Abstract: The present invention relates to a composition for preventing or treating transplantation rejection or a transplantation rejection disease, comprising a novel compound and a calcineurin inhibitor. A co-administration of the present invention 1) reduces the activity of pathogenic Th1 cells or Th17 cells, 2) increases the activity of Treg cells, 3) has an inhibitory effect against side effects, such as tissue damage, occurring in the sole administration thereof, 4) inhibits various pathogenic pathways, 5) inhibits the cell death of inflammatory cells, and 6) increases the activity of mitochondria, in an in vivo or in vitro allogenic model, a transplantation rejection disease model, a skin transplantation model, and a liver-transplanted patient, and thus inhibits transplantation rejection along with mitigating side effects possibly occurring in the administration of a conventional immunosuppressant alone.

Abstract: A magnetic memory device includes a pinned layer, a free layer, a tunnel barrier layer between the pinned layer and the free layer, a first oxide layer spaced apart from the tunnel barrier layer with the free layer therebetween, and a second oxide layer spaced apart from the free layer with the first oxide layer therebetween. The first oxide layer includes an oxide of a first material and may have a thickness of 0.3 ? to 2.0 ?. The second oxide layer may include an oxide of a second material and may have a thickness of 0.1 ? to 5.0 ?. A first oxygen affinity of the first material may be greater than a second oxygen affinity of the second material.

Abstract: A sputtering apparatus including a chamber, a stage inside the chamber and configured to receive a substrate thereon, a first sputter gun configured to provide a sputtering source to an inside of the chamber, a first RF source configured to provide a first power having a first frequency to the first sputter gun, and a second RF source configured to provide a second power having a second frequency to the first sputter gun, the second frequency being lower than the first frequency may be provided.

Abstract: A sputtering apparatus including a chamber, a stage inside the chamber and configured to receive a substrate thereon, a first sputter gun configured to provide a sputtering source to an inside of the chamber, a first RF source configured to provide a first power having a first frequency to the first sputter gun, and a second RF source configured to provide a second power having a second frequency to the first sputter gun, the second frequency being lower than the first frequency may be provided.

Abstract: A sputtering apparatus including a chamber, a stage inside the chamber and configured to receive a substrate thereon, a first sputter gun configured to provide a sputtering source to an inside of the chamber, a first RF source configured to provide a first power having a first frequency to the first sputter gun, and a second RF source configured to provide a second power having a second frequency to the first sputter gun, the second frequency being lower than the first frequency may be provided.

Abstract: A magnetic memory device includes a pinned layer, a free layer, a tunnel barrier layer between the pinned layer and the free layer, a first oxide layer spaced apart from the tunnel barrier layer with the free layer therebetween, and a second oxide layer spaced apart from the free layer with the first oxide layer therebetween. The first oxide layer includes an oxide of a first material and may have a thickness of 0.3 ? to 2.0 ?. The second oxide layer may include an oxide of a second material and may have a thickness of 0.1 ? to 5.0 ?. A first oxygen affinity of the first material may be greater than a second oxygen affinity of the second material.

Abstract: A sputtering apparatus including a chamber, a stage inside the chamber and configured to receive a substrate thereon, a first sputter gun configured to provide a sputtering source to an inside of the chamber, a first RF source configured to provide a first power having a first frequency to the first sputter gun, and a second RF source configured to provide a second power having a second frequency to the first sputter gun, the second frequency being lower than the first frequency may be provided.

Abstract: The present invention provides a looseness-prevention screw thread structure including a screw thread having a predetermined pitch, a no-load flank which is an inclined surface in a direction in which the screw thread is advanced, and a load flank which is an inclined surface in a direction in which the screw thread is retracted, the no-load flank and the load flank being formed at both sides of the screw thread, in which the no-load flank of the screw thread includes: a first tangential portion which abuts against an arc portion formed at a thread crest of an opposing fastening object; and a second tangential portion which has a preset angle with respect to the first tangential portion and abuts against the arc portion.

Abstract: The present invention provides a looseness-prevention screw thread structure including a screw thread having a predetermined pitch, a no-load flank which is an inclined surface in a direction in which the screw thread is advanced, and a load flank which is an inclined surface in a direction in which the screw thread is retracted, the no-load flank and the load flank being formed at both sides of the screw thread, in which the no-load flank of the screw thread includes: a first tangential portion which abuts against an arc portion formed at a thread crest of an opposing fastening object; and a second tangential portion which has a preset angle with respect to the first tangential portion and abuts against the arc portion.