Patents by Inventor Hyeon-Jun SEONG

Hyeon-Jun SEONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming circuits using seed layer and etchant composition for selective etching of seed layer
    Patent number: 11317514
    Abstract: The present invention relates to a method for forming a circuit using a seed layer. The method for forming a circuit using a seed layer according to the present invention, may realize a fine pitch, increase the adhesion of the circuit, and prevent the migration phenomenon.
    Type: Grant
    Filed: February 9, 2018
    Date of Patent: April 26, 2022
    Assignee: InkTec Co., Ltd.
    Inventors: Kwang-Choon Chung, Byung Woong Moon, Su Han Kim, Jung Yoon Moon, Hyeon-Jun Seong, Jae Rin Kim
  • Circuit forming method using selective etching of electrically conductive metal this film seed layer and etching solution composition
    Patent number: 11160171
    Abstract: The present invention relates to an etching solution composition for selectively etching only silver, a silver alloy, or a silver compound, and to a circuit forming method using the composition. The circuit forming method according to the present invention is characterized in that, in a substrate material in which an electrically conductive seed layer and a circuit layer are formed of heterogeneous metals, only the seed layer is selectively etched to enable the implementation of fine pitches. In addition, the present invention relates to a circuit forming method and an etching solution composition, wherein only a seed layer of silver (Ag), a silver alloy, or a silver compound is selectively etched without etching a copper (Cu) plated circuit.
    Type: Grant
    Filed: February 14, 2018
    Date of Patent: October 26, 2021
    Assignee: InkTee Co., Ltd.
    Inventors: Kwang-Choon Chung, Su Han Kim, Jung Yoon Moon, Hyeon-Jun Seong, Byung Woong Moon
  • CIRCUIT FORMING METHOD USING SELECTIVE ETCHING OF ELECTRICALLY CONDUCTIVE METAL THIS FILM SEED LAYER AND ETCHING SOLUTION COMPOSITION
    Publication number: 20200389979
    Abstract: The present invention relates to an etching solution composition for selectively etching only silver, a silver alloy, or a silver compound, and to a circuit forming method using the composition. The circuit forming method according to the present invention is characterized in that, in a substrate material in which an electrically conductive seed layer and a circuit layer are formed of heterogeneous metals, only the seed layer is selectively etched to enable the implementation of fine pitches. In addition, the present invention relates to a circuit forming method and an etching solution composition, wherein only a seed layer of silver (Ag), a silver alloy, or a silver compound is selectively etched without etching a copper (Cu) plated circuit.
    Type: Application
    Filed: February 14, 2018
    Publication date: December 10, 2020
    Applicant: InkTec Co., Ltd.
    Inventors: Kwang-Choon CHUNG, Su Han KIM, Jung Yoon MOON, Hyeon-Jun SEONG, Byung Woong MOON
  • METHOD FOR FORMING CIRCUITS USING SEED LAYER AND ETCHANT COMPOSITION FOR SELECTIVE ETCHING OF SEED LAYER
    Publication number: 20200221578
    Abstract: The present invention relates to a method for forming a circuit using a seed layer. The method for forming a circuit using a seed layer according to the present invention, may realize a fine pitch, increase the adhesion of the circuit, and prevent the migration phenomenon.
    Type: Application
    Filed: February 9, 2018
    Publication date: July 9, 2020
    Applicant: Ink Tec Co., Ltd.
    Inventors: Kwang-Choon CHUNG, Byung Woong MOON, Su Han KIM, Jung Yoon MOON, Hyeon-Jun SEONG, Jae Rin KIM