Patents by Inventor Hyo-Jun YUN

Hyo-Jun YUN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130328199
    Abstract: A method for fabricating memory device includes forming a bit line pattern including a first conductive layer and a hard mask stacked over a substrate, forming a sacrificial layer on sidewalls of the bit line pattern, forming a second conductive layer in contact with the sacrificial layer and adjacent to the bit line pattern, recessing the second conductive layer, forming an air gap between the recessed second conductive layer and the first conductive layer by removing the sacrificial layer, and forming an air gap capping layer on sidewalls of the hard mask to cap entrance of the air gap.
    Type: Application
    Filed: December 19, 2012
    Publication date: December 12, 2013
    Applicant: SK HYNIX INC.
    Inventors: Hyo-Jun YUN, Sei-Jin KIM, Hae-Il SONG