Patents by Inventor Hyeran Byun
Hyeran Byun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230410477Abstract: A method of segmenting objects in an image using artificial intelligence includes obtaining, by an analysis device, an image containing at least one object; inputting the image acquired by the analysis device into a segmentation model; and segmenting, by the analysis device, objects in the acquired image based on values output by the segmentation model, wherein an image containing at least one object is used as learning data, the size of objects in the learning data is estimated as part of the learning process, different weightings are given to pixels of which the objects consist according to the estimated size of the objects, and the segmentation model is trained based on a loss function in which the given weightings are considered, a size-weighted loss function.Type: ApplicationFiled: December 20, 2022Publication date: December 21, 2023Applicant: University Industry Foundation, Yonsei UniversityInventors: Hyeran Byun, Sanghuk Lee, Cheolhyun Mun, Jewook Lee, Pilhyeon Lee
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Patent number: 11746411Abstract: The present invention relates to a method for forming a thin film, and more particularly, to a method for forming a thin film comprising steps of: i) adsorbing a growth inhibitor for forming a thin film on a surface of a substrate, the growth inhibitor for forming a thin film being represented by Chemical Formula 1 below; and ii) adsorbing a Ti-based thin film precursor on a surface of a substrate on which the growth inhibitor is adsorbed. AnBmXo??[Chemical Formula 1] wherein A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer of 1 to 15, o is an integer of 1 or more, and m is 0 to 2n+1. According to the present invention, it is possible to suppress side reactions to appropriately lower a thin film growth rate and remove process byproducts in the thin film, thereby preventing corrosion or deterioration and greatly improving step coverage and thickness uniformity of a thin film, even when the thin film is formed on a substrate having a complex structure.Type: GrantFiled: January 6, 2020Date of Patent: September 5, 2023Inventors: Changbong Yeon, Jaesun Jung, Hyeran Byun, Taeho Song, Sojung Kim, Seokjong Lee
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Publication number: 20220293423Abstract: The present invention relates to a method for forming a thin film, and more particularly, to a method for forming a thin film comprising steps of: i) absorbing a growth inhibitor for forming a thin film on a surface of a substrate, the growth inhibitor for forming a thin film being represented by Chemical Formula 1 below; and ii) adsorbing a Ti-based thin film precursor on a surface of a substrate on which the growth inhibitor is adsorbed. AnBmXo??[Chemical Formula 1] wherein A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer of 1 to 15, o is an integer of 1 or more, and m is 0 to 2n+1. According to the present invention, it is possible to suppress side reactions to appropriately lower a thin film growth rate and remove process byproducts in the thin film, thereby preventing corrosion or deterioration and greatly improving step coverage and thickness uniformity of a thin film, even when the thin film is formed on a substrate having a complex structure.Type: ApplicationFiled: May 31, 2022Publication date: September 15, 2022Inventors: Changbong Yeon, Jaesun Jung, Hyeran Byun, Taeho Song, Sojung Kim, Seokjong Lee
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Publication number: 20220275511Abstract: The present invention relates to a method for forming a thin film, and more particularly, to a method for forming a thin film comprising steps of: i) adsorbing a growth inhibitor for forming a thin film on a surface of a substrate; and ii) adsorbing a metal film precursor, metal oxide film precursor, metal nitride film precursor or silicon nitride film precursor on a surface of a substrate on which the growth inhibitor is adsorbed, wherein the growth inhibitor for forming a thin film is represented by Chemical Formula 1 below, and the metal is at least one selected from a group consisting of tungsten, cobalt, chrome, aluminum, hafnium, vanadium, niobium, germanium, lanthanide, actinoids, gallium, tantalum, zirconium, ruthenium, copper, titanium, is nickel, iridium and molybdenum. AnBmXo??[Chemical Formula 1] wherein A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer of 1 to 15, o is an integer of 1 or more, and m is 0 to 2n+1.Type: ApplicationFiled: May 20, 2022Publication date: September 1, 2022Inventors: Changbong Yeon, Jaesun Jung, Hyeran Byun, Taeho Song, Sojung Kim, Seokjong Lee
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Publication number: 20220049352Abstract: The present invention relates to a growth inhibitor for forming a thin film, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom, and more particularly, to a growth inhibitor for forming a thin film represented by Chemical Formula 1 below, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom. AnBmXo??[Chemical Formula 1] wherein A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer from 1 to 15, o is an integer of 1 or more, and m is from 0 to 2n+1. According to present invention, it is possible to suppress side reactions to appropriately lower a thin film growth rate and remove process byproducts in the thin film, thereby preventing corrosion or deterioration and greatly improving step coverage and thickness uniformity of a thin film even when the thin film is formed on a substrate having a complicated structure.Type: ApplicationFiled: October 28, 2021Publication date: February 17, 2022Inventors: Changbong Yeon, Jaesun Jung, Hyeran Byun, Taeho Song, Sojung Kim, Seokjong Lee
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Publication number: 20220049351Abstract: The present invention relates to a growth inhibitor for forming a thin film, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom, and more particularly, to a growth inhibitor for forming a thin film represented by Chemical Formula 1 below, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom. AnBmXo??[Chemical Formula 1] wherein A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer from 1 to 15, o is an integer of 1 or more, and m is from 0 to 2n+1. According to present invention, it is possible to suppress side reactions to appropriately lower a thin film growth rate and remove process byproducts in the thin film, thereby preventing corrosion or deterioration and greatly improving step coverage and thickness uniformity of a thin film even when the thin film is formed on a substrate having a complicated structure.Type: ApplicationFiled: October 28, 2021Publication date: February 17, 2022Inventors: Changbong Yeon, Jaesun Jung, Hyeran Byun, Taeho Song, Sojung Kim, Seokjong Lee
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Publication number: 20210090892Abstract: The present invention relates to a method for forming a thin film, and more particularly, to a method for forming a thin film comprising steps of: i) adsorbing a growth inhibitor for forming a thin film on a surface of a substrate, the growth inhibitor for forming a thin film being represented by Chemical Formula 1 below; and ii) adsorbing a Ti-based thin film precursor on a surface of a substrate on which the growth inhibitor is adsorbed. AnBmXo??[Chemical Formula 1] wherein A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer of 1 to 15, o is an integer of 1 or more, and m is 0 to 2n+1. According to the present invention, it is possible to suppress side reactions to appropriately lower a thin film growth rate and remove process byproducts in the thin film, thereby preventing corrosion or deterioration and greatly improving step coverage and thickness uniformity of a thin film, even when the thin film is formed on a substrate having a complex structure.Type: ApplicationFiled: January 6, 2020Publication date: March 25, 2021Inventors: Changbong Yeon, Jaesun Jung, Hyeran Byun, Taeho Song, Sojung Kim, Seokjong Lee
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Publication number: 20210087683Abstract: The present invention relates to a method for forming a thin film, and more particularly, to a method for forming a thin film comprising steps of: i) adsorbing a growth inhibitor for forming a thin film on a surface of a substrate; and ii) adsorbing a metal film precursor, metal oxide film precursor, metal nitride film precursor or silicon nitride film precursor on a surface of a substrate on which the growth inhibitor is adsorbed, wherein the growth inhibitor for forming a thin film is represented by Chemical Formula 1 below, and the metal is at least one selected from a group consisting of tungsten, cobalt, chrome, aluminum, hafnium, vanadium, niobium, germanium, lanthanide, actinoids, gallium, tantalum, zirconium, ruthenium, copper, titanium, nickel, iridium and molybdenum. AnBmXo??[Chemical Formula 1] wherein A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer of 1 to 15, o is an integer of 1 or more, and m is 0 to 2n+1.Type: ApplicationFiled: January 6, 2020Publication date: March 25, 2021Inventors: Changbong Yeon, Jaesun Jung, Hyeran Byun, Taeho Song, Sojung Kim, Seokjong Lee
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Publication number: 20210062338Abstract: The present invention relates to a growth inhibitor for forming a thin film, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom, and more particularly, to a growth inhibitor for forming a thin film represented by Chemical Formula 1 below, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom. AnBmXo??[Chemical Formula 1] wherein A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer from 1 to 15, o is an integer of 1 or more, and m is from 0 to 2n+1. According to present invention, it is possible to suppress side reactions to appropriately lower a thin film growth rate and remove process byproducts in the thin film, thereby preventing corrosion or deterioration and greatly improving step coverage and thickness uniformity of a thin film even when the thin film is formed on a substrate having a complicated structure.Type: ApplicationFiled: January 6, 2020Publication date: March 4, 2021Inventors: Changbong Yeon, Jaesun Jung, Hyeran Byun, Taeho Song, Sojung Kim, Seokjong Lee
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Patent number: 7092555Abstract: A system for performing face registration and authentication using face information, and a method thereof. A set of readily distinguishable features for each user is selected at a registration step and only the set of features selected at the registration step is used at a face authentication step, whereby memory use according to unnecessary information and amount of data calculation for face authentication can be reduced. Thus, the present system has an advantage in that identity authentication through face authentication can be performed even under restricted environments of a USB token or smart card with limited resources. The present system further has advantages in that authentication performance is improved, as readily distinguishable feature information is used, and the time for face authentication is reduced, as face authentication is performed using the SVM built by using the optimal set of readily distinguishable features at a training step.Type: GrantFiled: May 20, 2002Date of Patent: August 15, 2006Assignee: Electronics and Telecommunications Research InstituteInventors: Kyunghee Lee, Yongwha Chung, Chee Hang Park, Hyeran Byun
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Publication number: 20030103652Abstract: A system for performing face registration and authentication using face information, and a method thereof. A set of readily distinguishable features for each user is selected at a registration step and only the set of features selected at the registration step is used at a face authentication step, whereby memory use according to unnecessary information and amount of data calculation for face authentication can be reduced. Thus, the present system has an advantage in that identity authentication through face authentication can be performed even under restricted environments of a USB token or smart card with limited resources. The present system further has advantages in that authentication performance is improved, as readily distinguishable feature information is used, and the time for face authentication is reduced, as face authentication is performed using the SVM built by using the optimal set of readily distinguishable features at a training step.Type: ApplicationFiled: May 20, 2002Publication date: June 5, 2003Inventors: Kyunghee Lee, Yongwha Chung, Chee Hang Park, Hyeran Byun