Abstract: A light emitting device package includes a body having a cavity, at least one insulating layer disposed on the body, first and second electrode layers disposed on the insulating layer and electrically isolated from each other, at least one light emitting device disposed on a bottom surface of the cavity and electrically connected to the first and second electrode layer, a light-transmissive resin layer sealing the light emitting device disposed in the cavity, and a metal layer disposed on a rear surface of the body to face the light emitting device, wherein the light emitting device is grown in an m-direction on the (1123) plane of a substrate and includes a light emitting structure including a first conductive semiconductor layer, and active layer, and a second conductive semiconductor layer.

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a substrate, a light emitting structure on the substrate, the light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers; a first electrode on the light emitting structure; and a patterned phosphor layer on the light emitting structure, wherein the patterned phosphor layer converts light generated from the light emitting structure into light having a wavelength longer than that of the light generated from the light emitting structure, and wherein the pattern of the phosphor layer exposes the first electrode.

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a substrate, a light emitting structure on the substrate, the light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers; a first electrode on the light emitting structure; and a patterned phosphor layer on the light emitting structure, wherein the patterned phosphor layer converts light generated from the light emitting structure into light having a wavelength longer than that of the light generated from the light emitting structure, and wherein the pattern of the phosphor layer exposes the first electrode.