Abstract: The present disclosure relates to a network polymer and a manufacturing method thereof. An object of one aspect of the present invention is to provide a network polymer that can recover and recycle a key monomer from a polymer with excellent decomposability and is formed therefrom to have excellent mechanical and electrical properties, and a method of manufacturing the same. The network polymer according to one embodiment of the present invention is recycled from a polymer with excellent decomposability and thus is eco-friendly, and exhibits the effect of having excellent mechanical and electrical properties.

Abstract: A short wavelength infrared up-conversion device of one embodiment includes a first electrode connected to an anode, an OLED layer stacked on the first electrode and up-converting short-wavelength infrared ray incident through the first electrode into visible light, a blocking layer located between the first electrode and an infrared-sensitive thin film layer to prevent hole injection into the infrared-sensitive thin film layer, an infrared-sensitive thin film layer located between the blocking layer and the OLED layer, and injecting holes into the OLED layer from electron-hole pairs created by absorbing the short-wavelength infrared ray incident through the first electrode, and a transparent second electrode stacked on the OLED layer and connected to a cathode, wherein the first electrode includes a transparent electrode unit, and a reflective electrode unit that reflects visible light incident from the OLED layer to the first electrode toward the second electrode.

Abstract: Provided is a see-through thin film solar cell module including a transparent substrate, a first back electrode deposited on a first surface of the transparent substrate, a second back electrode deposited on the first back electrode and including a MoSe2 layer, an absorber layer deposited on the second back electrode and including selenium (Se) or sulfur (S), and a laser scribing pattern formed by partially removing the absorber layer.

Abstract: The present disclosure relates to a ternary photoactive layer composition and an organic solar cell including the same. According to the present disclosure, excessive crystal growth and aggregation can be prevented during large-area coating of a photoactive layer, uniform morphology can be achieved without significant phase separation, an organic solar cell with superior photovoltaic cell characteristics can be realized, and superior performance may be maintained even after long-term exposure to heat by preventing the morphological change of the photoactive layer.

Abstract: Provided is a method of manufacturing a high efficiency flexible thin film solar cell module including a see-thru pattern. The method of manufacturing a flexible thin film solar cell module includes: sequentially forming a light-absorbing layer, a first buffer layer, and a first transparent electrode layer on the release layer; forming a second buffer layer on the exposed bottom surface of the light-absorbing layer; forming a P2 scribing pattern by removing at least one portion of each of the first buffer layer, the light-absorbing layer, and the second buffer layer; forming a second transparent electrode layer on the second buffer layer and the first transparent electrode layer exposed by the P2 scribing pattern; and forming a P4 see-thru pattern by selectively removing at least one portion of the first buffer layer, the light-absorbing layer, the second buffer layer, and the second transparent electrode layer.

Abstract: Provided is a see-through thin film solar cell module including a transparent substrate, a first back electrode deposited on a first surface of the transparent substrate, a second back electrode deposited on the first back electrode and including a MoSe2 layer, an absorber layer deposited on the second back electrode and including selenium (Se) or sulfur (S), and a laser scribing pattern formed by partially removing the absorber layer.

Abstract: Provided is a method of manufacturing a high efficiency flexible thin film solar cell module including a see-thru pattern. The method of manufacturing a flexible thin film solar cell module includes: sequentially forming a light-absorbing layer, a first buffer layer, and a first transparent electrode layer on the release layer; forming a second buffer layer on the exposed bottom surface of the light-absorbing layer; forming a P2 scribing pattern by removing at least one portion of each of the first buffer layer, the light-absorbing layer, and the second buffer layer; forming a second transparent electrode layer on the second buffer layer and the first transparent electrode layer exposed by the P2 scribing pattern; and forming a P4 see-thru pattern by selectively removing at least one portion of the first buffer layer, the light-absorbing layer, the second buffer layer, and the second transparent electrode layer.

Abstract: An ultra-thin thermoelectric element having a thermoelectric effect includes an ultra-thin substrate, a thermal insulator formed on part of the substrate, and a plurality of active layers formed from a thermoelectric material over the substrate and the thermal insulator, wherein each of the plurality of active layers is connected by an electrode, and an electric current flows due to a temperature difference between the substrate and the thermal insulator.

Abstract: A vertical field-effect transistor is provided, comprising a first electrode, a porous conductor layer formed from a layer of conductive material with a plurality of holes extending through the conductive material disposed therein, a dielectric layer between the first electrode and the porous conductor layer, a charge transport layer in contact with the porous conductor layer, and a second electrode electrically connected to the charge transport layer. A photoactive layer may be provided between the dielectric layer and the first electrode. A method of manufacturing a vertical field-effect transistor may also be provided, comprising forming a dielectric layer and depositing a conductor layer in contact with the dielectric layer, wherein one or more regions of the dielectric layer are masked during deposition such that the conductor layer includes a plurality of pores that extend through the conductor layer.

Abstract: A photonic conversion device is provided, comprising a photoactive layer, a dielectric layer, a porous conductor layer, and an electron transport layer in contact with the porous conductor layer. A light emitting device may be in contact with the electron transport layer, forming a conversion device with gain. A method of manufacturing a photonic conversion device may also be provided, comprising forming a photoactive layer, forming a dielectric layer over the photoactive layer, and depositing a conductor layer in contact with the dielectric layer, wherein one or more regions of the dielectric layer are masked during deposition such that the conductor layer includes a plurality of pores that extend through the conductor layer.

Abstract: A photonic conversion device is provided, comprising a photoactive layer, a dielectric layer, a porous conductor layer, and an electron transport layer in contact with the porous conductor layer. A light emitting device may be in contact with the electron transport layer, forming a conversion device with gain. A method of manufacturing a photonic conversion device may also be provided, comprising forming a photoactive layer, forming a dielectric layer over the photoactive layer, and depositing a conductor layer in contact with the dielectric layer, wherein one or more regions of the dielectric layer are masked during deposition such that the conductor layer includes a plurality of pores that extend through the conductor layer.

Abstract: A vertical field-effect transistor is provided, comprising a first electrode, a porous conductor layer formed from a layer of conductive material with a plurality of holes extending through the conductive material disposed therein, a dielectric layer between the first electrode and the porous conductor layer, a charge transport layer in contact with the porous conductor layer, and a second electrode electrically connected to the charge transport layer. A photoactive layer may be provided between the dielectric layer and the first electrode. A method of manufacturing a vertical field-effect transistor may also be provided, comprising forming a dielectric layer and depositing a conductor layer in contact with the dielectric layer, wherein one or more regions of the dielectric layer are masked during deposition such that the conductor layer includes a plurality of pores that extend through the conductor layer.