qubits, a plurality of wire patterns that provide current to the plurality of flux generating elements, and a plurality of plugs that are disposed perpendicular to the plurality of flux generating elements and the plurality of wire patterns and interconnect the plurality of flux generating elements and the plurality of wire patterns. Each of the plurality of flux generating elements may be integrated with a corresponding one of the plurality of wire patterns and a corresponding one of the plurality of plugs.

Abstract: Multi-qubit devices and quantum computers including the same are provided. The multi-qubit device may include a first layer including a plurality of qubits; a second layer that is disposed on the first layer, and comprises a plurality of flux generating elements that apply flux to the plurality of qubits, a plurality of wire patterns that provide current to the plurality of flux generating elements, and a plurality of plugs that are disposed perpendicular to the plurality of flux generating elements and the plurality of wire patterns and interconnect the plurality of flux generating elements and the plurality of wire patterns. Each of the plurality of flux generating elements may be integrated with a corresponding one of the plurality of wire patterns and a corresponding one of the plurality of plugs.