Patents by Inventor Hyeon Sik CHO

Hyeon Sik CHO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11984601
    Abstract: A conductive material dispersion liquid, and an electrode and a lithium secondary battery manufactured using the same. The conductive material dispersion liquid includes a carbon-based conductive material, a dispersant, and a dispersion medium. The dispersant is a copolymer including a first repeating unit represented by Chemical Formula 1, a second repeating unit represented by Chemical Formula 2, and a third repeating unit represented by Chemical Formula 3, and the dispersion medium is a non-aqueous solvent.
    Type: Grant
    Filed: August 21, 2019
    Date of Patent: May 14, 2024
    Assignee: LG ENERGY SOLUTION, LTD.
    Inventors: Houng Sik Yoo, Hyeon Choi, Dong Hyun Kim, Hyun Sik Chae, Sang Hoon Choy, Hyung Suk Cho
  • Publication number: 20240071757
    Abstract: A method of manufacturing a stacked structure includes forming a first metal buffer layer including crystal grains on a base substrate, forming a second metal buffer material layer on the first metal buffer layer, and crystallizing the second metal buffer material layer to form a second metal buffer layer, wherein the second metal buffer material layer includes crystal grains, and a density of the crystal grains of the second metal buffer material layer is lower than a density of the crystal grains of the first metal buffer layer.
    Type: Application
    Filed: November 6, 2023
    Publication date: February 29, 2024
    Applicants: Samsung Display Co., LTD., Industry-Academic Cooperation Foundation, Yonsei University
    Inventors: Mann Ho CHO, Kwang Sik JEONG, Hyeon Sik KIM, Hyun Eok SHIN, Byung Soo SO, Ju Hyun LEE
  • Publication number: 20240068091
    Abstract: Disclosed is a method of forming an area-selective thin film, the method comprising supplying a nuclear growth retardant to the inside of the chamber in which the substrate is placed, so that the nuclear growth retardant is adsorbed to a non-growth region of the substrate; purging the interior of the chamber; supplying a precursor to the inside of the chamber, so that the precursor is adsorbed to a growth region of the substrate; purging the interior of the chamber; and supplying a reaction material to the inside of the chamber, so that the reaction material reacts with the adsorbed precursor to form the thin film.
    Type: Application
    Filed: January 5, 2022
    Publication date: February 29, 2024
    Applicant: EGTM Co., Ltd.
    Inventors: Jae Min KIM, Ha Na KIM, Woong Jin CHOI, Ji Yeon HAN, Ju Hwan JEONG, Hyeon Sik CHO
  • Publication number: 20230287014
    Abstract: Disclosed is a method for manufacturing an aluminum precursor formed by mixing 1 to 3 moles of a compound represented by the following Chemical Formula 1 or following Chemical Formula 2 and 1 to 3 moles of a compound represented by the following Chemical Formula 3. wherein X is O or S, and R1 or R2 is each independently selected from an alkyl group having 1 to 8 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, and an aryl group having 6 to 12 carbon atoms. wherein X is O or S, n is 1 to 5, and R1 to R4 are each independently selected from a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, and an aryl group having 6 to 12 carbon atoms. wherein R1, R2 and R3 are different from each other, and each independently selected from a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, a dialkylamine having 1 to 6 carbon atoms, a cycloamine group having 1 to 6 carbon atoms, or a halogen atom.
    Type: Application
    Filed: May 10, 2023
    Publication date: September 14, 2023
    Applicant: EGTM Co., Ltd.
    Inventors: Kyu Ho CHO, Ha Na KIM, Jae Min KIM, Ji Yeon HAN, Duck Hyeon SEO, Ju Hwan JEONG, Hyun Ju JUNG, Hyeon Sik CHO, Myeong Il KIM