Abstract: Disclosed is a stealth device that has a double-band stealth function against millimeter-wavelength electromagnetic waves, has high absorption at a near-infrared laser wavelength, and has low emissivity of mid-infrared light and long-infrared light. The stealth device includes a wavelength-selective absorption pattern layer made of a material having electrical conductivity, wherein the wavelength-selective absorption pattern layer is composed of conductive thin-film patterns capable of causing plasmonic resonance at a first wavelength and a second wavelength different from the first wavelength; and a dielectric layer disposed below the wavelength-selective absorption pattern layer and made of a dielectric material.

Abstract: A semiconductor substrate inspection device is provided and includes: a function generator that generates a first signal and a second signal; an ultrasonic generator that receives the first signal generated from the function generator, generates an ultrasonic wave based on the first signal, and generates a surface wave signal on an upper surface of a substrate using the ultrasonic wave; and an electron beam measurer that inspects the surface wave signal, wherein the electron beam measurer includes: a laser light source that receives the second signal generated from the function generator and generates a first pulse laser beam based on the second signal; an electron beam generator that receives the first pulse laser beam and generates an electron beam that is emitted onto the upper surface of the substrate; and a backscattered electron detector that detects backscattered electrons generated based on the electron beam being incident on the substrate.

Abstract: A light-transmissive multispectral stealth device is disclosed.

Abstract: Disclosed is a stealth device that has a double-band stealth function against millimeter-wavelength electromagnetic waves, has high absorption at a near-infrared laser wavelength, and has low emissivity of mid-infrared light and long-infrared light. The stealth device includes a wavelength-selective absorption pattern layer made of a material having electrical conductivity, wherein the wavelength-selective absorption pattern layer is composed of conductive thin-film patterns capable of causing plasmonic resonance at a first wavelength and a second wavelength different from the first wavelength; and a dielectric layer disposed below the wavelength-selective absorption pattern layer and made of a dielectric material.