Abstract: A semiconductor package includes a first semiconductor chip and a second semiconductor chip on the first semiconductor chip. The first semiconductor chip includes a first wiring layer on a first substrate, and a first passivation layer on the first wiring layer and that exposes at least portions of first bonding pads and a first test pad that are on the second wiring layer. The second semiconductor chip includes a second wiring layer on a second substrate and a second passivation layer on the second wiring layer and that exposes at least portions of third bonding pads and second test pad that are provided on the second wiring layer. The first bonding pads and respective ones of the third bonding pads are directly bonded to each other. The first passivation layer and the second passivation layer are directly bonded to each other.

Abstract: A semiconductor package includes at least one second semiconductor chip stacked on a first semiconductor chip. An underfill layer is interposed between the first semiconductor chip and the at least one second semiconductor chip. The first semiconductor chip includes a first substrate, a first passivation layer disposed on the first substrate. The first passivation layer includes a first recess region. A first pad covers a bottom surface and sidewalls of the first recess region. The at least one second semiconductor chip includes a second substrate, a second passivation layer disposed adjacent to the first substrate, a conductive bump protruding outside the second passivation layer towards the first semiconductor chip and an inter-metal compound pattern disposed in direct contact with both the conductive bump and the first pad. The underfill layer is in direct contact with both the conductive bump and the inter-metal compound pattern.

Abstract: A package-on-package type package includes a lower semiconductor package and an upper semiconductor package. The lower semiconductor package includes a first semiconductor device including a through electrode, a second semiconductor device disposed on the first semiconductor device and including a second through electrode electrically connected to the first through electrode, a first molding member covering a sidewall of at least one of the first semiconductor device and the second semiconductor device, a second molding member covering a sidewall of the first molding member, and an upper redistribution layer disposed on the second semiconductor device and electrically connected to the second through electrode.

Abstract: A semiconductor package includes a first semiconductor chip including a first semiconductor device, a second semiconductor chip including a second semiconductor device, and a bonding structure between the first and second semiconductor chips, the bonding structure including a first bonding pad, a first bonding insulating layer, a second bonding pad in contact with the first bonding pad, and a second bonding insulating layer in contact with the first bonding insulating layer. The first bonding pad may include a first pad metal layer and a first conductive barrier layer surrounding the first pad metal layer, and the first conductive barrier layer may include a horizontal extension portion extending on an edge of an upper surface of the first pad metal layer.

Abstract: An integrated circuit device includes a semiconductor substrate, first through-silicon-via (TSV) structures penetrating a first region of the semiconductor substrate and spaced apart from each other by a first pitch, a first individual device between the first TSV structures and spaced apart from the first TSV structures by a distance that is greater than a first keep-off distance, and second TSV structures penetrating a second region of the semiconductor substrate and spaced apart from each other by a second pitch that is less than the first pitch. The second region of the semiconductor device does not include an individual device that is homogeneous with the first individual device and between the second TSV structures.

Abstract: An embodiment of the present invention provides, comprising: a communication unit configured to communicate with a plurality of external AI apparatuses; and a processor configured to receive sound signals of the user from the plurality of external AI apparatuses, calculate a distance and a variation of the distance from each of the plurality of external AI apparatuses to the user based on the received sound signals, determine a current path of the user based on the calculated distance and the calculated variation of the distance, and determine a future path of the user based on the current path.

Abstract: A chip-stacked semiconductor package includes a first chip including a first detection pad and a second detection pad; a second chip provided on the first chip, the second chip including a third detection pad facing the first detection pad and a fourth detection pad facing the second detection pad; and a first medium provided between the first detection pad and the third detection pad to connect the first detection pad to the third detection pad through the first medium, and a second medium, different from the first medium, provided between the second detection pad and the fourth detection pad to connect the second detection pad to the fourth detection pad through the second medium.

Abstract: An embodiment of the present invention provides an artificial intelligence (AI) apparatus for recognizing a speech of a user, the artificial intelligence apparatus includes a memory to store a speech recognition model and a processor to obtain a speech signal for a user speech, to convert the speech signal into a text using the speech recognition model, to measure a confidence level for the conversion, to perform a control operation corresponding to the converted text if the measured confidence level is greater than or equal to a reference value, and to provide feedback for the conversion if the measured confidence level is less than the reference value.

Abstract: A semiconductor package including a substrate; a first semiconductor chip on the substrate; a second semiconductor chip on the first semiconductor chip; and at least one connection terminal between the first semiconductor chip and the second semiconductor chip, wherein the first semiconductor chip includes a first semiconductor chip body; and at least one upper pad on a top surface of the first semiconductor chip body and in contact with the at least one connection terminal, the at least one upper pad includes a recess that is downwardly recessed from a top surface thereof, and a depth of the recess is less than a thickness of the at least one upper pad.

Abstract: Disclosed are semiconductor packages and methods of fabricating the same. The semiconductor package comprises a molding layer, a silicon layer on the molding layer, a glass upwardly spaced apart from the silicon layer, and a connection dam coupled to the silicon layer and connecting the silicon layer to the glass. The silicon layer includes a silicon layer body, a silicon layer via extending vertically in the silicon layer body, and a micro-lens array on a top surface of the silicon layer body. A bottom surface of the silicon layer body contacts a top surface of the molding layer. The molding layer includes a molding layer body, a molding layer via that extends vertically in the molding layer body and has electrical connection with the silicon layer via, and a connection ball connected to a bottom surface of the molding layer via.

Abstract: A semiconductor package includes a first semiconductor chip comprising a semiconductor substrate and a redistribution pattern on a top surface of the semiconductor substrate, the redistribution pattern having a hole exposing an inner sidewall of the redistribution pattern, a second semiconductor chip on a top surface of the first semiconductor chip, and a bump structure disposed between the first semiconductor chip and the second semiconductor chip. The bump structure is disposed in the hole and is in contact with the inner sidewall of the redistribution pattern.

Abstract: Provided is an artificial intelligence air conditioner for calibrating sensor data. The artificial intelligence air conditioner includes a sensor unit configured to acquire sensor data; a communication unit configured to receive at least one of external sensor data or environment information from at least one of an external air conditioner or an internet of things (IoT) device; and a processor. The processor is configured to generate estimated sensor data corresponding to the sensor unit using a sensor data estimation model, the received external sensor data and the received environment information, determine whether the acquired sensor data is abnormal using the generated estimated sensor data, perform an air conditioning function using the acquired sensor data if the acquired sensor data is determined as normal, and perform the air conditioning function using the generated estimated sensor data if the acquired sensor data is determined as abnormal.

Abstract: A semiconductor package includes a package substrate, a lower semiconductor device arranged on the package substrate and including first through electrodes, first lower connection bumps arranged between the package substrate and the lower semiconductor device and electrically connecting the package substrate to the first through electrodes, a connecting substrate arranged on the package substrate and including second through electrodes, second lower connection bumps arranged between the package substrate and the connecting substrate and electrically connecting the package substrate to the second through electrodes, and an upper semiconductor device arranged on the lower semiconductor device and electrically connected to the first through electrodes and the second through electrodes.

Abstract: A robot cleaner for performing cleaning using artificial intelligence includes a suction unit configured to suction dust, a driving unit to drive the robot cleaner, a memory configured to store a compensation model for inferring optimal suction output and driving output for cleaning environment information for learning, and a processor configured to acquire cleaning environment information, determine a suction output value and a driving speed of the robot cleaner from the acquired cleaning environment information using the compensation model, control the suction unit to suction the dust with the determined suction output value, and control the driving unit to drive the robot cleaner at the determined driving speed.

Abstract: An artificial intelligence device is provided. The artificial intelligence device according to an embodiment of the present disclosure includes: an input unit configured to receive a speech input; and a processor configured to operate in an interaction mode if a second wakeup word for setting an operation mode is recognized after a first wakeup word for calling the artificial intelligence device is recognized, and process one or more commands received after the second wakeup word according to the operation mode indicated by the second wakeup word.

Abstract: The present disclosure relates to an artificial intelligence apparatus capable of classifying and detecting an item of an unseen class having high visual similarity to an item of a seen class that has been learned and known in advance, and a method for detecting an unseen class items thereof, and when the item image is input, generate encoded data by encoding the item image, generate decoded data by decoding the encoded data using a codebook of a plurality of codebooks in which encoded data for each item class is stored, corresponding to a pre-learned item class, and detect the unknown item by classifying the class of the item image based on the generated decoded data.

Abstract: A first semiconductor chip includes a first semiconductor substrate, a first wiring structure arranged on the first semiconductor substrate, a plurality of through electrodes penetrating through at least a portion of the first semiconductor substrate, and a plurality of first bonding pads respectively connected to the plurality of through electrodes. A second semiconductor chip is stacked on the first semiconductor chip and includes a second semiconductor substrate, a second wiring structure arranged on the second semiconductor substrate, and a second bonding pad connected to each of the plurality of first bonding pads and arranged on the active surface of the second semiconductor substrate. Each first bonding pad has a top surface that is in direct contact with the second bonding pad and a bottom surface that is in direct contact with one through electrode.

Abstract: A semiconductor package may include a redistribution substrate, a first semiconductor chip on the redistribution substrate, and a second semiconductor chip between the redistribution substrate and the first semiconductor chip. The second semiconductor chip may have a width in a first direction that is smaller than a width of the first semiconductor chip in the first direction. The first semiconductor chip may include a first alignment key pattern on a bottom surface thereof. The second semiconductor chip may be spaced apart from the first alignment key pattern. The second semiconductor chip may include a second interconnection layer on the bottom surface of the first semiconductor chip, a second semiconductor substrate on a bottom surface of the second interconnection layer and exposing a bottom surface of an edge region of the second interconnection layer, and a second alignment key pattern on the edge region of the second interconnection layer.

Abstract: An integrated circuit device includes a semiconductor substrate, first through-silicon-via (TSV) structures penetrating a first region of the semiconductor substrate and spaced apart from each other by a first pitch, a first individual device between the first TSV structures and spaced apart from the first TSV structures by a distance that is greater than a first keep-off distance, and second TSV structures penetrating a second region of the semiconductor substrate and spaced apart from each other by a second pitch that is less than the first pitch. The second region of the semiconductor device does not include an individual device that is homogeneous with the first individual device and between the second TSV structures.

Abstract: A semiconductor package includes a first semiconductor chip including a first substrate and a first bonding layer disposed on the first substrate, and having a flat first outer surface provided by the first bonding layer; and a second semiconductor chip disposed on the first outer surface of the first semiconductor chip, including a second substrate and a second bonding layer disposed on the second substrate, and having a flat second outer surface provided by the second bonding layer and contacting the first outer surface of the first semiconductor chip. The first bonding layer includes a first outermost insulating layer providing the first outer surface, a first internal insulating layer stacked between the first outermost insulating layer and the first substrate, first external marks disposed in the first outermost insulating layer and spaced apart from each other, and first internal marks interlaced with the first external marks within the first internal insulating layer.