Patents by Inventor Hyeon Seon YU

Hyeon Seon YU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Gate driving circuit including constant current sources, and switching apparatus and power supply apparatus having the same
    Patent number: 9780771
    Abstract: A gate driving circuit may include: a bias unit receiving an input signal having preset high and low signal levels, including a first N-MOSFET turned on in the case in which the input signal has the high level and a first P-MOSFET turned on in the case in which the input signal has the low level, and supplying bias powers by the turning-on of the first N-MOSFET and the first P-MOSFET; and an amplifying unit including a second N-MOSFET turned on by receiving the bias power supplied from the first N-MOSFET in the case in which the input signal has the high level and a second P-MOSFET turned on by receiving the bias power supplied from the first P-MOSFET turned on in the case in which the input signal has the low level and providing a gate signal depending on the turning-on of the second N-MOSFET and the second P-MOSFET.
    Type: Grant
    Filed: May 27, 2014
    Date of Patent: October 3, 2017
    Assignee: UNIVERSITY OF SEOUL INDUSTRY COOPERATION FOUNDATION
    Inventors: Sang Hyun Cha, Deuk Hee Park, Yun Joong Lee, Joong Ho Choi, Je Hyeon Yu, Hyeon Seon Yu, Chang Seok Lee
  • GATE DRIVING CIRCUIT, AND SWITCHING APPARATUS AND POWER SUPPLY APPARATUS HAVING THE SAME
    Publication number: 20150117065
    Abstract: A gate driving circuit may include: a bias unit receiving an input signal having preset high and low signal levels, including a first N-MOSFET turned on in the case in which the input signal has the high level and a first P-MOSFET turned on in the case in which the input signal has the low level, and supplying bias powers by the turning-on of the first N-MOSFET and the first P-MOSFET; and an amplifying unit including a second N-MOSFET turned on by receiving the bias power supplied from the first N-MOSFET in the case in which the input signal has the high level and a second P-MOSFET turned on by receiving the bias power supplied from the first P-MOSFET turned on in the case in which the input signal has the low level and providing a gate signal depending on the turning-on of the second N-MOSFET and the second P-MOSFET.
    Type: Application
    Filed: May 27, 2014
    Publication date: April 30, 2015
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Sang Hyun CHA, Deuk Hee PARK, Yun Joong LEE, Joong Ho CHOI, Je Hyeon YU, Hyeon Seon YU, Chang Seok LEE