Patents by Inventor Hyeonjong SONG

Hyeonjong SONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12216912
    Abstract: Disclosed herein are operation methods of a memory controller which controls a memory device. The method includes storing write data in a first area of the memory device, extracting first error position information indicating a position of at least one error included in data stored in the first area, storing the first error position information in a second area of the memory device, reading read data from the first area of the memory device, reading the first error position information from the second area of the memory device, refining the read data based on the first error position information to generate refined data, performing soft decision decoding based on the refined data to generate corrected data, and outputting the corrected data.
    Type: Grant
    Filed: August 11, 2022
    Date of Patent: February 4, 2025
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seonghyeog Choi, Dong-Min Shin, Hong Rak Son, Hyeonjong Song, Yeongcheol Jo
  • Patent number: 12067287
    Abstract: Provided are a memory controller calculating an optimal read level, a memory system including the memory controller, and an operating method of the memory controller. The memory controller includes: a processor configured to control a memory operation on the memory device; and a read level calculation module configured to: receive N counting values corresponding to N read levels generated based on a counting operation on data read by using a plurality of read levels, model at least two cell count functions having selected read levels that are selected from the N read levels as inputs, and the N counting values corresponding to the selected read levels as outputs, and calculate an optimal read level based on an optimal cell count function selected from the at least two cell count functions, wherein N is an integer equal to or greater than four, wherein the N counting values include counting values corresponding to at least four different read levels.
    Type: Grant
    Filed: March 2, 2022
    Date of Patent: August 20, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kwanwoo Noh, Hyeonjong Song, Wijik Lee, Hongrak Son, Dongmin Shin, Seonghyeog Choi
  • Patent number: 11961553
    Abstract: A nonvolatile memory device includes a plurality of memory cells that have a first state and a second state different from each other. A method of searching a read voltage of the nonvolatile memory device includes determining a number n that represents a number of times a data read operation is performed, selecting n read voltage levels of the read voltage such that a number of read voltage levels is equal to the number of times the data read operation, where the n read voltage levels differ from each other, generating n cell count values by performing n data read operations on the plurality of memory cells using all of the n read voltage levels, and generating an optimal read voltage level of the read voltage by performing a regression analysis based on a first-order polynomial using the n read voltage levels and the n cell count values.
    Type: Grant
    Filed: May 31, 2022
    Date of Patent: April 16, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Wijik Lee, Kwanwoo Noh, Hyeonjong Song
  • Publication number: 20230119534
    Abstract: A nonvolatile memory device includes a plurality of memory cells that have a first state and a second state different from each other. A method of searching a read voltage of the nonvolatile memory device includes determining a number n that represents a number of times a data read operation is performed, selecting n read voltage levels of the read voltage such that a number of read voltage levels is equal to the number of times the data read operation, where the n read voltage levels differ from each other, generating n cell count values by performing n data read operations on the plurality of memory cells using all of the n read voltage levels, and generating an optimal read voltage level of the read voltage by performing a regression analysis based on a first-order polynomial using the n read voltage levels and the n cell count values.
    Type: Application
    Filed: May 31, 2022
    Publication date: April 20, 2023
    Inventors: WIJIK LEE, KWANWOO NOH, HYEONJONG SONG
  • Publication number: 20230092380
    Abstract: Disclosed herein are operation methods of a memory controller which controls a memory device. The method includes storing write data in a first area of the memory device, extracting first error position information indicating a position of at least one error included in data stored in the first area, storing the first error position information in a second area of the memory device, reading read data from the first area of the memory device, reading the first error position information from the second area of the memory device, refining the read data based on the first error position information to generate refined data, performing soft decision decoding based on the refined data to generate corrected data, and outputting the corrected data.
    Type: Application
    Filed: August 11, 2022
    Publication date: March 23, 2023
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Seonghyeog CHOI, Dong-Min SHIN, Hong Rak SON, Hyeonjong SONG, Yeongcheol JO
  • Publication number: 20230057932
    Abstract: Provided are a memory controller calculating an optimal read level, a memory system including the memory controller, and an operating method of the memory controller. The memory controller includes: a processor configured to control a memory operation on the memory device; and a read level calculation module configured to: receive N counting values corresponding to N read levels generated based on a counting operation on data read by using a plurality of read levels, model at least two cell count functions having selected read levels that are selected from the N read levels as inputs, and the N counting values corresponding to the selected read levels as outputs, and calculate an optimal read level based on an optimal cell count function selected from the at least two cell count functions, wherein N is an integer equal to or greater than four, wherein the N counting values include counting values corresponding to at least four different read levels.
    Type: Application
    Filed: March 2, 2022
    Publication date: February 23, 2023
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kwanwoo NOH, Hyeonjong SONG, Wijik LEE, Hongrak SON, Dongmin SHIN, Seonghyeog CHOI
  • Patent number: 11456048
    Abstract: In a method of predicting a remaining lifetime of the nonvolatile memory device, a read sequence is performed. The read sequence includes a plurality of read operations, and at least one of the plurality of read operations is sequentially performed until read data stored in the nonvolatile memory device is successfully retrieved. Sequence class and error correction code (ECC) decoding information are generated. A life stage of the nonvolatile memory device is determined based on at least one of the sequence class and the ECC decoding information. When it is determined that the nonvolatile memory device corresponds to a first life stage, a coarse prediction on the remaining lifetime of the nonvolatile memory device is performed. When it is determined that the nonvolatile memory device corresponds to a second life stage after the first life stage, a fine prediction on the remaining lifetime of the nonvolatile memory device is performed.
    Type: Grant
    Filed: August 3, 2021
    Date of Patent: September 27, 2022
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jongyoon Yoon, Hyeonjong Song, Seonghyeog Choi, Hongrak Son
  • Publication number: 20220199185
    Abstract: In a method of predicting a remaining lifetime of the nonvolatile memory device, a read sequence is performed. The read sequence includes a plurality of read operations, and at least one of the plurality of read operations is sequentially performed until read data stored in the nonvolatile memory device is successfully retrieved. Sequence class and error correction code (ECC) decoding information are generated. A life stage of the nonvolatile memory device is determined based on at least one of the sequence class and the ECC decoding information. When it is determined that the nonvolatile memory device corresponds to a first life stage, a coarse prediction on the remaining lifetime of the nonvolatile memory device is performed. When it is determined that the nonvolatile memory device corresponds to a second life stage after the first life stage, a fine prediction on the remaining lifetime of the nonvolatile memory device is performed.
    Type: Application
    Filed: August 3, 2021
    Publication date: June 23, 2022
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jongyoon YOON, Hyeonjong SONG, Seonghyeog CHOI, Hongrak SON