Abstract: Discussed is a bolting device that effectively protects an internal configuration of a battery pack and increases manufacturing efficiency during a bolting operation. The bolting device for manufacturing a battery pack includes an electric screwdriver provided with a rotation motor; a driver bit connected to the rotation motor to enable a rotation movement and configured to rotate a bolt; a bit guide member provided with a hollow tube such that the driver bit is inserted into an inside of the hollow tube to be movable; and a guide jig provided with a main body configured to be mounted on an upper portion of a pack housing, the main body having a plate shape and having at least one through hole, and a fixing member inserted into the through hole and mounted therein, and having an insertion hole.

Abstract: A structure including quantum dots formed in a surface control region, a method of forming a structure including quantum dots in a surface control region, a surface-controlled substrate provided with the structure including quantum dots, and a photoelectronic element using the same. The method includes forming multiple surface control layers that differ in etch resistance on a substrate, securing a surface control region on the substrate by forming control patterns having respectively different sizes in the respective surface control layers depending on the etch resistance values through an exposure process, forming the structure including quantum dots in the surface control region by using the plurality of surface control layers as masks, and removing the surface control layers.

Abstract: A transfer method of transferring an object to a target substrate by using a deformable film is provided. The method includes: a first process of forming an object on a source substrate, a second process of placing a deformable film on the source substrate on which the object is formed, a third process of embedding the object into the deformable film, a fourth process of separating an object, which is to be transferred, from the source substrate, integrating the transfer object in or on a surface of the deformable film, and separating deformable film, in which the transfer object is integrated, from the source substrate, and a fifth process of transferring the object integrated into the deformable film to a target substrate.

Abstract: A transfer method of transferring an object to a target substrate by using a deformable film is provided. The method includes: a first process of forming an object on a source substrate, a second process of placing a deformable film on the source substrate on which the object is formed, a third process of embedding the object into the deformable film, a fourth process of separating an object, which is to be transferred, from the source substrate, integrating the transfer object in or on a surface of the deformable film, and separating deformable film, in which the transfer object is integrated, from the source substrate, and a fifth process of transferring the object integrated into the deformable film to a target substrate.

Abstract: A gallium nitride-based sensor having a heater structure and a method of manufacturing the same are disclosed, the method including growing an n-type or p-type GaN layer on a substrate, growing a barrier layer on the n-type or p-type GaN layer, sequentially growing a u-GaN layer and a layer selected from among an AlxGa1-xN layer, an InxAl1-xN layer and an InxAlyGa1-x-yN layer on the barrier layer, patterning the n-type or p-type GaN layer to form an electrode, forming the electrode along the pattern formed on the n-type or p-type GaN layer, and forming a sensing material layer on the layer selected from among the AlxGa1-xN layer, the InxAl1-xN layer and the InxAlyGa1-x-yN layer, wherein a HEMT sensor or a Schottky diode sensor can be heated using an n-GaN (or p-GaN) layer, thus increasing the sensitivity of the sensor and reducing the restoration time.

Abstract: A gallium nitride-based sensor having a heater structure and a method of manufacturing the same are disclosed, the method including growing an n-type or p-type GaN layer on a substrate, growing a barrier layer on the n-type or p-type GaN layer, sequentially growing a u-GaN layer and a layer selected from among an AlxGa1-xN layer, an InxAl1-xN layer and an InxAlyGa1-x-yN layer on the barrier layer, patterning the n-type or p-type GaN layer to form an electrode, forming the electrode along the pattern formed on the n-type or p-type GaN layer, and forming a sensing material layer on the layer selected from among the AlxGa1-xN layer, the InxAl1-xN layer and the InxAlyGa1-x-yN layer, wherein a HEMT sensor or a Schottky diode sensor can be heated using an n-GaN (or p-GaN) layer, thus increasing the sensitivity of the sensor and reducing the restoration time.

Abstract: Disclosed are a patterning method of a metal oxide thin film using nanoimprinting, and a manufacturing method of a light emitting diode (LED). The method for forming a metal oxide thin film pattern using nanoimprinting includes: coating a photosensitive metal-organic material precursor solution on a substrate; preparing a mold patterned to have a protrusion and depression structure; pressurizing the photosensitive metal-organic material precursor coating layer with the patterned mold; forming a cured metal oxide thin film pattern by heating the pressurized photosensitive metal-organic material precursor coating layer or by irradiating ultraviolet rays to the pressurized photosensitive metal-organic material precursor coating layer while being heated; and removing the patterned mold from the metal oxide thin film pattern, and selectively further includes annealing the metal oxide thin film pattern.

Abstract: A method for forming a metal oxide thin film pattern using nanoimprinting according to one embodiment of the present invention includes: coating a photosensitive metal-organic material precursor solution on a substrate; pressurizing the photosensitive metal-organic material precursor coating layer to a mold patterned to have a protrusion and depression structure; forming the metal oxide thin film pattern by irradiating ultraviolet rays to the pressurized photosensitive metal-organic material precursor coating layer to cure it; and removing the patterned mold from the metal oxide thin film pattern.

Abstract: Disclosed are a patterning method of a metal oxide thin film using nanoimprinting, and a manufacturing method of a light emitting diode (LED). The method for forming a metal oxide thin film pattern using nanoimprinting includes: coating a photosensitive metal-organic material precursor solution on a substrate; preparing a mold patterned to have a protrusion and depression structure; pressurizing the photosensitive metal-organic material precursor coating layer with the patterned mold; forming a cured metal oxide thin film pattern by heating the pressurized photosensitive metal-organic material precursor coating layer or by irradiating ultraviolet rays to the pressurized photosensitive metal-organic material precursor coating layer while being heated; and removing the patterned mold from the metal oxide thin film pattern, and selectively further includes annealing the metal oxide thin film pattern.

Abstract: A method for forming a metal oxide thin film pattern using nanoimprinting according to one embodiment of the present invention includes: coating a photosensitive metal-organic material precursor solution on a substrate; pressurizing the photosensitive metal-organic material precursor coating layer to a mold patterned to have a protrusion and depression structure; forming the metal oxide thin film pattern by irradiating ultraviolet rays to the pressurized photosensitive metal-organic material precursor coating layer to cure it; and removing the patterned mold from the metal oxide thin film pattern.