Abstract: A compound represented by Chemical Formula 1 is provided. The compound has a reorganization energy of less than about 0.191 eV and a maximum absorption wavelength value calculated by density functional theory (DFT) of less than or equal to about 500 nm. In Chemical Formula 1, the definition of each group is as described in the specification.

Abstract: A compound is represented by Chemical Formula 1, and at least one of X1 and X2 is a substituent having a volume ranging from about 900 bohr3 to about 3000 bohr3 (V/molecule), and a photoelectric device, an image sensor, and an electronic device includes the compound: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Abstract: Provided is a compound represented by any one of Chemical Formulas 1 to 3, and having a molecular packing density of greater than or equal to about 1.55 molecules/nm3 and photoelectric devices, light absorption sensors, sensor-embedded display panels, and electronic devices including the same. In Chemical Formulas 1 to 3, the definition of each substituent is as described in the specification.

Abstract: Provided is a compound represented by Chemical Formula 1 and having a reorganization energy of the compound of less than about 0.163 eV and a maximum absorption wavelength value calculated by density functional theory (DFT) of less than or equal to about 495 nm, and photoelectric devices, light absorption sensors, sensor-embedded display panels, and electronic devices including the same. In Chemical Formula 1, the definition of each substituent is as described in the specification.

Abstract: Provided are a compound represented by Chemical Formula 1A or 1B and a photoelectric device, a light absorption sensor, a sensor-embedded display panel, and an electronic device including the same. Details for Chemical Formulas 1A and 1B are as described in the detailed description.

Abstract: Provided are a photoelectric device, a light absorption sensor, a sensor-embedded display panel, and an electronic device. The photoelectric device includes a first electrode and a second electrode facing each other, and a light absorbing layer between the first electrode and the second electrode, wherein the light absorbing layer is configured to absorb light of a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, an infrared wavelength spectrum, or any combination thereof, the light absorbing layer includes a p-type semiconductor and an n-type semiconductor, and the n-type semiconductor includes a compound represented by Chemical Formula 1. Details for Chemical Formula 1 are as described in the detailed description.

Abstract: A sensor-embedded display panel includes a light emitting element and a sensor which include separate portions of a first common auxiliary layer including a hole transport material and a second common auxiliary layer including an electron transport material. The sensor includes first and second semiconductor layers proximate to the first and second common auxiliary layers, respectively, and including a p-type semiconductor and a non-fullerene n-type semiconductor having a LUMO energy level deeper than that of the electron transport material, respectively. An insertion layer between the second semiconductor layer and the second common auxiliary layer includes a metal, a metal compound, or any combination thereof. A work function of the metal or a LUMO energy level of the metal compound is deeper or shallower than the LUMO energy level of the non-fullerene n-type semiconductor and the LUMO energy level of the electron transport material within less than about 1.3 eV, respectively.

Abstract: A sensor may include a reflective electrode, a photoelectric conversion layer on the reflective electrode and including one or more photoelectric conversion materials, a semi-transmissive electrode on the photoelectric conversion layer, a light transmitting buffer layer on the semi-transmissive electrode, and a semi-transmissive auxiliary layer on the light transmitting buffer layer.

Abstract: A display panel may include a light emitting element including a light emitting layer and a sensor including a photosensitive layer on a substrate. The light emitting element and the sensor each may include respective portions of first and second common auxiliary layers, which may be continuous under and over the light emitting layer and the photosensitive layer. The first and second common auxiliary layers respectively may include a hole transport material and an electron transport material. The photosensitive layer may include first and second semiconductor layers close to the first and second common auxiliary layers, respectively. The first and second semiconductor layers respectively may include a p-type semiconductor and an n-type semiconductor. The second semiconductor layer may have an uneven surface facing the second common auxiliary layer and may have an average roughness (Rq) of greater than or equal to about 5 nm.

Abstract: A sensor-embedded display panel includes a light emitting element on a substrate and including a light emitting layer, and a photosensor on the substrate and including a photosensitive layer extending at least partially in parallel with the light emitting layer along an in-plane direction of the substrate. The light emitting element and the photosensor include separate, respective portions of each of first and second common auxiliary layers each extending continuously as a single piece of material under and on, respectively, each of the light emitting layer and the photosensitive layer. The photosensitive layer may include a light absorbing semiconductor having a HOMO energy level having a difference of less than about 1.0 eV from a HOMO energy level of the first common auxiliary layer and a LUMO energy level having a difference of less than about 1.0 eV from a LUMO energy level of the second common auxiliary layer.

Abstract: Disclosed are a sensor-embedded display panel and an electronic device including the sensor-embedded display panel. The sensor-embedded panel may include a light emitting element and a photosensor on a substrate. The light emitting element may include a light emitting layer and the photosensor may include a photosensitive layer in parallel with the light emitting layer along an in-plane direction of the substrate. The light emitting element and the photosensor include respective portions of a first common auxiliary layer. The first common auxiliary layer may be continuous along the in-place direction of the substrate and under each of the light emitting layer and the photosensitive layer. The photosensitive layer may include a fluorine-containing p-type semiconductor and a non-fullerene n-type semiconductor. The non-fullerene n-type semiconductor may form a pn junction with the p-type semiconductor.

Abstract: Disclosed are an n-type semiconductor including compound represented by Chemical Formula 1 or Chemical Formula 2, an image sensor, and an electronic device. In Chemical Formula 1 and Chemical Formula 2, each substituent is as defined in the detailed description.

Abstract: Disclosed are an n-type semiconductor including compound represented by Chemical Formula 1 or Chemical Formula 2, an image sensor, and an electronic device. In Chemical Formula 1 and Chemical Formula 2, each substituent is as defined in the detailed description.

Abstract: A sensor embedded display panel includes a substrate, a light emitting element on the substrate and including an emission layer; and a photoelectric element on the substrate. The photoelectric element includes a light absorbing layer. The light absorbing layer at least partially overlaps the emission layer in a horizontal direction extending in parallel to an upper surface of the substrate. The light emitting element and the photoelectric element each include a separate portion of a first common auxiliary layer that extends on tops of the emission layer and the light absorbing layer and a separate portion of a second common auxiliary layer that extends on bottoms of the emission layer and the light absorbing layer. The photoelectric element further includes an auxiliary layer that has a thickness corresponding to one of a red wavelength spectrum, a green wavelength spectrum, or a blue wavelength spectrum.

Abstract: A composition for a photoelectric device includes a p-type semiconductor compound represented by Chemical Formula 1 and an n-type semiconductor compound: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Abstract: A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Abstract: Disclosed are a film and a photoelectric device including the compound of Chemical Formula 1 and configured to selectively absorb light in a blue wavelength region, and an image sensor and electronic device including the same: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Abstract: An image forming apparatus including a user interface device, a communication interface, a processor, and a memory storing instructions executable by the processor is provided. The processor may execute the instructions stored in the memory to, when an additional application that is not a default application basically installed in the image forming apparatus is included in a workform that is to be shared with an external apparatus, the workform being selected via the user interface device, transmit, to the external apparatus via the communication interface, installation file information of the additional application with the workform that is to be shared.

Abstract: Disclosed are an organic device including a first electrode and a second electrode facing each other and an active layer between the first electrode and the second electrode, wherein the active layer includes compound represented by Chemical Formula 1, and an image sensor including the same. In Chemical Formula 1, L1, L2, R1, R2, Ar1, Ar2, X1, X2, m1, m2, n1, and n2 are the same as described in the detailed description.

Abstract: Disclosed are an n-type semiconductor including compound represented by Chemical Formula 1 or Chemical Formula 2, an image sensor, and an electronic device. In Chemical Formula 1 and Chemical Formula 2, each substituent is as defined in the detailed description.