Abstract: The present invention provides an isotropic etching method of two-dimensional semiconductor materials. The present invention provides an isotropic etching method of two-dimensional semiconductor materials including a first operation of arranging an etching object having a two-dimensional transition metal chalcogenide layer inside an etching space of a remote plasma system in which a discharge space and the etching space are separated, a second operation of extracting oxygen or halogen radical among plasma generated in the discharge space and reacting the two-dimensional transition metal chalcogenide layer with a surface to form an oxide layer and a radical adsorbate layer, and a third operation of selectively removing the oxide layer and the radical adsorbate layer in the etching space, wherein only an upper layer of the two-dimensional transition metal chalcogenide is precisely etched in units of atoms without defects and damage in a lower layer.

Abstract: An apparatus for providing an antibacterial film according to an embodiment of the present disclosure makes it possible to place an antibacterial film over a button on a manipulation panel through an antibacterial film providing unit and an antibacterial film recovery unit, thereby preventing the spread of bacteria that may be transmitted by many users' button manipulation. Additionally, it is possible to automatically replace the antibacterial film that covers the button on the manipulation panel at a predetermined time interval set through an auto-timer unit, thereby improving the convenience of use. Additionally, it is possible to sterilize the antibacterial film after use through a sterilization unit provided in the antibacterial film recovery unit for reuse, thereby achieving resource savings.