Abstract: The present invention relates to a fabrication method of LEDs incorporating a step of surface-treating a substrate by a laser and an LED fabricated by such a fabrication method. The present invention can use a laser in order to implement finer surface treatment to an LED substrate over the prior art. As a result, the invention can improve the light extraction efficiency of an LED while protecting the substrate from chronic problems of the prior art such as stress or defects induced from chemical etching and/or physical polishing.

Abstract: The present invention relates to a vertical nitride semiconductor light emitting diode. The present invention provides a vertical nitride semiconductor light emitting diode comprising a first conductive nitride semiconductor layer including an upper surface having a first electrode formed thereon; an active layer formed on a lower surface of the first conductive nitride semiconductor layer; a second conductive nitride semiconductor layer formed on a lower surface of the active layer; a highly reflective ohmic contact layer formed on the lower surface of the second conductive nitride semiconductor layer; and a metal substrate formed on the lower surface of the highly reflective ohmic contact layer. In accordance with the present invention, provided are effects such as good heat release, reduction of forward voltage, and improvement of electrostatic discharge effects. In addition, a broad light emitting area can be secured, thereby improving LED luminance.

Abstract: The present invention relates to a fabrication method of LEDs incorporating a step of surface-treating a substrate by a laser and an LED fabricated by such a fabrication method. The present invention can use a laser in order to implement finer surface treatment to an LED substrate over the prior art. As a result, the invention can improve the light extraction efficiency of an LED while protecting the substrate from chronic problems of the prior art such as stress or defects induced from chemical etching and/or physical polishing.

Abstract: Disclosed is a nitride semiconductor LED having a light emitting structure. In the light emitting structure, an n-doped semiconductor layer has a first region and a second region surrounding the first region on a top thereof, an active layer is formed on the second region of the n-doped semiconductor layer, and a p-doped nitride semiconductor layer is formed on the active layer. A p-electrode is formed on the p-doped semiconductor layer. An n-electrode is formed on the first region of the n-doped nitride semiconductor layer.