Patents by Inventor Hyo Kun Bae

Hyo Kun Bae has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8222960
    Abstract: An RF power amplifier includes an RF choke coil, a power amplification circuit unit, and an electrostatic discharge (ESD) protection unit. The RF choke coil is connected to a voltage terminal through which an operating voltage is applied. The RF choke coil supplies the operating voltage and interrupts an RF signal. The power amplification circuit unit is supplied with the operating voltage through the RF choke coil. The power amplification circuit unit amplifies an input signal inputted through an input terminal and outputs the amplified input signal through an output terminal. The ESD protection unit is connected between a first connection node and a ground. The ESD protection unit bypasses an ESD voltage from the first connection node to the ground, the first connection node being a node between the voltage terminal and the RF choke coil.
    Type: Grant
    Filed: January 14, 2011
    Date of Patent: July 17, 2012
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Youn Suk Kim, Dae Seok Jang, Hyo Kun Bae, Seong Geun Kim, Young Jean Song, Ju Young Park
  • Patent number: 8183919
    Abstract: A power amplifier includes an inverter amplification section configured to amplify AC components and remove DC components from at least one input signal, an impedance matching section configured to match an impedance of a transmission path of the at least one input signal amplified by the inverter amplification section, and an amplification section configured to amplify an impedance-matched signal from the impedance matching section according to a predetermined gain. The inverter amplification section includes at least one P-channel metal-oxide semiconductor field effect transistor (MOS FET) having a gate configured to receive the at least one input signal and at least one N-channel MOS FET having a gate configured to receive the at least one input signal. The at least one P-channel MOS FET and the at least one N-channel MOS FET are serially connected.
    Type: Grant
    Filed: June 25, 2010
    Date of Patent: May 22, 2012
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Young Jean Song, Shinichi Iizuka, Youn Suk Kim, Hyo Kun Bae, Sang Hee Kim, Jun Goo Won, Joong Jin Nam, Ki Joong Kim, Jae Hyouck Choi
  • Publication number: 20120062324
    Abstract: An RF power amplifier includes an RF choke coil, a power amplification circuit unit, and an electrostatic discharge (ESD) protection unit. The RF choke coil is connected to a voltage terminal through which an operating voltage is applied. The RF choke coil supplies the operating voltage and interrupts an RF signal. The power amplification circuit unit is supplied with the operating voltage through the RF choke coil. The power amplification circuit unit amplifies an input signal inputted through an input terminal and outputs the amplified input signal through an output terminal. The ESD protection unit is connected between a first connection node and a ground. The ESD protection unit bypasses an ESD voltage from the first connection node to the ground, the first connection node being a node between the voltage terminal and the RF choke coil.
    Type: Application
    Filed: January 14, 2011
    Publication date: March 15, 2012
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Youn Suk KIM, Dae Seok JANG, Hyo Kun BAE, Seong Geun KIM, Young Jean SONG, Ju Young PARK
  • Publication number: 20110121903
    Abstract: There is provided a power amplifier that can increase power efficiency by preventing power consumption caused by DC components from an RF input signal. A power amplifier according to an aspect of the invention may include: an inverter amplification section amplifying an input signal according to an inverter method to thereby remove DC components from the input signal; an impedance matching section matching an impedance of a transmission path of the input signal amplified by the inverter amplification section; and an amplification section amplifying an impedance-matched signal from the impedance matching section according to a gain set beforehand.
    Type: Application
    Filed: June 25, 2010
    Publication date: May 26, 2011
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Young Jean SONG, Shinichi IIZUKA, Youn Suk KIM, Hyo Kun BAE, Sang Hee KIM, Jun Goo WON, Joong Jin NAM, Ki Joong KIM, Jae Hyouck CHOI