Abstract: The present disclosure relates to an antibody binding specifically to CD55 or an antigen-binding fragment thereof; and a composition for preventing, treating and/or diagnosing cancer containing the same. The antibody of the present disclosure may be used as an effective therapeutic composition for various CD55-mediated diseases since it shows high binding ability and inhibitory effect for the CD55 protein which promotes tumor growth by inhibiting the complement immune mechanism. In addition, the antibody of the present disclosure may be usefully used as an effective therapeutic adjuvant that fundamentally removes drug resistance and remarkably improves therapeutic responsiveness in various diseases in which resistance to therapeutic agents with CDC (complement-dependent cytotoxicity) as a mechanism of action has been induced due to overexpression of CD55.

Abstract: Provided is a method for manufacturing a stent, including: coating a coating material on a stent; and drying the stent at a temperature in the range of from 40° C. to 150° C., and the coating and the drying are simultaneously performed.

Abstract: Provided is a method for manufacturing a stent, including: coating a coating material on a stent; and drying the stent at a temperature in the range of from 40° C. to 150° C., and the coating and the drying are simultaneously performed.

Abstract: A vertical memory device includes a channel, a conductive pattern, gate electrodes, a bit line and a conductive line. A plurality of the channels and the conductive patterns extend in a vertical direction from a top surface of a substrate. The gate electrodes surround outer sidewalls of the channels and the conductive patterns. The gate electrodes are stacked in the vertical direction to be spaced apart from each other. The bit line is electrically connected to the channels. The conductive line is electrically connected to the conductive patterns.

Abstract: A floating gate type nonvolatile memory device comprises a semiconductor layer, wordlines crossing over the semiconductor layer, and a memory element disposed between the wordlines and facing the semiconductor layer.

Abstract: A floating gate type nonvolatile memory device comprises a semiconductor layer, wordlines crossing over the semiconductor layer, and a memory element disposed between the wordlines and facing the semiconductor layer.

Abstract: A cell string included in a memory cell array of a nonvolatile memory device includes a plurality of memory cells, a string select transistor, and a ground select transistor. The plurality of memory cells are connected in series. The string select transistor is connected between a bitline and the plurality of memory cells, and has a structure substantially the same as a structure of each memory cell. The ground select transistor is connected between the plurality of memory cells and a common source line, and has a structure substantially the same as the structure of each memory cell.

Abstract: A method of preparing a composite of organic and inorganic compounds includes the steps of reacting a mixed solution of a metal alkoxide and a silicon-containing compound with a catalyst to produce an alcogel of a metal oxide or a complex metal oxide. The metal alkoxide is prepared by reacting at least one metal with an alcohol and the mixed solution is prepared by mixing the metal alkoxide with the silicon-containing compound. An alcogel is produced from the reacting step and alcohol is impregnated within the inorganic oxide lattice structure of the alcogel. Furthermore, the method of preparing a composite of an organic and an inorganic compound includes the steps of centrifuging the alcogel to separate any alcohol from the alcogel to form a gel, adding an organic monomer the gel and polymerizing the organic monomer in-situ to form an organic polymer. The resulting composite has characteristics of both the parent organic and inorganic compounds.