Patents by Inventor Hyman Joseph Levinstein

Hyman Joseph Levinstein has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming titanium silicide in situ
    Patent number: 6110821
    Abstract: Titanium is sputtered in an ionized metal plasma sputtering chamber to form titanium silicide in situ in the bottom of openings onto silicon in a series of steps that change the temperature and deposition conditions of sputtering. Ionized titanium is sputtered cold, the temperature is rapidly increased by passing argon through the heated substrate support without sputtering, thereby initiating titanium silicide formation, and then the sputtering of titanium ions is continued at high temperatures to deposit titanium silicide.To deposit titanium silicide in very high aspect ratio openings, a first layer of titanium atoms is sputter deposited in conventional manner to line the sidewalls of the openings, followed by sputtering from a plasma and continuing with the above process.
    Type: Grant
    Filed: January 27, 1998
    Date of Patent: August 29, 2000
    Assignee: Applied Materials, Inc.
    Inventors: Gene Y. Kohara, Fusen Chen, Hyman Joseph Levinstein, Zheng Xu, Peijun Ding, Gongda Yao, Hong Zhang
  • Radial flow reactor including glow discharge limiting shield
    Patent number: 4033287
    Abstract: An improved radio frequency (rf) powered radial flow cylindrical reactor utilizes a gas shield which substantially limits the glow plasma discharge reaction to a section of the reactor over the semiconductor substrates which are to be coated. The gas shield permits the use of higher rf input power which contributes to the formation of protective films that have desirable physical and electrical characteristics.
    Type: Grant
    Filed: January 22, 1976
    Date of Patent: July 5, 1977
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Frank Bernard Alexander, Jr., Cesar Deduyo Capio, Victor Emerald Hauser, Jr., Hyman Joseph Levinstein, Cyril Joseph Mogab, Ashok Kumar Sinha, Richard Siegfried Wagner
  • Ohmics contacts of germanium and palladium alloy from group III-V n-type semiconductors
    Patent number: 4011583
    Abstract: A metallization scheme for providing an ohmic contact to n-type III-V semiconductors is described. A metallurgical combination including germanium and palladium is formed on the semiconductor surface either in the form of an alloy or discrete layers. The structure is then heated so that the metallic and semiconductor components interdiffuse to establish the ohmic contact without melting of the metal. One advantage of such a solid state process is the high degree of dimensional control of the contact which is attainable.
    Type: Grant
    Filed: May 27, 1976
    Date of Patent: March 8, 1977
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Hyman Joseph Levinstein, Ashok Kumar Sinha
  • Ohmic contacts for group III-V n-type semiconductors
    Patent number: 3965279
    Abstract: A metallization scheme for providing an ohmic contact to n-type III-V semiconductors is described. A metallurgical combination including germanium and palladium is formed on the semiconductor surface either in the form of an alloy or discrete layers. The structure is then heated so that the metallic and semiconductor components interdiffuse to establish the ohmic contact without melting of the metal. One advantage of such a solid state process is the high degree of dimensional control of the contact which is attainable.
    Type: Grant
    Filed: September 3, 1974
    Date of Patent: June 22, 1976
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Hyman Joseph Levinstein, Ashok Kumar Sinha