Abstract: In an embodiment of the disclosed technology, since a host device manages data stored in a storage device on the basis of a zone corresponding to a storage block of the storage device, the load of the storage device may be reduced, and the operation efficiency of the storage device may be increased by the control of the host device. Therefore, it is possible to improve the performance of a computing system including the host device and the storage device.

Abstract: An apparatus for controlling a discharge pressure of a fluid includes: a pump configured to suck the fluid through an inlet or to discharge the sucked fluid through an outlet; a distributor connected to the pump and to an injection nozzle provided by a sensor and configured to distribute the fluid discharged from the pump to the sensor; and a controller. The controller is configured to control the pump to operate selectively in accordance with detection of contamination of the sensor and to control operation of the distributor to be forcibly delayed during operation of the pump such that the fluid distributed to the sensor, when detected as being contaminated, is controlled to reach a selected required discharge pressure of different required discharge pressures selected in accordance with water amount information and a degree of contamination of the sensor.

Abstract: A polishing composition and method for semiconductor processing being applicable to a semiconductor process including a process of polishing a semiconductor wafer including a through-silicon via (TSV), being capable of implementing excellent polishing performance, being capable of minimizing defects such as dishing, erosion, and protrusion, being capable of realizing an evenly polished surface without deviation between films when polishing a surface where a plurality of different films is exposed to the outside, including abrasive grains and at least one additive, and having a value of 1.45 to 1.90 as calculated by Equation 1.

Abstract: A composition for semiconductor processing, includes abrasive particles surface-modified with an amino silane-based compound; a copper erosion inhibitor, including an azole-based compound; a copper surface protectant, including a compound having a betaine group and a salicylic group or a derivative thereof; and a surfactant, including fluorine in a molecule thereof. A surface of the surface-modified abrasive particles comprises an amino silane group.

Abstract: Provided is a polishing composition for a semiconductor process comprising abrasive particles, the abrasive particles containing an amine-based polishing rate improver, and comprising the amine-based polishing rate improver. Provided is a polishing composition for a semiconductor process further comprising an amine-based surface modifier around the surface of the abrasive particles, wherein the sum of the content of an amine group contained in the amine-based polishing rate improver and the content of an amine group contained in the amine-based surface modifier is 0.0185% by weight or more based on the total composition weight. The polishing composition for a semiconductor process may implement the polishing rate and defect prevention performance within a target range in polishing the boron-doped polysilicon layer.

Abstract: The present invention relates to a data concentration unit and an operating method thereof. To this end, the data concentration unit of the present invention includes: a substrate; and a data communication unit for collecting meter reading data of a plurality of customers through communications with power metering communication modems respectively connected to watt-hour meters provided for the plurality of customers, wherein the data communication unit includes at least one wired communication module for performing wired communication with power metering wired communication modems, and at least one wireless communication module for performing wireless communication with power metering wireless communication modems, and the wired communication module and the wireless communication module are inserted and provided into the substrate.

Abstract: A semiconductor process polishing composition, and a polishing method of a substrate applied with a polishing composition are provided. The process provides a polishing composition improved in the polishing rate, selectivity and dispersibility, and provides a manufacturing method of a substrate that is polished by applying such a polishing composition for a semiconductor process.

Abstract: The present invention relates to a data concentration unit and an operating method thereof. To this end, the data concentration unit of the present invention includes: a substrate; and a data communication unit for collecting meter reading data of a plurality of customers through communications with power metering communication modems respectively connected to watt-hour meters provided for the plurality of customers, wherein the data communication unit includes at least one wired communication module for performing wired communication with power metering wired communication modems, and at least one wireless communication module for performing wireless communication with power metering wireless communication modems, and the wired communication module and the wireless communication module are inserted and provided into the substrate.

Abstract: A chemical mechanical polishing slurry composition for polishing a polycrystalline silicon film is presented, comprising: a solvent; a polishing agent; a pH adjuster; and at least one additive selected from the group consisting of a compound represented by Chemical Formula 1 below, a compound represented by Chemical Formula 2 below, and a tautomer thereof. The chemical mechanical polishing slurry composition for polishing a polycrystalline silicon film exhibits a high polishing speed and has various polishing selectivities when employed in a process for polishing a polycrystalline silicon film of a semiconductor wafer, and thus the composition may be effectively used as a composition for a process for polishing a polycrystalline silicon surface for the formation of highly integrated multilayer structured devices.

Abstract: A chemical-mechanical polishing slurry composition, comprising a polishing agent, an amine-based polishing activator, and a roughness adjusting agent, wherein the amine-based polishing activator is a tertiary or quaternary amine, and the roughness adjusting agent is a disaccharide. According to the slurry composition, the roughness of tungsten and silicon oxide films can be modified and the number of particles present on the wafer surface after polishing can be reduces so that defects of the wafer can be prevented.

Abstract: A chemical-mechanical polishing slurry composition, comprising a polishing agent, an amine-based polishing activator, and a roughness adjusting agent, wherein the amine-based polishing activator is a tertiary or quaternary amine, and the roughness adjusting agent is a disaccharide. According to the slurry composition, the roughness of tungsten and silicon oxide films can be modified and the number of particles present on the wafer surface after polishing can be reduces so that defects of the wafer can be prevented.

Abstract: A chemical mechanical polishing slurry composition for polishing a polycrystalline silicon film is presented, comprising: a solvent; a polishing agent; a pH adjuster; and at least one additive selected from the group consisting of a compound represented by Chemical Formula 1 below, a compound represented by Chemical Formula 2 below, and a tautomer thereof. The chemical mechanical polishing slurry composition for polishing a polycrystalline silicon film exhibits a high polishing speed and has various polishing selectivities when employed in a process for polishing a polycrystalline silicon film of a semiconductor wafer, and thus the composition may be effectively used as a composition for a process for polishing a polycrystalline silicon surface for the formation of highly integrated multilayer structured devices.

Abstract: Disclosed are an editing apparatus and a method in a vide tape duplicating system for effectively editing using an automatic search function of the starting and ending points of a program to be edited. The editing apparatus includes a key input, an edit adjuster, a playback system, a recording system, a display and a system controller. The edit adjuster controls the editing operation to allow a playback signal within a preset editing section output from the playback system to be recorded on the recording system in accordance with the output signal of the key input. The editing method is performed by a first editing step of setting starting and ending points for at least one editing sections on a recording medium in the playback driver, and controlling the editing operation by the detection of the starting and ending points marking information on the editing section which is randomly set from points between the initial point and the final point of the recording medium.