Abstract: A display substrate includes a substrate, a pixel part, a pad part and a sacrificial electrode. The substrate includes a display area and a peripheral area. The pixel part is on the display area and includes a switching element, and a pixel electrode electrically connected to the switching element. The pad part is on the peripheral area and contacts a terminal of an external device. The pad part includes a pad electrode a contact electrode. The pad electrode includes a first metal layer, and a second metal layer on the first metal layer, and the contact electrode contacts the second metal layer. The sacrificial electrode is spaced apart from the pad electrode and contacts the contact electrode. An exposed portion of the sacrificial electrode is exposed to an external side of the display substrate.

Abstract: A display substrate includes a substrate, a pixel part, a pad part and a sacrificial electrode. The substrate includes a display area and a peripheral area. The pixel part is on the display area and includes a switching element, and a pixel electrode electrically connected to the switching element. The pad part is on the peripheral area and contacts a terminal of an external device. The pad part includes a pad electrode a contact electrode. The pad electrode includes a first metal layer, and a second metal layer on the first metal layer, and the contact electrode contacts the second metal layer. The sacrificial electrode is spaced apart from the pad electrode and contacts the contact electrode. An exposed portion of the sacrificial electrode is exposed to an external side of the display substrate.

Abstract: A semiconductor device with a load resistor is manufactured such that a contact is formed at both ends of the load resistor, and at least one contact is formed between the contacts, in order to prevent impurities from being generated within each contact while the contacts are being generated by etching an insulation layer phenomena of electric charge build up from occurring when an etching process fabricates an insulation layer to generate the contact in a long load resistor located under the insulation layer and insulated electrically and physically.

Abstract: A semiconductor device with a load resistor is manufactured such that a contact is formed at both ends of the load resistor, and at least one contact is formed between the contacts, in order to prevent impurities from being generated within each contact while the contacts are being generated by etching an insulation layer phenomena of electric charge build up from occurring when an etching process fabricates an insulation layer to generate the contact in a long load resistor located under the insulation layer and insulated electrically and physically.

Abstract: A semiconductor device with a load resistor is manufactured such that a contact is formed at both ends of the load resistor, and at least one contact is formed between the contacts, in order to prevent impurities from being generated within each contact while the contacts are being generated by etching an insulation layer phenomena of electric charge build up from occurring when an etching process fabricates an insulation layer to generate the contact in a long load resistor located under the insulation layer and insulated electrically and physically.

Abstract: A semiconductor device with a load resistor is manufactured such that a contact is formed at both ends of the load resistor, and at least one contact is formed between the contacts, in order to prevent impurities from being generated within each contact while the contacts are being generated by etching an insulation layer phenomena of electric charge build up from occurring when an etching process fabricates an insulation layer to generate the contact in a long load resistor located under the insulation layer and insulated electrically and physically.