Abstract: Disclosed is a method of depositing thin films, the method comprising supplying a metal precursor to the inside of a chamber where a substrate is placed to adsorb the metal precursor onto the substrate; purging the inside of the chamber; supplying a reactant to the inside of the chamber to react with the adsorbed metal precursor and form a thin film, wherein the metal precursor includes one or more halogen groups and one or more organic ligands.

Abstract: Disclosed is a method of a method of treating thin films, the method comprising supplying a modifier containing a halogen group to the inside of a chamber where a substrate is placed to adsorb the modifier onto a thin film formed on the substrate; purging the inside of the chamber; supplying an etching activator to the inside of the chamber to react with the adsorbed modifier and treat the thin film; and purging the inside of the chamber.

Abstract: Embodiments of the disclosure relate to a contact hole assembly and an electronic device and may, more specifically, provide a contact hole assembly comprising a first metal layer to which an electrical signal is input, an insulation layer formed on the first metal layer, a second metal layer formed on the insulation layer and outputting the electrical signal, and a contact hole electrically connecting the first metal layer and the second metal layer, wherein the contact hole includes a via area penetrating the insulation layer, a conductor formed in the via area, and a recess area where a portion of a surface of the conductor is removed.

Abstract: Disclosed is a method of forming an area-selective thin film, the method comprising supplying a nuclear growth retardant to the inside of the chamber in which the substrate is placed, so that the nuclear growth retardant is adsorbed to a non-growth region of the substrate; purging the interior of the chamber; supplying a precursor to the inside of the chamber, so that the precursor is adsorbed to a growth region of the substrate; purging the interior of the chamber; and supplying a reaction material to the inside of the chamber, so that the reaction material reacts with the adsorbed precursor to form the thin film.

Abstract: Provided is a method for areal selective forming of a thin film according to an exemplary embodiment of the present disclosure including: a substrate preparation step of supplying and stabilizing a substrate including a growth area and a non-growth area into a chamber; a precursor supply step of supplying a metal precursor compound into the chamber and adsorbing the metal precursor compound to the substrate; a purge step of purging the inside of the chamber; and a thin film formation step of supplying a reaction material into the chamber to react with the metal precursor compound and form a thin film, in which the metal precursor compound is a Group 5 metal precursor compound represented by Chemical Formula 1 below:

Abstract: Disclosed is a method of forming an area-selective thin film, the method comprising supplying a nuclear growth retardant to the inside of the chamber in which the substrate is placed, so that the nuclear growth retardant is adsorbed to a non-growth region of the substrate; purging the interior of the chamber; supplying a precursor to the inside of the chamber, so that the precursor is adsorbed to a growth region of the substrate; purging the interior of the chamber; and supplying a reaction material to the inside of the chamber, so that the reaction material reacts with the adsorbed precursor to form the thin film.

Abstract: Disclosed is a method for manufacturing an aluminum precursor formed by mixing 1 to 3 moles of a compound represented by the following Chemical Formula 1 or following Chemical Formula 2 and 1 to 3 moles of a compound represented by the following Chemical Formula 3. wherein X is O or S, and R1 or R2 is each independently selected from an alkyl group having 1 to 8 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, and an aryl group having 6 to 12 carbon atoms. wherein X is O or S, n is 1 to 5, and R1 to R4 are each independently selected from a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, and an aryl group having 6 to 12 carbon atoms. wherein R1, R2 and R3 are different from each other, and each independently selected from a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, a dialkylamine having 1 to 6 carbon atoms, a cycloamine group having 1 to 6 carbon atoms, or a halogen atom.