Abstract: The present disclosure provides a polishing pad, which may maintain polishing performances required for a polishing process, such as a removal rate and a polishing profile, minimize defects that may occur on a wafer during the polishing process, and polish layers of different materials so as to have the same level of flatness even when the layers are polished at the same time, and a method for producing the polishing pad. In addition, according to the present disclosure, it is possible to determine a polishing pad, which shows an optimal removal rate selectivity along with excellent performance in a CMP process, through the physical property values of the polishing pad without a direct polishing test.

Abstract: A display module includes: a display panel having a first area, a second area, and a third area; and a sensor disposed on the display panel, wherein the sensor has a transmissive area, a first sensing area, and a second sensing area, wherein the transmissive area overlaps the first area, wherein the first sensing area overlaps the second area, and the second sensing area overlaps the third area, wherein the sensor includes a plurality of first electrodes and a plurality of second electrodes, and each of the plurality of first electrodes and the plurality of second electrodes has a mesh structure, and wherein the mesh structure includes a first mesh structure and a second mesh structure, wherein the first mesh structure overlaps the first sensing area, wherein the second mesh structure overlaps the second sensing area. The first mesh structure and the second mesh structure are different from each other.

Abstract: Embodiments relate to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors, a process for preparing the same, and a process for preparing a semiconductor device using the same. In the polishing pad according to the embodiment, the size (or diameter) and distribution of a plurality of pores are adjusted, whereby the polishing performance such as polishing rate and within-wafer non-uniformity can be further enhanced.

Abstract: A compound represented by Chemical Formula 1 wherein each substituent is the same as defined in the specification, a photosensitive resin composition including the same, and a color filter manufactured using the photosensitive resin composition are provided.

Abstract: A compound represented by Chemical Formula 1 wherein each substituent is the same as defined in the specification, a photosensitive resin composition including the same, and a color filter manufactured using the photosensitive resin composition are provided.

Abstract: A compound represented by Chemical Formula 1, wherein in Chemical Formula 1, each substituent is the same as defined in the detailed description, a photosensitive resin composition including the same, and a color filter manufactured using the photosensitive resin composition are provided.

Abstract: A compound represented by Chemical Formula 1, wherein in Chemical Formula 1, each substituent is the same as defined in the detailed description, a photosensitive resin composition including the same, and a color filter manufactured using the photosensitive resin composition are provided.

Abstract: A mobile terminal and a method of controlling the same are provided. The mobile terminal includes: a body; a sensing unit for acquiring a motion of the body; a camera provided in at least one side of the body to photograph an image; at least one display provided in at least one side of the body; and a controller for forming information related to at least one object included in the photographed image into a group according to the acquired motion and for controlling to display the information in the at least one display. Therefore, information is formed into a group and displayed according to a motion of a body and thus a state that can easily select necessary information can be provided.

Abstract: A method of preparing nanorod arrays using ion beam implantation is described that includes defining a pattern on a substrate and then implanting ions into the substrate using ion beam implantation. Next, a thin film is deposited on the substrate. During film growth, nanotrenches form and catalyze the formation of nanorods through capillary condensation. The resulting nanorods are aligned with the supporting matrix and are free from lattice and thermal strain effect. The density, size, and aspect ratios of the nanorods can be varied by changing the ion beam implantation and thin film growth conditions resulting in control of emission efficiency.

Abstract: A photovoltaic device having multi-junction nanostructures deposited as a multi-layered thin film on a substrate. Preferably, the device is grown as InxGa1-xN multi-layered junctions with the gradient x, where x is any value in the range from zero to one. The nanostructures are preferably 5-500 nanometers and more preferably 10-20 nanometers in diameter. The values of x are selected so that the bandgap of each layer is varied from 0.7 eV to 3.4 eV to match as nearly as possible the solar energy spectrum of 0.4 eV-4 eV.