Patents by Inventor Hyman W. H. Lam
Hyman W. H. Lam has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11749543Abstract: A method includes receiving a plurality of sets of sensor data associated with a processing chamber of a substrate processing system. Each of the plurality of sets of sensor data comprises a corresponding sensor value of the processing chamber mapped to a corresponding spacing value of the processing chamber. The method further includes providing the plurality of sets of sensor data as input to a trained machine learning model. The method further includes obtaining, from the trained machine learning model, one or more outputs indicative of a health of the processing chamber. The method further includes causing, based on the one or more outputs, performance of one or more corrective actions associated with the processing chamber.Type: GrantFiled: July 6, 2020Date of Patent: September 5, 2023Assignee: Applied Materials, Inc.Inventors: Xuesong Lu, Yu Lei, Anup Phatak, Hyman W. H. Lam, Chong Jiang, Malcolm Emil Delaney, Yufei Hu
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Patent number: 11133155Abstract: Embodiments of a gas delivery apparatus for use in a radio frequency (RF) processing apparatus are provided herein. In some embodiments, a gas delivery apparatus for use in a radio frequency (RF) processing apparatus includes: a conductive gas line having a first end and a second end; a first flange coupled to the first end; a second flange coupled to the second end, wherein the conductive gas line extends through and between the first and second flanges; and a block of ferrite material surrounding the conductive gas line between the first and second flanges.Type: GrantFiled: September 23, 2019Date of Patent: September 28, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Daping Yao, Hyman W. H. Lam, John C. Forster, Jiang Lu, Can Xu, Dien-Yeh Wu, Paul F. Ma, Mei Chang
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Patent number: 10640870Abstract: A gas feedthrough assembly and processing apparatus using the same are disclosed herein. In some embodiments, the gas feedthrough assembly, includes a dielectric body; at least one channel extending through the dielectric body; and a dielectric tube disposed within the at least one channel, wherein an inner diameter of the at least one channel is greater than an outer diameter of the dielectric tube such that a gap is formed between an outer wall of the dielectric tube and an inner wall of the at least one channel.Type: GrantFiled: March 21, 2017Date of Patent: May 5, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Daping Yao, Hyman W. H. Lam, Jiang Lu, Dien-Yeh Wu, Can Xu, Paul F. Ma, Mei Chang
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Publication number: 20200020509Abstract: Embodiments of a gas delivery apparatus for use in a radio frequency (RF) processing apparatus are provided herein. In some embodiments, a gas delivery apparatus for use in a radio frequency (RF) processing apparatus includes: a conductive gas line having a first end and a second end; a first flange coupled to the first end; a second flange coupled to the second end, wherein the conductive gas line extends through and between the first and second flanges; and a block of ferrite material surrounding the conductive gas line between the first and second flanges.Type: ApplicationFiled: September 23, 2019Publication date: January 16, 2020Inventors: DAPING YAO, HYMAN W.H. LAM, JOHN C. FORSTER, JIANG LU, CAN XU, DIEN-YEH WU, PAUL F. MA, MEI CHANG
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Patent number: 10453657Abstract: Embodiments of a gas delivery apparatus for use in a radio frequency (RF) processing apparatus are provided herein. In some embodiments, a gas delivery apparatus for use in a radio frequency (RF) processing apparatus includes: a conductive gas line having a first end and a second end; a first flange coupled to the first end; a second flange coupled to the second end, wherein the conductive gas line extends through and between the first and second flanges; and a block of ferrite material surrounding the conductive gas line between the first and second flanges.Type: GrantFiled: July 5, 2017Date of Patent: October 22, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Daping Yao, Hyman W. H. Lam, John C. Forster, Jiang Lu, Can Xu, Dien-Yeh Wu, Paul F. Ma, Mei Chang
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Patent number: 9982343Abstract: Apparatus for providing plasma to a process chamber may include an electrode; a first ground plate disposed beneath the electrode defining a cavity therebetween; an insulator disposed between the electrode and first ground plate to prevent direct contact therebetween; a second ground plate disposed beneath the first ground plate defining a first channel; a plurality of first through holes through the first ground plate to fluidly couple the channel and cavity; a first gas inlet coupled to the first channel; a third ground plate disposed beneath the second ground plate defining a second channel; a plurality of conduits through the ground plates to fluidly couple the cavity to an area beneath the third ground plate; a plurality of gas outlet holes through the third ground plate to fluidly couple the second channel to the area beneath the third ground plate; and a second gas inlet coupled to the second channel.Type: GrantFiled: December 14, 2012Date of Patent: May 29, 2018Assignee: APPLIED MATERIALS, INC.Inventors: Chien-Teh Kao, Hyman W. H. Lam
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Publication number: 20180012732Abstract: Embodiments of a gas delivery apparatus for use in a radio frequency (RF) processing apparatus are provided herein. In some embodiments, a gas delivery apparatus for use in a radio frequency (RF) processing apparatus includes: a conductive gas line having a first end and a second end; a first flange coupled to the first end; a second flange coupled to the second end, wherein the conductive gas line extends through and between the first and second flanges; and a block of ferrite material surrounding the conductive gas line between the first and second flanges.Type: ApplicationFiled: July 5, 2017Publication date: January 11, 2018Inventors: DAPING YAO, HYMAN W.H. LAM, JOHN C. FORSTER, JIANG LU, CAN XU, DIEN-YEH WU, PAUL F. MA, MEI CHANG
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Publication number: 20170306488Abstract: A gas feedthrough assembly and processing apparatus using the same are disclosed herein. In some embodiments, the gas feedthrough assembly, includes a dielectric body; at least one channel extending through the dielectric body; and a dielectric tube disposed within the at least one channel, wherein an inner diameter of the at least one channel is greater than an outer diameter of the dielectric tube such that a gap is formed between an outer wall of the dielectric tube and an inner wall of the at least one channel.Type: ApplicationFiled: March 21, 2017Publication date: October 26, 2017Inventors: Daping YAO, Hyman W.H. LAM, Jiang LU, Dien-Yeh WU, Can XU, Paul F. MA, Mei CHANG
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Publication number: 20160326648Abstract: A valve for sealing a gas feedthrough is provided herein. In some embodiments, a valve for sealing off a gas feedthrough includes a valve body having an upper portion and a lower portion, wherein the upper portion includes a central opening, and wherein the lower portion includes an inner volume; a coupling member disposed within the inner volume and having a central conduit, wherein the inner volume is defined by an upper surface of the coupling member and an upper wall and sidewalls of the lower portion; a sealing member having a shaft extending through the central opening and a flange extending radially outward from the shaft, wherein the flange includes an upper surface which opposes the upper wall of the lower portion; and a biasing element disposed between the sealing member and coupling member to bias the sealing member against the upper wall.Type: ApplicationFiled: May 6, 2016Publication date: November 10, 2016Inventors: Hyman W. H. Lam, Dien-Yeh Wu, Paul F. Ma, Daping Yao
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Patent number: 9017776Abstract: Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel.Type: GrantFiled: September 24, 2012Date of Patent: April 28, 2015Assignee: Applied Materials, Inc.Inventors: Hyman W. H. Lam, Bo Zheng, Hua Ai, Michael Jackson, Xiaoxiong Yuan, Hou Gong Wang, Salvador P. Umotoy, Sang Ho Yu
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Patent number: 9004006Abstract: An apparatus and a method for depositing materials, and more particularly a vapor deposition chamber configured to deposit a material during a plasma-enhanced process are provided. In one embodiment a chamber comprises a chamber body defining a process volume, a substrate support disposed in the process volume and configured to support one or more substrates, a process lid assembly disposed over the substrate support, wherein the process lid assembly has a plasma cavity configured to generate a plasma and provide one or more radical species to the process volume, a RF (radio frequency) power source coupled to the gas distribution assembly, a plasma forming gas source coupled with the process lid assembly, and a reactant gas source coupled with the process lid assembly.Type: GrantFiled: April 27, 2011Date of Patent: April 14, 2015Assignee: Applied Materials, Inc.Inventors: Chien-Teh Kao, Hyman W. H. Lam, Mei Chang, David T. Or, Nicholas R. Denny, Xiaoxiong Yuan
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Publication number: 20140165911Abstract: Embodiments of apparatus for providing plasma to a process chamber are provided. In some embodiments, an apparatus may include a first ground plate; an electrode disposed beneath and spaced apart from the first ground plate by a first electrical insulator to define a first gap between the first ground plate and the electrode; a second ground plate disposed beneath and spaced apart from the electrode by a second electrical insulator to define a second gap between the electrode and the second ground plate; a gas inlet to provide a process gas to the first gap; a plurality of through holes disposed through the electrode coupling the first gap to the second gap; and a plurality of first gas outlet holes disposed through the second ground plate to fluidly couple the second gap to an area beneath the second plate.Type: ApplicationFiled: December 14, 2012Publication date: June 19, 2014Applicant: APPLIED MATERIALS, INC.Inventors: CHIEN-TEH KAO, HYMAN W.H. LAM, NICHOLAS R. DENNY, DAVID T. OR, MEI CHANG, MURALI K. NARASIMHAN
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Publication number: 20140165912Abstract: Apparatus for providing plasma to a process chamber may include an electrode; a first ground plate disposed beneath the electrode defining a cavity therebetween; an insulator disposed between the electrode and first ground plate to prevent direct contact therebetween; a second ground plate disposed beneath the first ground plate defining a first channel; a plurality of first through holes through the first ground plate to fluidly couple the channel and cavity; a first gas inlet coupled to the first channel; a third ground plate disposed beneath the second ground plate defining a second channel; a plurality of conduits through the ground plates to fluidly couple the cavity to an area beneath the third ground plate; a plurality of gas outlet holes through the third ground plate to fluidly couple the second channel to the area beneath the third ground plate; and a second gas inlet coupled to the second channel.Type: ApplicationFiled: December 14, 2012Publication date: June 19, 2014Applicant: APPLIED MATERIALS, INC.Inventors: CHIEN-TEH KAO, HYMAN W. H. LAM
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Patent number: 8747556Abstract: Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel.Type: GrantFiled: September 14, 2012Date of Patent: June 10, 2014Assignee: Applied Materials, Inc.Inventors: Hyman W. H. Lam, Bo Zheng, Hua Ai, Michael Jackson, Xiaoxiong Yuan, Hougong Wang, Salvador P. Umotoy, Sang Ho Yu
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Publication number: 20140137961Abstract: In some embodiments, a modular chemical delivery system may include a plurality of gas delivery units directly and removably coupled to each other, wherein each gas delivery unit includes a body with a first volume, a plurality of gas sticks disposed in the first volume, wherein each of the plurality of gas sticks is configured to be coupled to at least one gas supply through one or more inlets in the body, a plurality of valves disposed in the first volume, each valve respectively disposed in line with a corresponding one of the at least one gas supply, at least one outlet conduit to deliver at least one process gas to one or more gas delivery zones in a process chamber, and an electrical controller disposed in the first volume and configured to control the plurality of gas sticks and the plurality of valves.Type: ApplicationFiled: October 21, 2013Publication date: May 22, 2014Applicant: APPLIED MATERIALS, INC.Inventors: CHIEN-TEH KAO, MEI CHANG, HYMAN W. H. LAM, YU CHANG, JOEL M. HUSTON, OLKAN CUVALCI
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Publication number: 20140087091Abstract: Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel.Type: ApplicationFiled: September 24, 2012Publication date: March 27, 2014Applicant: Applied Materials, Inc.Inventors: Hyman W.H. Lam, Bo Zheng, Hua Ai, Michael Jackson, Xiaoxiong Yuan, Hougong Wang, Salvador P. Umotoy, San H. Yu
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Patent number: 8293015Abstract: Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel.Type: GrantFiled: September 14, 2011Date of Patent: October 23, 2012Assignee: Applied Materials, Inc.Inventors: Hyman W. H. Lam, Bo Zheng, Hua Ai, Michael Jackson, Xiaoxiong Yuan, Hougong Wang, Salvador P. Umotoy, Sang Ho Yu
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Publication number: 20110265721Abstract: An apparatus and a method for depositing materials, and more particularly a vapor deposition chamber configured to deposit a material during a plasma-enhanced process are provided. In one embodiment a chamber comprises a chamber body defining a process volume, a substrate support disposed in the process volume and configured to support one or more substrates, a process lid assembly disposed over the substrate support, wherein the process lid assembly has a plasma cavity configured to generate a plasma and provide one or more radical species to the process volume, a RF (radio frequency) power source coupled to the gas distribution assembly, a plasma forming gas source coupled with the process lid assembly, and a reactant gas source coupled with the process lid assembly.Type: ApplicationFiled: April 27, 2011Publication date: November 3, 2011Applicant: APPLIED MATERIALS, INC.Inventors: Chien-Teh Kao, Hyman W.H. Lam, Mei Chang, David T. Or, Nicholas R. Denny, Xiaoxiong Yuan
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Patent number: RE48994Abstract: Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectable with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.Type: GrantFiled: June 6, 2019Date of Patent: March 29, 2022Assignee: Applied Materials, Inc.Inventors: Joseph Yudovsky, Mei Chang, Faruk Gungor, Paul F. Ma, David Chu, Chien-Teh Kao, Hyman W. H. Lam, Dien-Yeh Wu