Abstract: A nonvolatile memory device includes a plurality of memory cells that have a first state and a second state different from each other. A method of searching a read voltage of the nonvolatile memory device includes determining a number n that represents a number of times a data read operation is performed, selecting n read voltage levels of the read voltage such that a number of read voltage levels is equal to the number of times the data read operation, where the n read voltage levels differ from each other, generating n cell count values by performing n data read operations on the plurality of memory cells using all of the n read voltage levels, and generating an optimal read voltage level of the read voltage by performing a regression analysis based on a first-order polynomial using the n read voltage levels and the n cell count values.

Abstract: The present relates to a dental splint (1) comprising a plurality of stamp portions (11) each of them being adapted to receive a predetermined quantity of reconstructive material (14) and to be placed on a predetermined tooth, a base support portion (13) for supporting the stamp portions (11) and a leg portion (12) linking each stamp portion (11) to the base support portion (13), characterized in that each stamp portion (11) presents a surface (111) adapted to cover the area of the tooth where material (14) has to be added only.