Patents by Inventor Hyeong-Deok Lee

Hyeong-Deok Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing transistor having recessed channel
    Patent number: 7442607
    Abstract: A method of fabricating a transistor with a recessed channel is provided. The method includes forming trenches for a recessed channel on a semiconductor substrate, depositing an isolation layer on the semiconductor substrate on which the trenches are formed, depositing a gate dielectric layer on the semiconductor substrate so that the gate dielectric layer can be extended to bottoms and sidewalls of the trenches, forming gates to fill the trenches, and forming source and drain regions in the semiconductor substrate adjacent to the gates.
    Type: Grant
    Filed: September 19, 2006
    Date of Patent: October 28, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Min Kim, Ju-Bum Lee, Hyeong-Deok Lee, Seung-Jae Lee
  • METHOD OF MANUFACTURING TRANSISTOR HAVING RECESSED CHANNEL
    Publication number: 20070020882
    Abstract: A method of fabricating a transistor with a recessed channel is provided. The method includes forming trenches for a recessed channel on a semiconductor substrate, depositing an isolation layer on the semiconductor substrate on which the trenches are formed, depositing a gate dielectric layer on the semiconductor substrate so that the gate dielectric layer can be extended to bottoms and sidewalls of the trenches, forming gates to fill the trenches, and forming source and drain regions in the semiconductor substrate adjacent to the gates.
    Type: Application
    Filed: September 19, 2006
    Publication date: January 25, 2007
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Min Kim, Ju-Bum Lee, Hyeong-Deok Lee, Seung-Jae Lee