Patents by Inventor Hyeong-Joon Kim

Hyeong-Joon Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5712181
    Abstract: A method for the formation of gate in a semiconductor device is disclosed. The method for the formation of gate in a semiconductor device, comprising the steps of: forming amorphous silicon and polysilicon over a gate insulating film atop a semiconductor substrate, in due order; implanting impurity ions into the polysilicon and carrying out heat treatment; and forming a layer of a refractory metal over the silicon and carrying out heat treatment, to form polycide. Capable of preventing the degradation which is attributed to the penetration of impurities and thermal instability when forming a P.sup.+ polygate, the method contribute to the improvement in electrical properties.
    Type: Grant
    Filed: November 29, 1995
    Date of Patent: January 27, 1998
    Assignee: LG Semicon Co., Ltd.
    Inventors: Jeong Soo Byun, Hyeong Joon Kim