Abstract: A method for the formation of gate in a semiconductor device is disclosed. The method for the formation of gate in a semiconductor device, comprising the steps of: forming amorphous silicon and polysilicon over a gate insulating film atop a semiconductor substrate, in due order; implanting impurity ions into the polysilicon and carrying out heat treatment; and forming a layer of a refractory metal over the silicon and carrying out heat treatment, to form polycide. Capable of preventing the degradation which is attributed to the penetration of impurities and thermal instability when forming a P.sup.+ polygate, the method contribute to the improvement in electrical properties.