Patents by Inventor Hyo Seon Suh

Hyo Seon Suh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10755942
    Abstract: Disclosed is a method for the fabrication of polymeric topcoat via initiated chemical vapor deposition (iCVD) or photoinitiated chemical vapor deposition (piCVD) in conjunction with directed self-assembly (DSA) of block copolymers to generate high resolution patterns. A topcoat deposited by iCVD or piCVD allows for conformal, ultra-thin, uniform, pinhole-free coatings. iCVD or piCVD topcoat enables the use of a diversity of block copolymer (BCP) materials for DSA and facilitates the direct and seamless integration of the topcoats for a pattern transfer process.
    Type: Grant
    Filed: August 24, 2017
    Date of Patent: August 25, 2020
    Assignees: Massachusetts Institute of Technology, University of Chicago
    Inventors: Do Han Kim, Hyo Seon Suh, Priya Moni, Karen K. Gleason, Paul Franklin Nealey
  • Publication number: 20180122648
    Abstract: Disclosed is a method for the fabrication of polymeric topcoat via initiated chemical vapor deposition (iCVD) or photoinitiated chemical vapor deposition (piCVD) in conjunction with directed self-assembly (DSA) of block copolymers to generate high resolution patterns. A topcoat deposited by iCVD or piCVD allows for conformal, ultra-thin, uniform, pinhole-free coatings. iCVD or piCVD topcoat enables the use of a diversity of block copolymer (BCP) materials for DSA and facilitates the direct and seamless integration of the topcoats for a pattern transfer process.
    Type: Application
    Filed: August 24, 2017
    Publication date: May 3, 2018
    Inventors: Do Han Kim, Hyo Seon Suh, Priya Moni, Karen K. Gleason, Paul Franklin Nealey
  • Publication number: 20140065379
    Abstract: Provided are novel methods of fabricating block copolymer thin film structures that allow control over both the lateral structure and vertical orientation of the thin films. In some embodiments, the methods involve directing the assembly of a block copolymer thin film between a chemically patterned surface and a second surface such that the thin film includes domains that are oriented perpendicularly through the thickness of the thin film. In certain embodiments, the second surface can be preferential at least one block of the block copolymer. In certain embodiments, the second surface can be a homopolymer. Also provided are thin film block copolymer structures having perpendicular orientations through the thickness of the thin films. The methods and structures may include block copolymers having large interaction parameters (?'s) and small domain sizes.
    Type: Application
    Filed: August 31, 2012
    Publication date: March 6, 2014
    Applicant: WISCONSIN ALUMNI RESEARCH FOUNDATION
    Inventors: Paul Franklin Nealey, Hyo Seon Suh, Jeong In Lee