Abstract: A sensor-embedded display panel includes a light emitting element and a sensor which include separate portions of a first common auxiliary layer including a hole transport material and a second common auxiliary layer including an electron transport material. The sensor includes first and second semiconductor layers proximate to the first and second common auxiliary layers, respectively, and including a p-type semiconductor and a non-fullerene n-type semiconductor having a LUMO energy level deeper than that of the electron transport material, respectively. An insertion layer between the second semiconductor layer and the second common auxiliary layer includes a metal, a metal compound, or any combination thereof. A work function of the metal or a LUMO energy level of the metal compound is deeper or shallower than the LUMO energy level of the non-fullerene n-type semiconductor and the LUMO energy level of the electron transport material within less than about 1.3 eV, respectively.

Abstract: A sensor may include a reflective electrode, a photoelectric conversion layer on the reflective electrode and including one or more photoelectric conversion materials, a semi-transmissive electrode on the photoelectric conversion layer, a light transmitting buffer layer on the semi-transmissive electrode, and a semi-transmissive auxiliary layer on the light transmitting buffer layer.

Abstract: A display panel may include a light emitting element including a light emitting layer and a sensor including a photosensitive layer on a substrate. The light emitting element and the sensor each may include respective portions of first and second common auxiliary layers, which may be continuous under and over the light emitting layer and the photosensitive layer. The first and second common auxiliary layers respectively may include a hole transport material and an electron transport material. The photosensitive layer may include first and second semiconductor layers close to the first and second common auxiliary layers, respectively. The first and second semiconductor layers respectively may include a p-type semiconductor and an n-type semiconductor. The second semiconductor layer may have an uneven surface facing the second common auxiliary layer and may have an average roughness (Rq) of greater than or equal to about 5 nm.

Abstract: Disclosed is a copolymer containing an ?,?-ethylenically unsaturated monomer, a phosphorylcholine monomer, and a cross-linking agent as a monomer. Also disclosed are a cosmetic composition containing the copolymer and a cosmetic material using the cosmetic composition.

Abstract: Disclosed is a copolymer containing an ?,?-ethylenically unsaturated monomer, a phosphorylcholine monomer, and a cross-linking agent as a monomer. Also disclosed are a cosmetic composition containing the copolymer and a cosmetic material using the cosmetic composition.

Abstract: The present invention relates to a phytandiol amine derivative represented by the following formula (I) and compositions for treating acne comprising the same: wherein each of Y and Z is OH with the proviso that X is NH2, each of X and Z is zOH with the proviso that Y is NH2, and each of X and Y is OH with the proviso that Z is NH2.

Abstract: The present invention relates to a phytandiol amine derivative represented by the following formula (I) and compositions for treating acne comprising the same: (I) wherein each of Y and Z is OH with the proviso that X is NH2, each of X and Z is OH with the proviso that Y is NH2, and each of X and Y is OH with the proviso that Z is NH2.