Abstract: A selective thin film formation method, comprising forming a structure on a substrate in which a first material film including silicon atoms and oxygen atoms and a second material film different from the first material film are exposed, selectively forming an inhibitor liner only on an exposed surface of the first material film among the first material film and the second material film by applying a compound represented by XmSi(NR1R2)n or (XaR3)mSi(NR1R2)n to the structure, and selectively forming a third material film only on the exposed surface of the second material film among the first material film and the second material film. X is a halogen atom, R1, R2, and R3 are each independently an alkyl group, an alkenyl group, an allyl group, or a heterocyclic group, a, m, and n are each independently an integer of 1 to 3, and m+n=4.