Patents by Inventor Hyeong-Won Seo

Hyeong-Won Seo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240167980
    Abstract: Proposed is an apparatus for measuring capsaicin in chili peppers. More particularly, proposed are an apparatus and a method for measuring capsaicin in chili peppers, the apparatus and the method being capable of measuring the capsaicin content of chili peppers simply and precisely. The apparatus includes: a first electrochemical measuring cell and a second electrochemical measuring cell into each of which a capsaicin extract is injected; a multiplexer electrically connected to a selected one of the first and second electrochemical measuring cells; a potentiostat applying voltage to the first or second electrochemical measuring cell and measuring an oxidation current value; and a controller controlling the potentiostat and the multiplexer to sequentially electrically connect the potentiostat to each of the first and second electrochemical measuring cells and measuring a first capsaicin content and a second capsaicin content on the basis of the oxidation current value as a function of applied voltage.
    Type: Application
    Filed: March 4, 2022
    Publication date: May 23, 2024
    Inventors: Hyeong Won SEO, Chang Woo KIM, Myoung Sun SHIN, Gyeong Sook BANG, Ki Wan KIM, Pan Su JANG, Woo Hyeung CHO
  • Patent number: 7701002
    Abstract: A semiconductor device includes an isolation layer disposed in a semiconductor device to define an active region. A gate trench is disposed across the active region and extends to the isolation layer. An insulated gate electrode fills a portion of the gate trench and covers at least one sidewall of the active region. A portion of the gate electrode, that covers at least one sidewall of the active region, extends under a portion of the gate electrode that crosses the active region. An insulating pattern is disposed on the gate electrode.
    Type: Grant
    Filed: December 8, 2006
    Date of Patent: April 20, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyeong-Won Seo, Jae-Man Yoon, Kang-Yoon Lee, Young-Woong Son