Patents by Inventor Hyeon Taeg Gim

Hyeon Taeg Gim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and chamber for inductively coupled plasma processing for cylinderical material with three-dimensional surface
    Patent number: 8591711
    Abstract: The present invention relates to an inductively coupled plasma processing chamber and method for a cylindrical workpiece with a three-dimensional profile, and more particularly to an inductively coupled plasma processing reactor and method for a cylindrical workpiece with a three-dimensional profile, in which the workpiece serving as an internal RF antenna is connected to an RF power source through an impedance matching network at one end, and a terminating capacitor at another end so as to achieve low plasma contamination, confine dense uniform plasma in the substrate vicinity and suppress secondary electrons emitted from the substrate, and a plasma process can be applied to a 3-D linear semiconductor device, a metal, glass, ceramic or polymer substrate having planar or 3-D structured micro or nano patterns, and the like.
    Type: Grant
    Filed: September 29, 2008
    Date of Patent: November 26, 2013
    Assignees: Korea Electrotechnology Research Institute, New Optics, Ltd.
    Inventors: Sung Il Chung, Sergey Alexandrovich Nikiforov, Hyeon Seok Oh, Pan Kyeom Kim, Hyeon Taeg Gim, Jeong Woo Jeon
  • Method and Chamber for Inductively Coupled Plasma Processing for Cylinderical Material With Three-Dimensional Surface
    Publication number: 20110253674
    Abstract: The present invention relates to an inductively coupled plasma processing chamber and method for a cylindrical workpiece with a three-dimensional profile, and more particularly to an inductively coupled plasma processing reactor and method for a cylindrical workpiece with a three-dimensional profile, in which the workpiece serving as an internal RF antenna is connected to an RF power source through an impedance matching network at one end, and a terminating capacitor at another end so as to achieve low plasma contamination, confine dense uniform plasma in the substrate vicinity and suppress secondary electrons emitted from the substrate, and a plasma process can be applied to a 3-D linear semiconductor device, a metal, glass, ceramic or polymer substrate having planar or 3-D structured micro or nano patterns, and the like.
    Type: Application
    Filed: September 29, 2008
    Publication date: October 20, 2011
    Applicants: New Optics, Ltd., Korea Electrotechnology Research Institute
    Inventors: Sung Il Chung, S.A. Nikiforov, Hyeon Seok Oh, Pan Kyeom Kim, Hyeon Taeg Gim, Jeong Woo Jeon