Abstract: Disclosed is a method of processing a substrate. The method may include: a substrate loading operation of loading a substrate into a treating space of a chamber; a film removal operation of removing a film provided on the substrate; a protective film formation operation of forming a protective film containing oxygen on the substrate; and a substrate unloading operation of unloading the substrate from the treating space.

Abstract: Disclosed herein is a method of detecting an arc generated in a semiconductor device. The method may comprise: performing a processing process for a substrate processing and collecting data according to the processing process; separating the collected data by setting sections; obtaining an average value and a standard deviation of the data separated for each section; and setting an upper limit and a lower limit for detecting the arc using the average value and the standard deviation.

Abstract: The present invention provides a support unit included in an apparatus for treating a substrate by using plasma. The support unit may include: a chuck configured to support a lower surface of the substrate; a moving plate provided to surround the chuck when viewed from above; and a lifting member configured to change an exposed area of an edge region of the substrate supported by the chuck for the treating space by relatively moving the moving plate in an upper or lower direction with respect to the chuck.