Abstract: The present invention relates to a method for cooking hot pepper gimbap and hot pepper gimbap cooking thereof, characterized by comprising: hot pepper fillings making process for adding black pepper and cooking oil to hot pepper fillings, including green Cheongyang chili pepper(green Ttaeong Cho), red Cheongyang chili pepper(red Ttaeong Cho), and carrot, and frying; seasoning mixing process for mixing hot pepper fillings and powder seasoning, including condiments and powder seasoning, together and frying again; cooling process for cooling hot pepper fillings with the powder seasoning at room temperature; mixing process for sprinkling black sesame over the rice and mixing the cooled hot pepper fillings with it; and hot pepper gimbap making process for spreading the mixed rice on the dried seaweed sheet and rolling it.

Abstract: A method for preparing a processed ginseng or a processed ginseng extract having increased contents of ginsenosides Rg3 and Rh2 by (a) inoculating an Aspergillus niger strain into a medium composed of ginseng and wheat bran; (b) culturing the strain of step (a); (c) purifying the cultured material of step (b) by ultrafiltration; (d) separating an enzyme from the purified material of step (c); (e) adding the enzyme of step (d) to ginseng or red ginseng; (f) fermenting the ginseng or red ginseng of step (e); (g) separating the fermented material of step (f) to obtain a supernatant; (h) concentrating the supernatant of step (g); (i) reacting the concentrate of step (h) with organic acid; and (j) neutralizing, filtering, purifying, concentrating and drying the reaction product of step (i).

Abstract: The present invention relates to a method for preparing a processed ginseng or processed ginseng extract. Specifically, the invention relates to a method for preparing a processed ginseng or processed ginseng extract having increased ginsenoside contents. More specifically, the invention relates to a method of preparing a novel processed ginseng or processed ginseng extract having increased ginsenoside contents by preparing saponinase, fermenting ginseng or red ginseng with the prepared saponinase and hydrolyzing the fermented ginseng or red ginseng with an organic acid and to an anticancer supplement composition or pharmaceutical composition comprising the processed ginseng or processed ginseng extract prepared thereby.

Abstract: A cassette jig for a wafer cleaning apparatus is provided, comprising a jig body having an inner space designed to receive a first wafer therein; and a guide member mounted in the jig body and operative to guide a cassette to be installed in the jig body, the cassette having an inner space designed to receive a second wafer of a relatively smaller diameter than the first wafer therein.

Abstract: A semiconductor wet etchant includes deionized water, a fluorine-based compound, an oxidizer and an inorganic salt. A concentration of the fluorine-based compound is 0.25 to 10.0 wt % based on a total weight of the etchant, a concentration of the oxidizer is 0.45 to 3.6 wt % based on a total weight of the etchant, and a concentration of the inorganic salt is 1.0 to 5.0 wt % based on a total weight of the etchant. The inorganic salt comprises at least one of an ammonium ion (NH4+) and a chlorine ion (Cl?).

Abstract: A semiconductor wet etchant includes deionized water, a fluorine-based compound, an oxidizer and an inorganic salt. A concentration of the fluorine-based compound is 0.25 to 10.0 wt % based on a total weight of the etchant, a concentration of the oxidizer is 0.45 to 3.6 wt % based on a total weight of the etchant, and a concentration of the inorganic salt is 1.0 to 5.0 wt % based on a total weight of the etchant. The inorganic salt comprises at least one of an ammonium ion (NH4+) and a chlorine ion (Cl?).

Abstract: A cleaning solution for a quartz part and a method for cleaning the quartz part are provided. The cleaning solution includes from about 5 to about 35 wt % of an ammonium compound, from about 7 to about 55 wt % of an acidic oxidizing agent, from about 5 to about 30 wt % of a fluorine compound and a remaining amount of water. Residual thin films and impurities on the surface of the quartz part may be removed while reducing the damage onto the quartz part.

Abstract: A flat panel display device is disclosed. The flat panel display device includes a flat display panel, a driving integrated circuit driving the flat display panel, a cover shield, and a flexible connecting film on which the driving integrated circuit is mounted. The cover shield includes adhesive areas each having an adhesive portion and a non-adhesive area having a non-adhesive portion. An end of the flexible connecting film is electrically connected to an edge of the flat display panel, and the other end is positioned in the non-adhesive area of the cover shield.

Abstract: In a cleaning composition, a method of cleaning a semiconductor substrate and a method of manufacturing a semiconductor device, the cleaning composition includes about 0.5 to about 5% by weight of an organic ammonium hydroxide compound, about 0.1 to about 3% by weight of a fluoride compound, about 0.1 to about 3% by weight of a buffering agent, about 0.5 to about 5% by weight of an etching accelerant, and a remainder of water.

Abstract: In a composition for removing a polymeric contaminant that may remain on an apparatus for manufacturing a semiconductor device and a method of removing a polymeric contaminant using the composition, the composition includes from about 5 to 10 percent by weight of a fluoride salt, from about 5 to 15 percent by weight of an acid or a salt thereof, and from about 75 to 90 percent by weight of an aqueous solution of glycol. The composition can effectively remove the polymeric contaminant from the apparatus within a relatively short period of time, and suppress damages to parts of the apparatus.

Abstract: A composition for removing a photoresist includes about 5 to about 20 percent by weight of an alcoholamide compound, about 15 to about 60 percent by weight of a polar aprotic solvent, about 0.1 to about 6 percent by weight of an additive, and pure water. The alcoholamide compound is chemically structured as follows: where R1 is a hydroxyl group or a hydroxyalkyl group, and R2 is a hydrogen atom or a hydroxyalkyl group.

Abstract: A composition for removing a photoresist includes about 5 to about 20 percent by weight of an alcoholamide compound, about 15 to about 60 percent by weight of a polar aprotic solvent, about 0.1 to about 6 percent by weight of an additive, and pure water. The alcoholamide compound is chemically structured as follows: where R1 is a hydroxyl group or a hydroxyalkyl group, and R2 is a hydrogen atom or a hydroxyalkyl group.

Abstract: A cleaning solution for a quartz part and a method for cleaning the quartz part are provided. The cleaning solution includes from about 5 to about 35 wt % of an ammonium compound, from about 7 to about 55 wt % of an acidic oxidizing agent, from about 5 to about 30 wt % of a fluorine compound and a remaining amount of water. Residual thin films and impurities on the surface of the quartz part may be removed while reducing the damage onto the quartz part.

Abstract: A composition for removing a photoresist includes about 5 to about 20 percent by weight of an alcoholamide compound, about 15 to about 60 percent by weight of a polar aprotic solvent, about 0.1 to about 6 percent by weight of an additive, and pure water. The alcoholamide compound is chemically structured as follows: where R1 is a hydroxyl group or a hydroxyalkyl group, and R2 is a hydrogen atom or a hydroxyalkyl group.

Abstract: In a cleaning composition, a method of cleaning a semiconductor substrate and a method of manufacturing a semiconductor device, the cleaning composition includes about 0.5 to about 5% by weight of an organic ammonium hydroxide compound, about 0.1 to about 3% by weight of a fluoride compound, about 0.1 to about 3% by weight of a buffering agent, about 0.5 to about 5% by weight of an etching accelerant, and a remainder of water.

Abstract: A semiconductor wet etchant includes deionized water, a fluorine-based compound, an oxidizer and an inorganic salt. A concentration of the fluorine-based compound is 0.25 to 10.0 wt % based on a total weight of the etchant, a concentration of the oxidizer is 0.45 to 3.6 wt % based on a total weight of the etchant, and a concentration of the inorganic salt is 1.0 to 5.0 wt % based on a total weight of the etchant. The inorganic salt comprises at least one of an ammonium ion (NH4+) and a chlorine ion (Cl?).

Abstract: In a composition for removing a polymeric contaminant that may remain on an apparatus for manufacturing a semiconductor device and a method of removing a polymeric contaminant using the composition, the composition includes from about 5 to 10 percent by weight of a fluoride salt, from about 5 to 15 percent by weight of an acid or a salt thereof, and from about 75 to 90 percent by weight of an aqueous solution of glycol. The composition can effectively remove the polymeric contaminant from the apparatus within a relatively short period of time, and suppress damages to parts of the apparatus.

Abstract: A flat panel display device is disclosed. The flat panel display device includes a flat display panel, a driving integrated circuit driving the flat display panel, a cover shield, and a flexible connecting film on which the driving integrated circuit is mounted. The cover shield includes adhesive areas each having an adhesive portion and a non-adhesive area having a non-adhesive portion. An end of the flexible connecting film is electrically connected to an edge of the flat display panel, and the other end is positioned in the non-adhesive area of the cover shield.

Abstract: Embodiments of systems (e.g., the terminal apparatus) and methods according to the application can perform a handoff from a WiBro (wireless broadband) service to a wireless LAN service or from a WIMAX (worldwide interoperability for microwave access) service to a wireless LAN service. One embodiment can perform a communication according to a WIMAX or WiBro standard and, upon entering into an area where a communication conforming to a wireless LAN standard is available, perform a communication according to the wireless LAN standard.

Abstract: Embodiments of methods and systems according to the application can transmit voice data by using a wireless LAN and a Bluetooth. One system embodiment can include a headset, an AP, and a terminal device to communicate with the headset according to a first protocol (e.g., Bluetooth) to transmit downlink voice data to the headset and to receive uplink voice data from the headset and to communicate with the AP according to a second protocol (e.g., wireless LAN) to transmit the uplink voice data to the AP and to receive the downlink voice data from the AP. The terminal device can receive the downlink voice data from the AP after the terminal device sends a PS-Poll frame to the AP within a period during which a transmission/reception between the terminal device and the headset is not to be performed.