Patents by Inventor Hyeong-soo Park
Hyeong-soo Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250218749Abstract: The present invention provides an apparatus of processing a substrate. The apparatus of processing a substrate includes: a chamber providing a treatment space; a substrate supporting unit provided in the treatment space; a gas supply unit introducing gas into the treatment space; a plasma source providing energy that excites the gas introduced in the treatment space using plasma; an exhaust unit exhausting an atmosphere in the treatment space out of the treatment space; and a laser emission unit disposed above the supporting unit and emitting a laser beam to a substrate placed on the supporting unit, wherein the laser emission unit includes: a laser source generating the laser beam; and a Digital Micro-mirror Device (DMD) unit that is a light modulation unit modulating the laser beam generated from the laser source, wherein the DMD unit includes: micromirrors provided to be rotatable; and a board substrate on which the micromirrors are installed.Type: ApplicationFiled: December 26, 2024Publication date: July 3, 2025Applicant: SEMES CO., LTD.Inventors: Ki Hoon CHOI, Hyeong Soo PARK, Seung Un OH, Jin Yeong SUNG, Seryeyohan CHO, Sang Hyeon RYU, Dong Geun LEE, Tae Shin KIM, Young Dae CHUNG
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Publication number: 20250214172Abstract: The present invention provides a substrate processing apparatus. The substrate processing apparatus includes: a supporting unit supporting a substrate; a laser emission assembly emitting a laser to the substrate, wherein the laser emission assembly includes: a laser source generating a laser; and a plurality of laser emission modules, the laser emission modules each include: a light modulation unit modulating distribution of a laser generated by the laser source; and an imaging unit adjusting and emitting the laser modulated by the light modulation unit to the substrate to correspond to an area to which the laser is emitted, an entire region that needs to be heated on the substrate is composed of a plurality of unit emission regions, and the plurality of laser emission modules are arranged to be able to emit the laser respectively to the different unit emission regions of the substrate supported on the supporting unit.Type: ApplicationFiled: December 26, 2024Publication date: July 3, 2025Applicant: SEMES CO., LTD.Inventors: Young Dae CHUNG, Tae Shin KIM, Seryeyohan CHO, Hyeong Soo PARK, Ki Hoon CHOI
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Publication number: 20250135508Abstract: Disclosed is an apparatus for treating a substrate, the apparatus including: a spin chuck for supporting a substrate and rotatable; a nozzle unit for supplying a cleaning solution and drying gas onto the substrate supported by the spin chuck; and a controller for controlling the nozzle unit, in which the nozzle unit includes: a head; a plurality of cleaning nozzles provided on the head and for discharging the cleaning solution; a plurality of drying nozzles provided on the head and for discharging the drying gas; and a driver for moving the head from a first position to a second position, when the head is in the second position, an impact point of the cleaning solution discharged from the plurality of cleaning nozzles onto the substrate is at a location farther from a center of the substrate than an impact point of the cleaning solution when the head is in the first position, the cleaning solution is discharged simultaneously from the plurality of cleaning nozzles, the impact points of the cleaning solution aType: ApplicationFiled: October 25, 2024Publication date: May 1, 2025Applicant: SEMES CO., LTD.Inventors: Jin Kyu KIM, Hyeong Soo PARK, Gu Won SEON
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Publication number: 20250140576Abstract: Disclosed is a method of processing a substrate, the method including: a coating operation of supplying a coating liquid containing a volatile component to a top surface of the substrate to form a cleaning film; and a cleaning film processing operation of processing the cleaning film, in which the cleaning film processing operation includes: a crack formation operation of generating a crack in the cleaning film formed on the substrate to form film flakes; and a delamination operation of delaminating the film flakes from the top surface of the substrate by volatilizing the volatile component contained in the film flake.Type: ApplicationFiled: October 21, 2024Publication date: May 1, 2025Applicant: SEMES CO., LTD.Inventors: Jun Hee CHOI, Tae Keun KIM, Kang Sul KIM, Kyeong Min LEE, Yong Jun KIM, Hyeong Soo PARK
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Patent number: 8821641Abstract: Provided is a substrate treatment apparatus. The substrate treatment apparatus includes a process chamber, a support unit disposed within the process chamber to support a substrate, and a nozzle unit disposed within the process chamber to spray gas. The nozzle unit includes a first nozzle spraying process gas, and a second nozzle spraying blocking gas onto an inner wall of the process chamber or an area adjacent to the support unit to prevent the process gas from being deposited on the inner wall of the process chamber or the support unit.Type: GrantFiled: September 7, 2012Date of Patent: September 2, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Sang Gon Lee, Hyeong Soo Park
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Publication number: 20130084391Abstract: Provided is a substrate treatment apparatus. The substrate treatment apparatus includes a process chamber, a support unit disposed within the process chamber to support a substrate, and a nozzle unit disposed within the process chamber to spray gas. The nozzle unit includes a first nozzle spraying process gas, and a second nozzle spraying blocking gas onto an inner wall of the process chamber or an area adjacent to the support unit to prevent the process gas from being deposited on the inner wall of the process chamber or the support unit.Type: ApplicationFiled: September 7, 2012Publication date: April 4, 2013Applicant: SEMES CO., LTD.Inventors: Sang Gon LEE, Hyeong Soo PARK
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Publication number: 20120100292Abstract: Provided are a gas injection unit and apparatus and method for depositing a thin layer using the same. The gas injection unit includes: an inner pipe through which a reaction gas is introduced; an outer pipe enclosing the inner pipe, through which a cooling fluid cooling the reaction gas in the inner pipe flows; and injection pipes injecting the reaction gas in the inner pipe to an outside of the outer pipe.Type: ApplicationFiled: September 6, 2010Publication date: April 26, 2012Applicant: SEMES CO., LTD.Inventor: Hyeong Soo Park
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Patent number: 7929291Abstract: A cradle for a portable terminal is provided. The cradle includes a base, an inclined support installed on the base, and a connector. The inclined support supports the portable terminal when the portable terminal is mounted in the cradle. The connector has a protruding portion that protrudes toward one surface of the inclined support, and the connector contacts an interface connector of the portable terminal when the portable terminal is mounted in the cradle. The connector pivots on the inclined support.Type: GrantFiled: October 29, 2008Date of Patent: April 19, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Hyeong-Soo Park, Chang-Heum Byun
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Publication number: 20100015739Abstract: In the semiconductor light emitting device manufacturing method, a surface of a substrate, on which the semiconductor light emitting device is to be manufactured, is etched, thus forming a plurality of deep trenches. Semiconductor films are sequentially grown on the surface of the substrate in which the deep trenches are formed. The deep trenches are formed to have predetermined depth, so that, even if the semiconductor films are grown on the surface of the substrate, voids are formed in regions of the substrate in which the trenches are formed, and the voids are used as reflectors for light generated by the semiconductor light emitting device.Type: ApplicationFiled: June 26, 2006Publication date: January 21, 2010Applicant: EPIPLUS CO., LTD.Inventor: Hyeong-Soo Park
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Publication number: 20090129010Abstract: A cradle for a portable terminal is provided. The cradle includes a base, an inclined support installed on the base, and a connector. The inclined support supports the portable terminal when the portable terminal is mounted in the cradle. The connector has a protruding portion that protrudes toward one surface of the inclined support, and the connector contacts an interface connector of the portable terminal when the portable terminal is mounted in the cradle. The connector pivots on the inclined support.Type: ApplicationFiled: October 29, 2008Publication date: May 21, 2009Applicant: Samsung Electronics Co., Ltd.Inventors: Hyeong-Soo PARK, Chang-Heum Byun
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Patent number: 6555167Abstract: A method for growing a group-III nitride compound (including BN, AlN, GaN and InN) semiconductor film, to which much attention is currently paid in the field of optical semiconductors. If the internal pressure of a reactor increases, vertical growth becomes faster, and internal crystal defects are reduced while many fine pits are generated in view of outer appearance. If the internal pressure of a reactor decreases, vertical growth becomes slower and lateral growth becomes relatively faster, producing fewer pits in view of outer appearance, while internal crystal defects increase. Based on such experimental results, nitride crystals having many fine pits and fewer internal defects are first grown by a high pressure growth method and the fine pits relatively increased in number are then filled by a low pressure growth method, thereby attaining a high quality group-III nitride film.Type: GrantFiled: June 18, 2001Date of Patent: April 29, 2003Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Cheol-soo Sone, Ok-hyun Nam, Hyeong-soo Park
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Publication number: 20020192373Abstract: A method for growing a group-III nitride compound (including BN, AlN, GaN and InN) semiconductor film, to which much attention is currently paid in the field of optical semiconductors. If the internal pressure of a reactor increases, vertical growth becomes faster, and internal crystal defects are reduced while many fine pits are generated in view of outer appearance. If the internal pressure of a reactor decreases, vertical growth becomes slower and lateral growth becomes relatively faster, producing fewer pits in view of outer appearance, while internal crystal defects increase. Based on such experimental results, nitride crystals having many fine pits and fewer internal defects are first grown by a high pressure growth method and the fine pits relatively increased in number are then filled by a low pressure growth method, thereby attaining a high quality group-III nitride film.Type: ApplicationFiled: June 18, 2001Publication date: December 19, 2002Inventors: Cheol-soo Sone, Ok-hyun Nam, Hyeong-soo Park