Abstract: Provided are positive type photoresist compositions including a polymer resin, a crosslinking agent, and a photoacid generator, wherein the polymer resin includes a main chain including a linking group decomposable under acidic conditions and a thermally crosslinkable functional group linked to the main chain and the crosslinking agent includes a functional group capable of reacting with the thermally crosslinkable functional group. The photoresist compositions of the present disclosure can be coated multiple times to realize a high-thickness photoresist film.

Abstract: Provided is a method of manufacturing a semiconductor device, the method including forming a via structure through a portion of a substrate; partially removing the substrate to expose a portion of the via structure; forming a protecting layer on the substrate to cover the portion of the via structure exposed by partially removing the substrate, the protecting layer including a photosensitive organic insulating material; curing the protecting layer to form a cured protecting layer; planarizing the cured protecting layer until a part of the via structure is exposed; and forming a pad structure to contact the part of the via structure exposed by planarizing the cured protecting layer.