Abstract: Disclosed herein are a method for manufacturing a graphene thermoelectric device and a graphene thermoelectric device manufactured thereby. The method for manufacturing a graphene thermoelectric device includes: forming a graphene channel layer on a substrate; forming a thermoelectric structure by depositing a first electrode and a second electrode on both ends of the graphene channel layer; and doping the graphene channel layer by dipping the thermoelectric structure into a doping solution.

Abstract: Disclosed herein is a photodetector utilizing graphene. A single-layer graphene channel is formed on a semiconductor substrate doped with n-type impurity. The graphene channel has an end connected to a source electrode and is physically separated from a drain electrode. Light having passed through a gate insulation layer and a gate electrode generates electron-hole pairs at the interface between the graphene channel and the semiconductor substrate forming a Schottky junction, and a photocurrent is generated by a Schottky barrier. In addition, the Schottky barrier is changed according to an applied gate voltage, thereby changing the photocurrent.

Abstract: A graphene multiple-valued logic device and a fabrication method thereof are disclosed. The graphene multiple-valued logic device includes a substrate, a graphene channel layer disposed on the substrate, source and drain electrodes disposed at both ends of the graphene channel layer, respectively, an insulator film formed on the graphene channel layer; and at least two gate electrodes disposed on the insulator film with a predetermined gap defined therebetween. The device allows adjustment of conductivity and resistance of the graphene channel layer depending on a gate voltage, whereby electric current flowing in the device can be variously changed when applied to a multiple-valued logic system.