Abstract: An imaging device comprises a pixel including a photoelectric conversion device for generating pixel signals, a floating diffusion region, a first dual conversion gain (DCG) transistor for providing additional capacitance to the floating diffusion region, and a first DCG capacitor connected to the floating diffusion region through the first DCG transistor; and an analog-digital converter (ADC) for converting the pixel signals into image data, wherein the pixel includes a first metal layer including a first DCG gate electrode of the first DCG transistor and a first electrode of the first DCG capacitor, a second metal layer including a dual conversion line that supplies a first DCG gate signal to the first DCG gate electrode, and a second electrode overlapping the first electrode, a first insulating layer between the first DCG gate electrode and the dual conversion line, and a second insulating layer between the first electrode and the second electrode.

Abstract: Image sensing devices capable of implementing multiple gains are disclosed. In an embodiment, an image sensing device includes a first pixel including first and second dual conversion gain (DCG) transistors that adjust capacitance of a first floating diffusion region shared by a plurality of pixels included in a first pixel group; and a second pixel including third and fourth DCG transistors that adjust capacitance of a second floating diffusion region shared by a plurality of pixels included in a second pixel group arranged at one side of the first pixel group. A gate of the first DCG transistor and a gate of the second DCG transistor are arranged closer to the second pixel from a center of the first pixel, and a gate of the third DCG transistor and a gate of the fourth DCG transistor are arranged closer to the first pixel from a center of the second pixel.

Abstract: Disclosed is an imaging device, including: an image sensing device including: an effective pixel region in which a first pixel group including active pixels configured to convert incident light into an electric signal to generate image pixel signals; and a second pixel group including the active pixels and light-shielded pixels into which introduction of the incident light is blocked are disposed; and an image signal processor configured to control the image sensing device.

Abstract: An imaging device comprises a pixel including a photoelectric conversion device for generating pixel signals, a floating diffusion region, a first dual conversion gain (DCG) transistor for providing additional capacitance to the floating diffusion region, and a first DCG capacitor connected to the floating diffusion region through the first DCG transistor; and an analog-digital converter (ADC) for converting the pixel signals into image data, wherein the pixel includes a first metal layer including a first DCG gate electrode of the first DCG transistor and a first electrode of the first DCG capacitor, a second metal layer including a dual conversion line that supplies a first DCG gate signal to the first DCG gate electrode, and a second electrode overlapping the first electrode, a first insulating layer between the first DCG gate electrode and the dual conversion line, and a second insulating layer between the first electrode and the second electrode.

Abstract: Image sensing devices are disclosed. In an embodiment, an image sensing device may include: a substrate; a photodiode formed in the substrate; a transfer transistor formed on the substrate; and an oxide transistor formed over the transfer transistor, and the oxide transistor may include: a gate electrode formed over the transfer transistor; a gate isolation layer formed on the gate electrode; an oxide layer formed on the gate isolation layer; a first electrode formed on one side of the oxide layer; and a second electrode formed on another side of the oxide layer.