Abstract: An heat treatment apparatus for a vehicle body component includes, a jig base, a lower fixed die fixedly installed on the jig base and supporting the vehicle body component that is press-molded into a predetermined shape, a heating unit installed on the lower fixed die and locally heating the vehicle body component, a plurality of side movable dies that can move reciprocally disposed at both sides of the lower fixed die, installed on the jig base, and selectively combinable with the lower fixed die, a cooling unit installed on each side movable die and cooling a heating portion of the vehicle body component, and an upper movable die that can move reciprocally in the up and down direction correspondingly to the lower fixed die, and configured to clamp the vehicle body component through the lower fixed die and at least one of the side movable dies combined together.

Abstract: An heat treatment apparatus for a vehicle body component includes, a jig base, a lower fixed die fixedly installed on the jig base and supporting the vehicle body component that is press-molded into a predetermined shape, a heating unit installed on the lower fixed die and locally heating the vehicle body component, a plurality of side movable dies that can move reciprocally disposed at both sides of the lower fixed die, installed on the jig base, and selectively combinable with the lower fixed die, a cooling unit installed on each side movable die and cooling a heating portion of the vehicle body component, and an upper movable die that can move reciprocally in the up and down direction correspondingly to the lower fixed die, and configured to clamp the vehicle body component through the lower fixed die and at least one of the side movable dies combined together.

Abstract: A flow path switching valve includes a tube body including one or more inlets opened to communicate with a fluid supplying source and supplying fluid into an inside of the tube body, outlets opened at opposite sides to the respective inlets and selectively alternately discharging fluid from the inside of the tube body, drains opened at opposite ends and discharging operating fluid introduced through the outlet, and seat units respectively protrude on an inner circumference of the tube body between the inlet(s), outlets and drains. An operating rod, coaxially mounted in the tube body, includes spaced apart projection units and is connected to an operating unit at one end so as to reciprocate axially within the tube body responsive to the operating unit. Valve bodies are movably disposed on an outer circumference of the operating rod and are arranged between the respective projection units to face respective seat units.

Abstract: A flow path switching valve includes a tube body including one or more inlets opened to communicate with a fluid supplying source and supplying fluid into an inside of the tube body, outlets opened at opposite sides to the respective inlets and selectively alternately discharging fluid from the inside of the tube body, drains opened at opposite ends and discharging operating fluid introduced through the outlet, and seat units respectively protrude on an inner circumference of the tube body between the inlet(s), outlets and drains. An operating rod, coaxially mounted in the tube body, includes spaced apart projection units and is connected to an operating unit at one end so as to reciprocate axially within the tube body responsive to the operating unit. Valve bodies are movably disposed on an outer circumference of the operating rod and are arranged between the respective projection units to face respective seat units.

Abstract: The present invention relates to a self-aligned organic thin film transistor (TFT) and a fabrication method thereof. According to the present invention, a gate electrode is formed from a first conductive layer patterned on a substrate, a gate dielectric layer is formed on top of the substrate to cover the gate electrode, and a second conductive layer is then formed on the gate dielectric layer. Subsequently, ultraviolet (UV) backside exposure for irradiating the second conductive layer with UV from a bottom side of the substrate using the gate electrode as a mask, and source/drain electrodes self-aligned with the gate electrode is then formed not to overlap with the gate electrode by developing the second conductive electrode. Thereafter, an organic semiconductor layer is formed between and on the source/drain electrodes. In the present invention, an organic TFT can be fabricated using a reel-to-reel process, and therefore, the fabrication process can be simplified.