Abstract: A plasma etch process is described for the etching of oxide with a high selectivity to nitride, including nitride formed on uneven surfaces of a substrate, e.g., on sidewalls of steps on an integrated circuit structure. The addition of a hydrogen-bearing gas to C4F8 or C2F6 etch gases and a scavenger for fluorine, in a plasma etch process for etching oxide in preference to nitride, results in a high selectivity to nitride which is preserved regardless of the topography of the nitride portions of the substrate surface.

Abstract: A hybrid Johnsen-Rahbek chuck that provides a combination of both Coulombic and Johnsen-Rahbek chucking mechanisms. More specifically, the chuck contains a plurality of dielectric mesas deposited upon particular regions of the support surface of a chuck. The body of the chuck is generally fabricated from a Johnsen-Rahbek semiconducting dielectric. The mesas are formed from a thin film deposition of a highly-resistive dielectric. Consequently, the thin, highly resistive film prevents excess DC standby current as well as reduces the dependence of the electrostatic chuck performance on the wafer backside morphology and composition.

Abstract: Submicron vias are filled by sputter deposition of a conductor such as aluminum onto a substrate such as silicon or silicon oxides. The deposited aluminum film is deposited at a first lower temperature and then the temperature is increased. The differential coefficient of thermal expansion of the substrate relative to the metal conductor forces the conductor to expand into the via. Maintaining an effective thickness and controlling the temperature increase from the first temperature to the second temperature, effectively and reliably fills submicron vias having aspect ratios up to 4. The present invention is particularly useful with filling vias having re-entrant angles of up to 20.degree..