Abstract: Disclosed is a method of manufacturing a compound semiconductor solar cell including forming a compound semiconductor layer; and forming a defect-removed portion formed of an empty space through removing a portion of the compound semiconductor layer where a defect existed prior to removal. The forming of the defect-removed portion includes forming a mask material layer on the compound semiconductor layer; forming a mask layer through forming an opening at a portion of the mask material layer corresponding to the portion of the compound semiconductor layer where the defect exists; and etching the compound semiconductor layer for removing the portion of the compound semiconductor layer where the defect exists through the opening of the mask layer to form the defect-removed portion.

Abstract: Disclosed is a method of manufacturing a compound semiconductor solar cell including forming a compound semiconductor layer; and forming a defect-removed portion formed of an empty space through removing a portion of the compound semiconductor layer where a defect existed prior to removal. The forming of the defect-removed portion includes forming a mask material layer on the compound semiconductor layer; forming a mask layer through forming an opening at a portion of the mask material layer corresponding to the portion of the compound semiconductor layer where the defect exists; and etching the compound semiconductor layer for removing the portion of the compound semiconductor layer where the defect exists through the opening of the mask layer to form the defect-removed portion.

Abstract: A compound solar cell includes a compound semiconductor layer, a first electrode and a second electrode respectively formed on a first surface and a second surface of the compound semiconductor layer, a support substrate formed on the second electrode, an opening formed in the compound semiconductor layer, the opening positioned along a first longitudinal side of the compound semiconductor layer to expose the second electrode, and a through hole connected to the opening and formed to penetrate the second electrode and the support substrate.

Abstract: A window blind is disclosed. The window blind includes a slat having a convex curved surface. The window blind also includes a solar cell module having solar cells and being attached to the convex curved surface of the slat. The carrier generating portions of the solar cells are made of a thin film group III-V compound semiconductor that can be bent, so that the solar cells can be attached to the convex curved surface. The length of the curved surface of the solar cell module in the longitudinal direction is at least half the length of the curved surface of the slat in the longitudinal direction. The solar cell module is disposed eccentrically to one side with respect to the transverse centerline of the slat.

Abstract: A solar cell module having flexibility is disclosed. The solar cell module includes a first solar cell and a second solar cell disposed adjacent to each other. The solar cell module also includes an interconnector disposed between the first and second solar cells, and configured to serially connect the first and second solar cells with each other. Each of the first and second solar cells includes: a flexible substrate, a lower electrode formed on the flexible substrate, a III-V group compound semiconductor partially formed on the lower electrode such that a partial region of the lower electrode is exposed to outside, and an upper electrode formed on the III-V group compound semiconductor. The interconnector is disposed to cover a space between the first and second solar cells, and is electrically connected to the lower electrode of the first solar cell and the upper electrode of the second solar cell.

Abstract: A solar cell includes a substrate of a first conductive type, an emitter region which is positioned at a first surface of the substrate and has a second conductive type different from the first conductive type, a first surface field region which is positioned at the first surface of the substrate and separated from the emitter region, a first auxiliary electrode positioned directly on the emitter region, a second auxiliary electrode positioned directly on the first surface field region, a first main electrode positioned directly on the first auxiliary electrode, and a second main electrode positioned directly on the second auxiliary electrode. Each of the first and second auxiliary electrodes is a transparent conductive layer formed by doping a transparent conductive oxide layer with a conductive material.